WGM-12864C液晶显示模块在嵌入式系统中的应用

介绍了uClinux嵌入式操作系统，并根据WGM-12864C点阵液晶显示模块的特点，论述了点阵液晶显示的编程方法，同时说明了在嵌入式操作系统中液晶显示模块的具体实现过程。     

液晶显示模块加固技术研究

本文介绍了加固型液晶显示模块的结构特点，及车载和机载液晶显示模块的性能指标和加固方向，并提出了未来液晶模块加固技术的发展方向。     

液晶显示模块MDLS16268C在校验信号源设计中的应用

详细介绍了在信号源设计中，液晶显示模块MDLS16268C与单片机的接口电路以及相关程序的设计思路，通过使用液晶显示模块，使用者可获得有关信号源的较多信息量。     

字符型液晶显示模块HD44780与单片机的接口及编程

介绍了HD44780型LCD液晶显示模块的内部结构、基本原理及其技术特性，给出了HD44780液晶显示模块分别与8051单片机的PO口和P2口进行接口的具体电路，同时给出了其编程方法和程序代码。     

采用内存接口的液晶显示模块

提出了一种采用内存接口的液晶显示模块。该模块是在现有点阵式液晶显示模块上附加一个微控制器(MCU)及相关硬件,利用内存与外部控制器进行接口,从而解决了液晶显示统一接口和显示速度的问题。     

LCM12864ZK图形液晶显示模块并行实用技术

本文以北京青云创新科技发展有限金司生产的LCM12864ZK图形液晶显示模块为例，主要介绍了LCM12864殊图形液晶显示模块的结构特征、指令系统及与51系列单片机的接口技术、编程实例。     

内藏液晶显示控制器T6963C与DSP的接口应用

点阵式液晶显示模块具有性能稳定、适合应用于便携式智能仪器仪表等特点,是一种较低价位、具有较高显示功能的显示器件。文中介绍了内藏液晶显示控制器T6963C的液晶显示模块的特点及其显示方式。在此基础上,给出了该液晶显示模块与基于DSP(数字信号处理器)TMS320LF2407A的嵌入式系统的硬件接口电路和部分C语言代码。最后,实现了该液晶显示模块在TMS320LF2407A的嵌入式系统中的液晶显示功能,成为该现场温度监控系统的重要组成部分。其程序与硬件逻辑图也可为其他DSP系统提供参考。     

液晶显示控制器SED1330与DSP的接口应用

提出了一种通过DSP控制的液晶显示设计模块进行液晶显示的方法。阐述了液晶显示控制器SED1330的性能特点，具体介绍了SED1330与DSP之间的电平转换问题，以及它们之间的硬件接口电路和软件设计思想，从而成功地解决了显示问题。     

带触屏的LCD模块TP—LCM240128T及其应用

本文详细介绍了带触屏的ＬＣＤ模块ＴＰ－ＬＣＭ２４０１２８Ｔ的特性和液晶显示控制器Ｔ６９６３Ｃ的指令系统，根据实际应用具体说明了带触屏的液晶显示模块ＴＰ－ＬＣＭ２４０１２８Ｔ与８０９８单片机的接口。     

液晶显示控制器SEDl335的应用

SEDl335控制器是由EPSON公司出品的液晶显示控制模块。本文通过介绍SEDl335控制器的原理与使用，讨论以该控制器为核心的液晶显示模块在不同硬件平台的设计及其实现。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-