A direct discrete complex image method from the closed-form Green's functions in multilayered media

Sommerfeld integration is introduced to calculate the spatial-domain Green's functions (GF) for the method of moments in multilayered media. To avoid time-consuming numerical integration, the discrete complex image method (DCIM) was introduced by approximating the spectral-domain GF by a sum of exponentials. However, traditional DCIM is not accurate in the far- and/or near-field region. Quasi-static and surface-wave terms need to be extracted before the approximation and it is complicated to extract the surface-wave terms. In this paper, some features of the matrix pencil method (MPM) are clarified. A new direct DCIM without any quasi-static and surface-wave extraction is introduced. Instead of avoiding large variations of the spectral kernel, we introduce a novel path to include more variation before we apply the MPM. The spatial-domain GF obtained by the new DCIM is accurate both in the near- and far-field regions. The CPU time used to perform the new DCIM is less than 1 s for computing the fields with a horizontal source-field separation from 1.6/spl times/10/sup -4//spl lambda/ to 16/spl lambda/. The new DCIM can be even accurate up to 160/spl lambda/ provided the variation of the spectral kernel is large enough and we have accounted for a sufficient number of complex images.     

Single- and alternating-polarization 170-gb/s transmission up to 4000 km using dispersion-managed fiber and all-Raman amplification

We demonstrate transmission of 170-Gb/s single- and alternating-polarization return-to-zero differential phase-shift keying signals in a recirculating loop using dispersion-managed fiber spans and all-Raman amplification. In the single polarization case, bit-error-ratio (BER) values of 5/spl times/10/sup -9/ and 1.6/spl times/10/sup -4/ were obtained after 960 and 2880 km, respectively. In the alternating polarization case, significantly larger transmission distances were achieved, with BER values of 2/spl times/10/sup -9/ after 1920 km and 5/spl times/10/sup -5/ after 4320 km, respectively.     

UV-induced index changes in Undoped Fluoride glass

Undoped fluoride glass slides have been exposed to pulsed 193-nm ultraviolet (UV) irradiation. Their absorption changes have been measured to evaluate UV-induced index changes using Kramers-Kronig relation. A layer-peeling polishing technique was applied to characterize the local UV-induced index change of highly absorbing glass. Index changes up to 1.75/spl times/10/sup -4/ have been evaluated with this method in fluorozirco-aluminate glass. Fluoroaluminate and fluorozirconate glass showed only small index changes of about 2.0/spl times/10/sup -6/ and 2.6/spl times/10/sup -6/ at a wavelength of 1550 nm.     

Spatial-variability-based algorithms for scaling-up spatial data and uncertainties

When using remote sensing and geographic information systems, accurately scaling- up spatial data of a variable and their uncertainties from a finer to a coarser spatial resolution is widely required in mapping and managing natural resources and ecological and environmental systems. In this study, four up-scaling methods were derived based on simple and ordinary cokriging estimators and a sequential Gaussian cosimulation algorithm for points and blocks. Taking spatial variability of variables into account in the up-scaling process made it possible to simultaneously and accurately obtain estimates and estimation variances of larger blocks from sample and image data of smaller supports. With the aid of Thematic Mapper imagery, these methods were compared in a case study where overall vegetation and tree covers were scaled up from a spatial resolution of 30/spl times/30 m/sup 2/ to 90/spl times/90 m/sup 2/ with a stratification method at 90/spl times/90 m/sup 2/. The results showed that the methods Point simple coKriging/spl I.bar/Point co-Simulation scaling UP (PsK/spl I.bar/PSUP) and PsK/spl I.bar/Block co-Simulation (PsK/spl I.bar/BS) led to smaller errors and better reproduced spatial distribution and variability of the variables than the other methods. Choosing PsK/spl I.bar/PSUP or PsK/spl I.bar/BS depends on the users' emphasis on accuracy of estimates and variances, computational time, etc. The methods can be applied to multiple continuous variables that have any distribution. It is also expected that the general idea behind the methods can be expanded to scaling-up spatial data for categorical variables.     

High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

InGaN-GaN multiquantum well (MQW) p-n junction photodiodes with semi-transparent Ni-Au electrodes were fabricated and characterized. It was found that the fabricated InGaN-GaN p-n junction photodiodes exhibit a 20-V breakdown voltage and a photocurrent to dark current contrast ratio of /spl sim/10/sup 5/ when a 0.4-V reverse bias was applied. The peak responsivity at 380 nm was 1.28 and 1.76 A/W with a 0.1- and 3-V applied reverse bias, respectively. Furthermore, an internal gain was found from our InGaN-GaN MQW p-n junction photodiodes possibly due to the long-lifetime of GaN based materials. Also, it was found that the low frequency noise of our photodiodes was dominated by the 1/f type noise. For a given bandwidth of 500 Hz, the corresponding noise equivalent power and normalized detectivity D/sup */ were found to be 6.34/spl times/10/sup -13/ W and 4.45/spl times/10/sup 11/ cm/spl middot/Hz/sup 0.5/ W/sup -1/, respectively.     

A new wind vector algorithm for C-band SAR

Ocean wind speed and wind direction are estimated simultaneously using the normalized radar cross sections /spl sigma//sup 0/ corresponding to two neighboring (25-km) blocks, within a given synthetic aperture radar (SAR) image, having slightly different incidence angles. This method is motivated by the methodology used for scatterometer data. The wind direction ambiguity is removed by using the direction closest to that given by a buoy or some other source of information. We demonstrate this method with 11 ENVISAT Advanced SAR sensor images of the Gulf of Mexico and coastal waters of the North Atlantic. Estimated wind vectors are compared with wind measurements from buoys and scatterometer data. We show that this method can surpass other methods in some cases, even those with insufficient visible wind-induced streaks in the SAR images, to extract wind vectors.     

Retrieval, validation, and application of the 1-km aerosol optical depth from MODIS measurements over Hong Kong

The Moderate Resolution Imaging Spectroradiometer (MODIS) aerosol retrieval algorithm was developed to derive aerosol properties at a global scale, suitable for climate studies. Under favorable conditions (clear sky and over dark surfaces), the standard 10/spl times/10 km MODIS aerosol products are also useful on regional scales to monitor aerosol distributions and transports. However, the 10-km resolution is insufficient to depict aerosol variation on local or urban scales, due to inherent aerosol variability as well as complex surface terrain. In this study, we have modified the MODIS algorithm to retrieve aerosol optical depth (AOD) at 1-km resolution over Hong Kong, a city of just over 1000 km/sup 2/ with very complex surface features. Accompanied by the increased spatial resolution are new aerosol models derived with single-scattering albedo (SSA) around 0.91-0.94 to accommodate higher aerosol absorption encountered in Hong Kong than that was presumed for MODIS standard products (SSA/spl sim/0.97) over the region. The derived AOD data are compared to handheld Microtops II sunphotometer observations at the Hong Kong University of Science and Technology and other locations across Hong Kong. Retrieval errors within 15% to 20% of sunphotometer measurements are found. Moreover, when compared with the standard 10-km AOD products, the 1-km AOD data are much better correlated with PM/sub 10/ measurements across Hong Kong, suggesting that the new 1-km AOD data can be used to better characterize the particulate matter distribution for cities like Hong Kong than the MODIS standard products.     

Germania-based core optical fibers

Germania-glass-based core silica glass cladding single-mode fibers (/spl Delta/n up to 0.143) with a minimum loss of 20 dB/km at 1.9 /spl mu/m were fabricated by the modified chemical vapor deposition (MCVD) method. The fibers exhibit strong photorefractivity with the type-IIa-induced refractive-index modulation of 2/spl times/10/sup -3/. The Raman gain of 300 to 59 dB/(km/spl middot/W) was determined at 1.07 to 1.6 /spl mu/m, respectively, in a 75 mol.% GeO/sub 2/ core fiber. Only 3 m of such fibers are enough for the creation of a 10-W Raman laser at 1.12 /spl mu/m with a 13-W pump at 1.07 /spl mu/m. Raman generation in optical fiber at a wavelength of 2.2 /spl mu/m was obtained for the first time.     

GaN MSM UV photodetectors with titanium tungsten transparent electrodes

GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with titanium tungsten (TiW) transparent electrodes were fabricated and characterized. It was found that the 10-nm-thick TiW film deposited with a 300-W RF power can still provide a reasonably high transmittance of 75.1% at 300 nm, a low resistivity of 1.7/spl times/10/sup -3/ /spl Omega//spl middot/cm and an effective Schottky barrier height of 0.773 eV on u-GaN. We also achieved a peak responsivity of 0.192 A/W and a quantum efficiency of 66.4% from the GaN ultraviolet MSM photodetector with TiW electrodes. With a 3-V applied bias, it was found that minimum noise equivalent power and maximum D/sup */ of our detector were 1.987/spl times/10/sup -10/ W and 6.365/spl times/10/sup 9/ cmHz/sup 0.5/W/sup -1/, respectively.     

A resonant tunneling quantum-dot infrared photodetector

A novel device-resonant tunneling quantum-dot infrared photodetector-has been investigated theoretically and experimentally. In this device, the transport of dark current and photocurrent are separated by the incorporation of a double barrier resonant tunnel heterostructure with each quantum-dot layer of the device. The devices with In/sub 0.4/Ga/sub 0.6/As-GaAs quantum dots are grown by molecular beam epitaxy. We have characterized devices designed for /spl sim/6 /spl mu/m response, and the devices also exhibit a strong photoresponse peak at /spl sim/17 /spl mu/m at 300 K due to transitions from the dot excited states. The dark currents in the tunnel devices are almost two orders of magnitude smaller than those in conventional devices. Measured values of J/sub dark/ are 1.6/spl times/10/sup -8/ A/cm/sup 2/ at 80 K and 1.55 A/cm/sup 2/ at 300 K for 1-V applied bias. Measured values of peak responsivity and specific detectivity D/sup */ are 0.063 A/W and 2.4/spl times/10/sup 10/ cm/spl middot/Hz/sup 1/2//W, respectively, under a bias of 2 V, at 80 K for the 6-/spl mu/m response. For the 17-/spl mu/m response, the measured values of peak responsivity and detectivity at 300 K are 0.032 A/W and 8.6/spl times/10/sup 6/ cm/spl middot/Hz/sup 1/2//W under 1 V bias.     

Full characterization of packaged Er-Yb-codoped phosphate glass waveguides

We present a procedure for the characterization of packaged Er-Yb-codoped phosphate glass waveguides. The procedure is based on precise measurements of the output optical powers when the waveguide is diode-laser pumped at 980 nm. The dependence of these optical powers on the input pump power is then fitted to the results from a numerical model that describes in detail the propagation of the optical powers inside the waveguide. The best fit is obtained for the following parameters: the signal wavelength scattering losses are /spl alpha/(1534)=8.3/spl times/10/sup -2/ dB/cm, the Yb/sup 3+/ absorption and emission cross sections (/spl ap/980 nm) are 5.4/spl times/10/sup -25/ m/sup 2/ and 7.0/spl times/10/sup -25/ m/sup 2/, the Er/sup 3+/ absorption and emission cross sections (/spl ap/980 nm) are 1.6/spl times/10/sup -25/ m/sup 2/ and 1.2/spl times/10/sup -25/ m/sup 2/, the Yb/sup 3+/--Er/sup 3+/ energy-transfer coefficient is 1.8/spl times/10/sup -23/ m/sup 3//s and the cooperative-upconversion coefficient is 8/spl times/10/sup -25/ m/sup 3//s. An approximate method is introduced that allows the determination of the absorption and emission cross section distributions for the erbium /sup 4/I/sub 13/2//spl hArr//sup 4/I/sub 15/2/ transition from the amplified spontaneous emission power spectrum.     

AlGaAsSb-InGaAsSb HPTs with high optical gain and wide dynamic range

Novel heterojunction phototransistors based on AlGaAsSb-InGaAsSb material systems are fabricated and their characteristics are demonstrated. Responsivity of a phototransistor is measured with applied bias voltage at four different wavelengths. The maximum responsivity around 1400 A/W and minimum noise equivalent power of 1.83/spl times/10/sup -14/ W/Hz/sup 1/2/ from this phototransistor with bias of 4.0 V at a wavelength of 2.05 /spl mu/m were measured at 20/spl deg/C and -20/spl deg/C, respectively. Noise equivalent power of the phototransistor is considerably lower compared with commercially available InGaAs p-i-n photodiodes. Collector current measurements with applied incident power are performed for two phototransistors. Currents of 400 nA at low intensity of 0.425 /spl mu/W/cm/sup 2/ and of 30 mA at high intensity of 100 mW/cm/sup 2/ are determined. Collector current increases nearly by five orders of magnitude between these two input intensities. High and constant optical gain of 500 in the 0.46-nW to 40-/spl mu/W input power range is achieved, which demonstrates high dynamic range for such devices at these power levels.     

Confinement loss and nonlinearity analysis of air-guiding modified honeycomb photonic bandgap fibers

Air-guiding photonic bandgap fibers based on a modified honeycomb lattice have been numerically investigated through the finite element method. Results confirm that an extra hole in the unit cell of a honeycomb lattice can be exploited to enlarge the photonic bandgap, allowing air-guiding with confinement losses lower than 0.1 dB/km and nonlinear coefficient lower than 3.5/spl middot/10/sup -3/(W/spl middot/km)/sup -1/ at 1.55 /spl mu/m.     

4H-SiC UV photo detectors with large area and very high specific detectivity

Pt/4H-SiC Schottky photodiodes have been fabricated with the device areas up to 1 cm/sup 2/. The I-V characteristics and photoresponse spectra have been measured and analyzed. For a 5 mm/spl times/5 mm area device leakage current lower than 10/sup -15/ A at zero bias and 1.2/spl times/10/sup -14/ A at -1 V have been established. The quantum efficiency is over 30% from 240 to 320 nm. The specific detectivity, D/sup */, has been calculated from the directly measured leakage current and quantum efficiency are shown to be higher than 10/sup 15/ cmHz/sup 1/2//W from 210 to 350 nm with a peak D/sup */ of 3.6/spl times/10/sup 15/ cmHz/sup 1/2//W at 300 nm.     

A dependency of quantum efficiency of silicon CMOS n/sup +/pp/sup +/ LEDs on current density

A dependency of quantum efficiency of nn/sup +/pp/sup +/ silicon complementary metal-oxide-semiconductor integrated light-emitting devices on the current density through the active device areas is demonstrated. It was observed that an increase in current density from 1.6/spl times/10/sup +2/ to 2.2/spl times/10/sup +4/ A/spl middot/cm/sup -2/ through the active regions of silicon n/sup +/pp/sup +/ light-emitting diodes results in an increase in the external quantum efficiency from 1.6/spl times/10/sup -7/ to 5.8/spl times/10/sup -6/ (approximately two orders of magnitude). The light intensity correspondingly increase from 10/sup -6/ to 10/sup -1/ W/spl middot/cm/sup -2//spl middot/mA (approximately five orders of magnitude). In our study, the highest efficiency device operate in the p-n junction reverse bias avalanche mode and utilize current density increase by means of vertical and lateral electrical field confinement at a wedge-shaped n/sup +/ tip placed in a region of lower doping density and opposite highly conductive p/sup +/ regions.     

Performance of polysilicon gate HfO/sub 2/ MOSFETs on [100] and [111] silicon substrates

Mobility dependence on Si substrate orientations was investigated for HfO/sub 2/ MOSFETs for the first time. High-temperature (600 /spl deg/C) forming gas (FG) annealing (HT-FGA) was applied on the devices on both [100] and [111] substrates to evaluate the mobility for optimal interfacial quality. Using HT-FGA, D/sub it/ of the [111] devices was reduced down below 1 /spl times/ 10/sup 12/ cm/sup -2/V/sup -1/. Similar to SiO/sub 2/ devices, NMOS mobility of the [111] devices was lower than that of the [100] devices at higher effective fields, while it was reversed for PMOSFETs.     

Nitride-based p-i-n bandpass photodetectors

Nitride-based p-i-n bandpass photodetectors with semitransparent Ni-Au electrodes were successfully fabricated and characterized. The photodetectors exhibit a 20-V breakdown voltage and a small dark current of 40 pA at 4-V reverse bias. It was found that spectral responsivity shows a narrow bandpass characteristics from 337 to 365 nm. Moreover, the peak responsivity was estimated to be 0.13 A/W at 354 nm, corresponding to a quantum efficiency of 44%. The relatively high response at shorter wavelength is due to the unoptimized thickness of p-Al/sub 0.1/Ga/sub 0.9/N absorption layer. At low frequency, the noise of the photodetector is dominant by the 1/f-type noise. For our 330/spl times/330 /spl mu/m/sup 2/ device, given a bias of -3.18 V, the corresponding noise equivalent power and normalized detectivity D/sup */ are calculated to be 5.6/spl times/10/sup -12/ W and 3.34/spl times/10/sup 11/ cmHz/sup 0.5/ W/sup -1/, respectively.     

Low-resistance ultrashallow extension formed by optimized flash lamp annealing

Flash lamp annealing (FLA) technology is proposed as a new method of activating implanted impurities. By optimizing FLA and implantation conditions, junction depth (Xj) at the concentration of 1 /spl times/ 10/sup 18/ cm/sup -3/ and the sheet resistance of 13 nm and 700 /spl Omega//sq for As and 14 nm and 770 /spl Omega//sq for BF/sub 2/ with junction leakage lower than 1 /spl times/ 10/sup -16/ A//spl mu/m/sup 2/ at 1.5 V were successfully obtained without wafer slip and warpage problems.     

Self-phase modulation coefficient of multiple-quantum-well optical amplifiers

The self-phase modulation coefficient /spl gamma/ of 1310 nm multiple-quantum-well (MQW) semiconductor optical amplifiers has been investigated. It is found to vary from 16/spl times/10/sup 4/ W/sup -1/ m/sup -1/ for low driving conditions to 3/spl times/10/sup 4/ W/sup -1/ m/sup -1/ for high-driving conditions. This implies that the amount of self-phase modulation occurring in the amplifier is between 1.5-10/spl times/ more than that occurring in the optical fiber following the amplifier. The additional self-phase modulation caused by the semiconductor optical amplifier may be used to achieve compensation for fiber dispersion in optical communication systems at significantly lower average power levels. The linewidth enhancement factor /spl alpha//sub H/ was found to increase from a value of 2 at low driving conditions, in agreement with results reported for MQW lasers, to a value of 3 at high-driving conditions.     

High mobility NMOSFET structure with high-/spl kappa/ dielectric

High-/spl kappa/ NMOSFET structures designed for enhancement mode operation have been fabricated with mobilities exceeding 6000 cm/sup 2//Vs. The NMOSFET structures which have been grown by molecular beam epitaxy on 3-in semi-insulating GaAs substrate comprise a 10 nm strained InGaAs channel layer and a high-/spl kappa/ dielectric layer (/spl kappa//spl cong/20). Electron mobilities of >6000 and 3822 cm/sup 2//Vs have been measured for sheet carrier concentrations n/sub s/ of 2-3/spl times/10/sup 12/ and /spl cong/5.85/spl times/10/sup 12/ cm/sup -2/, respectively. Sheet resistivities as low as 280 /spl Omega//sq. have been obtained.