浅谈有线数字电视融合终端的无线网络技术及其应用

有线数字电视融合终端,主要是指基于有线双向网络和宽带IP技术,实现家庭局域网互联的终端设备．其目的是让家庭移动设备．比如智能手机、平板电脑、无线键鼠、     

HomePlug技术推动家庭互联网络发展

通过利用现有的电力线路,HomePlug技术可以让家庭中的任何一个插座变成宽带网络接入点,并使接入设备互联以及连接到云端,建立家庭高速互联网络和实现家居智能化。作为一种宽带技术,电力线通信(PLC)是一种简单易用且高效的技术,它通过普通电力线作为媒介来传输声音、资料或影像。     

下一代家庭网络G.hn实现固网和移动网络的融合

从当前家庭内的互联方式多样化、解决方案多的现实角度出发,提出基于G.hn的家庭互联新技术.该技术可以基于家庭内现有的任何管线资源来承载,同时提供更高的带宽充分满足家庭内新型业务的开展需要.详细介绍了G.hn的标准进展、功能、组网及上海贝尔阿尔卡特公司的宽带融合解决方案.     

合作宽带小区网络互联及认证技术方案研究

当前家庭宽带高速发展带来业务管控的政策风险,本文介绍了一种新的通过移动驻地网及城域网,使用铁通RADIUS认证及流量出口的家庭宽带网络互联及认证方案,测试表明该方案业务运行稳定,有效地加快推广家庭宽带业务,是值得推广的一种新的合作小区方式。     

智慧家庭综合标准化体系及认证评价研究

随着宽带技术、云计算、移动互联及智能家电等技术的快速发展,智慧家庭市场进入快速发展时期.但是我国智慧家庭存在生态体系尚未建立、产品互联互通程度不足、标准体系不完善等问题.研究适合我国智慧家庭产业发展状况的智慧家庭综合标准体系,推动智慧家庭在重点领域的认证评价,是促进我国智慧家庭产业发展的重要手段.     

智慧家庭未来5年发展趋势

Juniper Research最新公布的报告对智慧家庭做出新定义,指出了智慧家庭4大要素、4大潜力市场及2种服务模式……JuniperResearch对智慧家庭的最新定义是:一个互联通畅、能满足家里家外不同服务需求的家居系统。智慧家庭包括4大要素:宽带连接、互联设备、社区网关、运营商服务及计费模式。其中高速宽带连接是智慧家庭核心要素。智慧家庭应用在不断完善、服务在不断增强,智能照明和温控系统能节省家庭电费开支;智能厨房能为主妇提供购物清单;智能音乐播放器能把音乐传送到家里各个终端和角落。以下是智慧家庭应用实例:     

家庭网络的关键技术与业务应用

数字家庭网络关键技术数字家庭网络是计算机、数字家电和移动信息终端通过有线或无线网络无缝协作,在家庭环境中共享数字媒体内容,并提供集成的话音、数据、多媒体应用,提供自动控制与远程管理等功能,达到信息在家庭内部网络的共享及与外部公网的充分流通和共享。家庭网络并非如孤岛般独立存在,因此作为宽带网络接入在家庭内部的延伸,一个可运营、可管理的数字家庭网络解决方案的成熟应用将建立在以下关键技术的基础之上。1、家庭网络互联技术家庭网络的互联主要指家庭中物理网络的构建,目前用于家庭的组网技术非常多,有线技术包括LAN,Hom…     

宽带无线接入(WiMAX)技术应用

全球微波互联接入(WiMAX)技术不仅应用于互联网,还可应用于广播电视CATV网,宽带无线接入技术是目前较为先进的,对广播电视CATV网的移动传输起点也较高.全球微波互联接入(WiMAX)应用无线代替有线接入的宽带技术对无线电领域具有重要作用.     

电力线通信技术(PLC)在家庭网络中的应用

对电力线通信技术进行了简要介绍,并结合家庭宽带业务,对该技术与家庭宽带业务如何衔接进行了详细分析,并通过测试数据列举说明该技术完全能够满足目前家庭宽带的使用,进而说明该技术在家庭宽带网络领域有着广阔的应用前景.     

家庭宽带光纤接入技术运用和实现分析

当今,在科学技术的发展的同时,家庭的光纤接入也得到了广泛的应用,家庭光纤接入技术可以极大提高宽带信号强度,同时减少了长途对家庭宽带信号的负面影响,也可防止不同家庭间的宽带信号相互干扰,有效地保证了家庭宽带的正常使用。本文对家用宽带光纤接入技术进行了深入研究,并对技术类型和应用进行讨论,旨在为今后的国内发展和应用家庭宽带接入技术提供有益参考。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its