啁啾光纤光栅EDFA增益平坦滤波器的设计与制作

采用啁啾相位掩膜板和程控扫描曝光技术,在经过载氢增敏处理的普通单模光纤上制作出可以用于掺铒光纤放大器(EDFA)增益谱平坦化的啁啾光纤布喇格光栅(CFBG)型增益平坦滤波器(GFF),运用数值解析的方法得到曝光量曲线,并将之分解成曝光频率、曝光功率密度、光斑尺寸和光纤移动速度的曝光函数,按照曝光函数进行程控扫描曝光从而精确控制光栅的反射率.对制作的CFBG进行退火老化处理和温度补偿及保护封装,封装后GFF的温漂系数在-20～ 70 ℃内变化小于1 pm/℃,经平坦后的EDFA增益谱在30 nm带宽范围内,不平坦度＜±0.3 dB.根据不同的EDFA的ASE谱,可程控给出不同的曝光函数,以制作具有不同反射谱的CFBG型GFF.     

增益平坦型掺铒光纤放大器研究

为了解决光信号在传输过程中因信号放大引起的各信道间功率不均衡的问题,该文通过优化掺铒光纤放大器(EDFA)的结构和增加增益平坦滤波器(GFF)对信号增益谱进行平坦优化。首先通过理论分析各信道间产生不均衡增益的原因;优化掺铒光纤放大器结构由单级放大改变为两级放大,并通过光纤长度二维仿真得到最佳长度配比;并在两级放大光路间添加增益平坦滤波器滤除一级放大产生的不平坦度,再经过二次放大输出增益光信号。最后通过实验给出加入GFF前后增益谱对比图,得到增益更加平坦的输出光谱,保证在1 530～1 560 nm波段的增益平坦度保持在±0.32范围内。     

基于波长敏感的耦合器动态增益平坦L波段EDFA理论与实验

掺铒光纤放大器(EDFA)的增益平坦化是波分复用(WDM)系统的重要问题,文章通过理论和实验提出一种新型的增益平坦滤波器,即一种耦合比随波长变化的耦合器与偏振控制器(PC)构成光纤环形镜,调节光纤环形镜内的PC的状态,从而改变光纤环形镜的反射谱线的位置和深度,使其匹配EDFA的增益谱,实现对L波段EDFA增益平坦,实验结论得出,平坦后的光谱在1562nm~1605nm带宽内增益平坦度为±0.7d B。     

基于长周期光纤光栅的增益平坦滤波器的研制

文中主要介绍了用长周期光纤光栅(L PFG) 制作增益平坦滤波器( GFF) 时要注意的一些技术性问题,其中包括光敏光纤的选择、光纤模式的选择、写光栅的曝光强度、波长漂移量的预留。     

TDM抽运光纤拉曼放大器增益平坦的研究

讨论了分时复用(TDM)抽运光纤拉曼放大器的增益平坦特性,基于拉曼增益谱理论,建立了光纤拉曼放大器的开关增益与光纤特性的关系表达式.通过数值模拟发现,信号增益平坦随抽运功率组合的不同有规律地起伏变化.通过优化抽运功率组合,实现了TDM抽运光纤拉曼放大器增益的平坦化.     

光子晶体增益平坦滤波器的设计

掺铒光纤放大器(EDFA)的增益平坦化是波分复用(WDM)系统中的重要问题.提出了用光子晶体实现增益平坦的新方案.通过分析EDFA增益平坦的原理与一维光子晶体的反射谱(在不同波长处具有不同反射率的特性),设计出了满足特定条件的增益平坦滤波器.以EDFA典型曲线为例,利用遗传算法简便精确地优化一维光子晶体的周期数,从而设计出了与EDFA增益谱相匹配的增益平坦滤波器.结果表明,级联的一维光子晶体滤波器在1530～1560 tim范围内对EDFA的增益进行平坦,且不平坦度约为±0.6 dB.     

GFF制作过程中的EF指标监测的实现

插入损耗误差函数(Error Function,EF)指标是增益平坦滤波器(Gain Flattening Filter,GFF)的关键指标,如何实时监测EF是GFF制作过程中必须解决的问题.文中介绍的EF指标实时监测系统,是通过通用接口总线(General Purpose Interface Bus,GPIB)构建的,它利用计算机编程技术从光谱分析仪中获取数据并进行分析处理,能够实时绘制带容限的GFF插入损耗曲线,监测EF指标.     

多泵浦增益平坦光子晶体拉曼光纤放大器

针对密集波分复用光纤通信系统中拉曼光纤放大器增益及增益谱平坦问题,提出一种采用4个泵浦光的多泵浦方式在光子晶体光纤不同位置处注入两种不同波长泵浦光的组合方式来获得拉曼光纤放大器增益更大、增益谱更加平坦的方法。这种组合方式在拉曼光纤放大器中使得光信号实现了前段放大、后段补偿,从而在拉曼光纤放大器输出端获得高增益和较平坦增益谱。模拟的结果表明:平均增益可达:26.5 dB,增益平坦度为0.046 dB。     

碲基掺铒光纤放大器增益均衡的数值模拟

针对宽带碲基掺铒光纤放大器(EDTFA)本征增益谱不平坦特性,研究了采用双级串连结构,并在两段光纤中间加入增益均衡滤波器来实现增益平坦.模拟结果显示,通过设计一定结构的滤波谱,在37信道同时输入的情况下,铒离子掺杂浓度为4000 ppm时,使1536～1608 nm范围带宽内的增益达到了24 dB左右,噪声指数小于5.5 dB,增益谱的不平坦度小于1 dB;铒离子掺杂浓度为6000 ppm时,使1536～1608 nm范围带宽内的增益达到了23.5 dB左右.噪声指数小于5 dB,增益谱的不平坦度小于1dB.优化后的级连EDTFA可以满足WDM系统的要求.     

双向泵浦受激拉曼散射增益谱平坦光纤放大器

研究现有的拉曼光纤放大器(Raman Fiber Amplifier,RFA)增益谱平坦化技术的不足,提出一种新型的拉曼光纤放大器的设计,即双向泵浦受激拉曼散射增益谱平坦光纤放大器。利用受激拉曼散射增益谱几乎在450cm-1波数处形成的对称结构,利用前向泵浦与信号光产生的频移对信号光进行放大作用,同时利用后向泵浦与信号光产生的频移对信号光进行补偿性的放大作用,从而实现双向泵浦受激拉曼散射增益谱平坦光纤放大器的设计。通过MATLAB的仿真验证,所设计的放大器增益平坦度高,信号光功率增益大,可实现双向泵浦受激拉曼散射光纤放大器的平坦化。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its