富士通开发出使用单一芯片的MPEG-2编码器系统

富士通实验室和富士通公司联合开发出了一种ＭＰＥＧ－２全兼容编码器系统,可把视频、音频和系统编码器全部集成到一个芯片上。这种ＬＳＩ新系统充分利用了高性能的ＭＰＥＧ－２压缩算法,制造出实现高性能、高压缩率数字视听设备所需的关键部件。这些数字视听设备,包括有磁盘录像机和便携式摄像机等。此外,富士通公司还开发出一种使用这种新型芯片的ＭＰＥＧ编码解码器模块。ＭＰＥＧ－２数字压缩和解压技术,可大幅度降低处理数字视听数据所需的数据速率,因此,可以更有效地利用数字广播和存储容量的信道带宽。该公司开发的这种ＬＳＩ…     

日本开始开发第二代MPEG－2芯片

日本开始开发第二代ＭＰＥＧ－２芯片根据预测，目前正在开发电视机顶盒、多媒体ＰＣ和ＤＶＤ播放机的厂商将对ＭＰＥＧ－２芯片有强烈需求，因此，日本的一些公司开始了第二代ＭＰＥＧ－２芯片的开发工作。具有“处于压缩技术前沿”之誉的东芝公司，推出了用于ＤＶＤ播放...     

MPEG—2芯片及其应用

介绍了ＭＰＥＧ－２标准，芯片及其     

基于CL9100／CL9110的MPEG—2解码系统的设计

利用ＭＰＥＧ－２标准压缩的动态图象具有高清晰度和高质量的视听效果，有着广泛的应用前景。本文描述了利用Ｃ－Ｃｕｂｅ的ＣＬ９１００／ＣＬ９１１０芯片组构成的ＭＰＥＧ－２解码系统，内容包括芯片功能介绍，解码系统结构及工作原理。     

用于满足音频和视频MPEG标准的LSI芯片

本文介绍了一些满足音频和视频ＩＳＯ／ＩＥＣ ＭＰＥＧ标准的编译码芯片。这些芯片是由ＮＥＣ公司在最近二年内设计制造的。为了满足ＭＰＥＧ１视频标准的需要，ＮＥＣ公司开发了这组用于编译码器设计的芯片。这些芯片可分为三类，其中二类用于译码器的设计，另一类则用于实时ＭＰＥＧ１编码器的设计。同时还使用了一个可编程处理器以支持ＬＴＵ－ＴＨ．２６１和ＪＰＥＧ标准。为支持ＭＰＥＧ２视频标准专门开发了一组译码芯片，它     

MPEG—2和DVD技术研讨

ＭＰＥＧ－２是数字电视广播（ＤＶＢ）、ＨＤＴＶ、ＤＶＤ等的基础，文章首先叙述了ＭＰＥＧ－２的图像压缩编码，然后介绍了ＭＰＥＧ－２的数据结构，对ＭＰＥＧ－１和ＭＰＥＧ－２进行了比较。并对ＤＶＤ标准和ＤＶＤ的技术要点作了全面介绍。     

MPEG音频概述：当前和将来的低码率音频编码标准（上）

自从１９８８年以来，ＭＰＥＧ一直从事着高质量低码率音频编码的标准化工作。在１９９２年和１９９４年，完成了ＭＰＥＧ－１和ＭＰＥＧ－２音频标准。ＭＰＥＧ的当工作包括立体声或多通道声音材料的ＭＰＥＧ－２先进音频编码以及ＭＰＥＧ－４的音频部分。     

MPEG—2标准及其特点

当前信息科学技术领域正经历着划时代的变革，其中ＭＰＥＧ－２压缩标准起着至关重要的作用，本文叙述了ＭＰＥＧ标准的三大特点，简要介绍了ＭＰＥＧ－２标准的制定情况，并对ＭＰＥＧ－２相对于ＭＰＥＧ－１的一些主要特点：高画质，可变速率，可分级性，复用灵活性，视频可调性及适应场／帧处理进行了详细的介绍，分析和比较。     

MPEG-2芯片及其应用

介绍了ＭＰＥＧ－２标准、芯片及其应用     

MPEG—2简介

ＭＰＥＧ－２是用于传输的声音及图象的压缩标准。本文介绍了ＭＰＥＧ－２系统、ＭＰＥＧ－２图象编码、ＭＰＥＧ－２声音编码等标准。     

Interfacial reaction and shear strength of SnAgCu-xNi/Ni solder joints during aging at 150 °C

The interfacial microstructure and shear strength of Sn3.8Ag0.7Cu-xNi (SAC-xNi, x = 0.5, 1, and 2) composite solders on Ni/Au finished Cu pads were investigated in detail after aging at 150 °C for up to 1000 h. The interfacial characteristics of composite solder joints were affected significantly by the weight percentages of added Ni micro-particles and aging time. After aging for 200 h, the solder joints of SAC, SAC-0.5Ni and -1Ni presented duplex intermetallic compound (IMC) layers regardless of the initial interfacial structure on as-reflowed joints, whose upper and lower IMC layers were comprised of (CuNi)₆Sn₅ and (NiCu)₃Sn₄, respectively. Only a single (NiCu)₃Sn₄ IMC layer was ever observed at the SAC-2Ni/Ni interface on whole aging process. Based on the compositional analysis, the amount of Ni within the IMC regions increased as the proportion of Ni addition increased. The IMC (NiCu)₃Sn₄ layer thickness on the interface of SAC and SAC-0.5Ni grew more slowly when compared to that of SAC-1Ni and -2Ni, while for the (CuNi)₆Sn₅ layer the reverse is true. Except the IMCs sizes are increased with increased aging time, the interfacial IMCs tended to transfer their morphologies to polyhedra. In all composite joints testing, the shear strengths were approximately equal to non-composite joints. The fracturing observed during shear testing of composite joints occurred in the bulk solder, indicating that the SAC-xNi/Ni solder joints had a desirable joint reliability.     

有机发光二极管中ADN掺杂ErQ的1.54μm电致发光

自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen:Cs2CO3/Sm/Au),设计并比较了三套不同发射层结构(ErQ/ADN为双层结构器件,(ErQ/ADN)×3为多层结构器件,ErQ:ADN为掺杂结构器件)的器件.三组器件在一定的偏压下,均可发出1.54μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN:ErQ(1∶1)掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN:ErQ复合膜做了以下表征:吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移.     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

聚对苯撑苯并双(口恶)唑发光及其器件制备

采用光谱技术,研究了聚对苯撑苯并双(口恶)唑(PBO)溶液的光敏发光特性,并用相对法估算出溶液发光效率在50%范围.结合光谱技术、半导体电学和电化学等研究手段,具体研究了以PBO为发光层的单层电致发光器件,研究结果显示,电致发光与薄膜的光致发光有具有相同的发光中心,峰值位于510 nm左右.同时发现,由于存制备过程中不同处理条件使得不同厚度薄膜残留的掺杂物质浓度不同,从而引起薄膜的导电性的不同.使得器件的阈值场强随PBO厚度的减小而逐渐增加.     

钠离子对poly(dT).poly(dA).poly(dT)三螺旋DNA分子呼吸模式的影响

利用分子结构的螺旋对称性,建立了一个包括钠离子的三链DNA分子poly(dT)*poly(dA)*poly(dT)的晶格动力学模型,计算了poly(dT)*poly(dA)*poly(dT)的氢键呼吸模式.结果发现钠离子的加入明显地淬灭了位于较低频率的几个最为强烈的Hoogensteen氢键呼吸模式,而对Watson-Crick氢键呼吸模式影响不明显,这说明钠离子能提高poly(dT)*poly(dA)*poly(dT)三螺旋结构的稳定性.该计算结果很好地解释了poly(dT)*poly(dA)*poly(dT)的热融化实验.     

人小肠粘膜免疫酶的定位研究—光镜和电镜免疫组织化学染色法

本文对免疫酶组织化学的样品制备程序和染色方法做了详细的阐述。用直接法、间接法和ABC法,对人小肠免疫酶的定位,进行了光镜和电镜的观察,染色阳性反应显著,获得了满意的效果。并对染色技巧做了分析和探讨。     

BNBST无铅压电陶瓷的制备工艺研究

设计了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3（BNBST[100x-100a／100b]）无铅压电陶瓷新体系。该体系压电陶瓷具有工艺特性及压电响应好，压电常数高的特点，且有实际应用前景的新型压电陶瓷材料体系。采用传统的陶瓷工艺制备了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3无铅压电陶瓷，研究了制备工艺参数对其物化结构性能的影响。生料的热重-差热（TGA-DTA）分析表明，粉料合成过程中，先是SrTiO3、BaTiO3的形成，然后是（Bi0．5Na0．5）Tio，的形成，同时三者形成固溶体；密度测试表明，陶瓷的体积密度随烧结温度的升高而增大，可较易获得理论密度94％的陶瓷；X-射线能谱分析（EDAX）研究表明，陶瓷的Bi、Na的挥发随着烧结温度的升高而加剧。研究结果表明，要制备性能优良的无铅压电陶瓷，需要精确控制制备工艺。     

Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calculations. It was found that both Si(211) and Si(311) had 0.68±0.08 surface As coverage. Si(211) had 0.28±0.04 Te coverage and Si(311) had 0.24±0.04 Te coverage. The Si(211) surface replaces the terrace and trench Si atoms with As for a lower surface energy, while the Si edge atoms form dimers. The Si(311) surface replaces all terrace atoms and adsorbs an As dimer every other edge site. These configurations imply an improvement in the mean migration path from the bare silicon surface by allowing the impinging atoms for the next epitaxial layer, tellurium (Te), to bind at every other pair of edge atoms, and not the step terrace sites. This would ensure a nonpolar, B-face growth.     

Joint estimation of TOA and DOA in IR-UWB system using a successive propagator method

Impulse radio ultra-wideband (IR-UWB) ranging and positioning require accurate estimation of time-of-arrival (TOA) and direction-of-arrival (DOA). With receiver of two antennas, both of the TOA and DOA parameters can be estimated via two-dimensional (2D) propagator method (PM), in which the 2D spectral peak searching, however, renders much higher computational complexity. This paper proposes a successive PM algorithm for joint TOA and DOA estimation in IR-UWB system to avoid 2D spectral peak searching. The proposed algorithm firstly gets the initial TOA estimates in the two antennas from the propagation matrix, then utilises successively one-dimensional (1D) local searches to achieve the estimation of TOAs in the two antennas, and finally obtains the DOA estimates via the difference in the TOAs between the two antennas. The proposed algorithm, which only requires 1D local searches, can avoid the high computational cost in 2D-PM algorithm. Furthermore, the proposed algorithm can obtain automatically paired parameters and has better joint TOA and DOA estimation performance than conventional PM algorithm, estimation of signal parameters via rotational invariance techniques algorithm and matrix pencil algorithm. Meanwhile, it has very close parameter estimation to that of 2D-PM algorithm. We have also derived the mean square error of TOA and DOA estimation of the proposed algorithm and the Cramer-Rao bound of TOA and DOA estimation in this paper. The simulation results verify the usefulness of the proposed algorithm.     

系统级封装新型埋入式电源滤波结构的研究

在高密度小尺寸的系统级封装(SiP)中,对供电系统的完整性要求越来越高,多芯片共用一个电源网路所产生的电压抖动除了会影响到芯片的正常工作,还会通过供电网路干扰到临近电路和其他敏感电路,导致芯片误动作,以及信号完整性和其他电磁干扰问题.这种电压抖动所占频带相当宽,几百MHz到几个GHz的中频电源噪声普通方法很难去除.结合埋入式电容和电源分割方法的特点,提出一种新型高性能埋入式电源低通滤波结构直接替代电源/地平面.研究表明,在0.65～4GHz的频带内隔离深度可达-40～75 dB,电源阻抗均在0.25ohm以下,实现了宽频高隔离度的高性能滤波作用.分别用电磁场和广义传输线两种仿真器模拟,高频等效电路模型分析这种低通滤波器的工作原理以及结构对隔离性能的影响,并进行了实验验证.