万法级MnO_2/C超级电容器的组装及性能研究

采用固相法制备了MnO2,并对其结构进行表征。以所制备的MnO2作为电极活性物质,组装成超级电容器,对其电化学性质进行研究,结果表明,所组装超级电容器的等效串联电阻为1.875m?,功率密度为192W/kg,能量密度为2.306W·h/kg,电容器的充电电容为11671.4F,放电电容为11534.3F,充放电效率为98.8%,经多次循环后电容器性能良好。     

IOA备份电源控制器lC

LTC3350是一款超级电容器充电器和备份控制器IC,其包括了组成一个完整、独立和基于电容器的备份电源解决方案必需具备的所有功能。其在4．5～35V输入电压范围内工作,能够提供超过10A的充电／备份电流能力。该器件还为l～4个串联超级电容器组提供平衡和过压保护。     

16V／58F iMOD：超级电容器模块

Ioxus公司推出16V／58FiMOD系列超级电容器模块16V／58FiMOD超级电容器模块，旨在提供面向可再生能源发电系统的风电机组桨距控制、启动系统、汽车子系统、备用电源／不间断电源（UPS）／不间断运行以及功率调节等应用。     

20伏高电压型碳纳米管超级电容器的研制

通过催化裂解法制备了碳纳米管并进一步制备了碳纳米管膜片式电极.基于该种材料的超级电容器电极比容量达到42F/g并表现出良好的大电流放电特性.本文采用多种研究方法对基于该种材料的双电层电容器的电化学特性进行了详细的研究.本文还开发了全新的超级电容器组装工艺,采用该工艺组装的碳纳米管超级电容器工作电压可以达到20V并具有良好的容量特性和阻抗特性.     

恒定电压、恒定电流DC／DC转换器

LT3956为作为恒定电流和恒定电压稳压器工作而设计,非常适用于驱动大电流LED以及给电池和超级电容器充电。性能特点：3000：1 True Color PWM调光;输入电压为4．5～80V;输出电压高达80V;内部3．3A／84V开关;恒定电流和恒定电压调节;250mV高压侧电流检测;     

超级电容器用竹炭的制备及其电容性能

以竹材为原料,在高温Ar保护下制备了高比表面积超级电容器用竹炭材料。用XRD和SEM对所制竹炭进行了物相分析和形貌观察;用循环伏安、恒电流充放电和交流阻抗谱研究了炭化温度对所制超级电容器性能的影响。结果表明:所得竹炭为无定形结构,随着炭化温度的升高,竹炭中石墨微晶向有序态结构发展。炭化温度为500℃时,制备的竹炭电性能最佳。在125mA/g电流密度下的首次放电比电容为226F/g;即使在500mA/g的大电流密度下,其放电比电容仍高达184F/g,第1000次循环时其放电比电容为138F/g,每次循环电容衰减仅为0.046F/g。     

机电组件

0632097油浸式变压器在线监测与保护装置[刊,中]／马少华／／沈阳工业大学学报．-2006,28(4)．-426-429(C) 0632098车用超级电容器应用设计[刊,中]／张臣／／电源技术．-2006,30(9)．-740-743(D)文章探讨了几个在设计过程中需要注意的参数．然后举例说明了在不同情况下超级电容的设计方法。通过这些设计示例,能够充分了解超级电容使用的场合及其特点。参5 0632099脉冲电沆注入法求多芯电缆的传输函数[刊,中]／周启明／／信息与电子工程．-2006,4(4)．-254-257(L)在缆线的高空磁脉冲HEMP耦合试验研究中,为得到电流注入法与辐射法之间不同波形皮电流的耦合等效关系．将电流注入法时域测量与理论分析相结合,以九芯电缆为例通过芯电压与皮电流的关系求取多芯电缆传输函数。Matlab计算结果表明,通过脉冲电流     

电容器

0622723 NiO/AC非对称超级电容器的研究[刊,中]/庄凯//西华大学学报(自然科学版)．—2006,26(1)．—6-7,13 (G)通过热处理球形Ni(OH)_2得到NiO粉末,将其作为正极与活性炭(AC)负极组装成非对称超级电容器,用恒流充放电测试分析了超级电容器的电容特性。讨论了正负极活性物质比例、充放电电流和热处理时间对超级电容器比电容量、内阻的影响。结果表明：正负极活性物质比为1：3,工作电流密度为200mA/g,当Ni (OH)_2的热处理时间为2h,充电电压为1．3V时,超级电容器的双电极比电容量可达7．15F/g。参9 0622724一种新颖的串联超级电容器组的电压均衡方法[刊,     

能平衡串联电容电荷的存储器终结IC

作为目前最有趣的元件家族之一，高值电容器提供的额定范围是十分之几法拉至数十法拉．但是工作电压较低。例如．Maxwell公司的PC10超级电容器占用的面积大约相当于一枚大尺寸邮票．厚度相当于四枚堆叠在一起的25美分硬币。PC10提供10法拉电容、2．5A最大放电电流额定值、18ESR（等效串联电阻）。但是．它的额定工作电压仅为2．5V。     

不同电解质对LiNi1/3Co1/3Mn1/3O2/AC超级电容器性能的影响

在以LiNi1/3Co1/3Mn1/3O2为正极,活性炭(AC)为负极的混合型锂离子超级电容器体系中,研究以LiBF4和Et4NBF4的不同配比混合为溶质的乙腈(Acetonitrile,AN)电解液对超级电容器性能的影响。结果表明,随着电解液中Et4NBF4与LiBF4的比值的增大,LiNi1/3Co1/3Mn1/3O2/AC体系超级电容器的线性放电区间逐渐变窄,循环性能逐渐变差。其中采用1 mol/L的LiBF4/AN为电解液的超级电容器的综合性能较好,其线性放电区间为0~2.7 V,倍率性能也较好,最大比功率达到23 600 W/kg,经3 000次循环后容量保持率为93.2%。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its