基于图像活动性的序列图像分形编码方法

介绍了分形的概念以及分形压缩的主要思想;阐述了传统的分形图像压缩编码的基本原理与实现方法;提出了一种基于图像活动性序列图像分形编码方法。该方法首先由相邻帧之间的预测差值来判断当前编码块的活动性,然后根据图像的活动性,对不同特性的块采用不同的分形编码策略,最后对编码后得到的迭代函数系统（IFS）码进行可变长度编码（VLC）,以获得更高的压缩比。     

一种基于显示不相关检验的快速分形图像编码方法

针对分形编码计算量过大的缺点,本文提出一种基于显著不相关检验的分形编码方法,对于文中的测试图像,其编码速度比基于子块分发形编码方法快２－１５倍,而解码图像质量ＰＳＮＲ）没有明显下降,压缩比还有一定的提高。     

基于区域分割的分形图像压缩编码方法

在基于块分割的分形图像压缩编码研究基础上，提出了一种基于区域分割和十字搜索模型的分形图像压缩编码新方法，实验结果表明，该方法与基于块分割的分形图像压缩编码方法相比，在保持恢复图像质量的前提下，压缩比和编码速度都有了显著的提高，是一种有效的分形图像压缩编码方法。     

基于Krawtchouk矩不变量和核模糊聚类的快速分形编码

针对基于分类的快速分形编码方法存在着编码速度与解码质量间的矛盾,鉴于Krawtchouk矩不变量具有在仿射变换下保持不变的特性和核模糊聚类在处理非线性问题上的突出优势,本文首次将这两者引入到分形编码中,提出了基于Krawtchouk矩不变量和核模糊聚类的自适应分类快速分形编码方法。首先根据Domain块的方差将其粗分类,再根据Domain块的Krawtchouk矩不变量利用核模糊聚类对Domain块细分类。实验结果表明,与其他基于分类的快速分形编码方法相比,在解码图像质量提高的同时,大大加快了分形编码的速度。     

一种混合的四叉树分形图像编码

为克服四叉树分形编码中纹理信息丰富的图像块较难找到满足要求相似块的不足,在四叉树分形图像编码的基础上,提出了一种与BTC方法结合的混合分形编码方法。讨论了四叉树分形编码与BTC方法,综合了2种方法的优点,对四叉树分形编码中块尺寸为4×4且找不到满足要求相似块的图像块,采用BTC方法,并用标准图像进行仿真实验,给出了四叉树编码方法与本文方法的实验结果。实验结果表明:此方法能明显改善重构图像的MSE或PSNR指标。     

基于分形理论的图象编码改进算法

基于分形理论的图象编码算法可以获得比经典图象编码算法高得多的压缩比，是很有潜力的一种算法。基本的分形图象编码技术虽然有许多优点，但其细码时间长，匹配复杂，从实用考虑，还须从多方面进行改进以提高性能。本文给出一种自适应的改进算法，利用混合编码将块截短编码（BTC）与分形编码技术相结合，同时采用三级分决技术和块分类技术，使压缩比可在20～256之间随图象特点而取值，此算法在信噪比（PSNR）方面亦有所提高。     

基于矢量量化的层次分形编码方法

文中提出了一种新的分形图像压缩方法,该方法将矢量量化的概念应用于分形块编码中,对图像的平缓区进行矢量量化的线性组合编码,对图像的丰富细节区用分形编码,并且在分形编码时,采取了层次处理。实验表明,与基本的分形块编码方法相比,本文提出的矢量量化层次分形编码方法在保证一定的重建图像质量下,使图像的压缩比有了明显的提高,并且大大提高了编码和解码速度。     

基于小波变换的快速分形图像编码

分形图像压缩编码方法以其高压缩比的潜在性能而在近年来倍受重视,但是分形方法还存在着一些问题亟待解决。本文所提出的基于小波变换的分形压缩方法不仅弥补了分形方法编码时间过长的缺点,而且还使分形方法高压缩比的优点,得以进一步发挥。     

多波段遥感图像的快速分形编码

分形图像编码用动态迭代过程的参数来表示相应的静态图像数据,可以突破熵压缩编码的理论界限,因而得到广泛的关注.将分形图像编码应用于多波段遥感图像压缩中,根据多波段遥感图像的特点,对基于四叉树分割的快速分形编码方法进行改进,令各个波段图像共享同一四叉树分割方式,同时,利用多波段遥感图像的谱间相关性,缩小仿射变换的搜索匹配空间,以此来提高压缩比和编码速度,实验表明,本方法能显著提高基于四叉树分割的分形编码方法的性能,取得了令人满意的结果.     

分形图像编码的原理及其发展趋势

介绍了分形图像编码的原理及分形图像压缩的编码方法，提出了分形图像压缩编码的改进方法及其发展趋势。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its