一种2.45GHz频段RFID读写器天线

2.45 GHz频段是RFID常用的频段之一,针对该频段的一款读写器天线进行了详细的分析并进行了改进。借助ANSOFT HFSS 10.0计算软件对天线系统进行了仿真分析,在样本天线的基础上,通过对贴片边缘开槽,使天线在保持高增益的情况下,在更宽的频带上具有更好的稳定性,同时也减小了天线的尺寸,使天线整体性能更加完善。     

基于寄生振子的多频印刷天线

RFID技术近年来发展迅猛,但是各国使用的频段却不统一。为了增强RFID系统的兼容性,本文设计一款应用于RFID标签的3频印刷天线。采用加载寄生振子实现天线的3频工作。使用ADS仿真软件对本文所设计的天线进行了仿真研究,结果表明反射损耗小于-15dB时天线的工作带宽分别为782.5～851.1MHz,919.3～995.5MHz,2.446～2.577GHz,满足设计要求。这3个频段分别覆盖了中国划分的两个RFID频段以及国际通用的2.45GHz频段。     

采用开路线馈电结构的宽带超高频RFID标签天线

用于金属物体的标签天线一直是RFID标签天线研究的热点和难点,文章提出了一种低剖面的宽带超高频RFID标签天线,介绍了该天线的结构,对天线传输线模型进行了研究,最后对天线进行了仿真分析。该天线半功率带宽覆盖了超高频RFID系统的整个频段,隆低了制作成本。     

抗移动通信终端干扰的UHF RFID标签天线设计方法

我国的UHF RFID使用的800/900 MHz频段距离移动通信CDMA800、GSM等频段较近,易受到移动通信系统的干扰,导致RFID标签的解调误码率增加。在分析干扰形成机理的基础上,通过对UHF频段频率分布的分析,提出了抗移动通信终端干扰的UHF RFID标签天线设计方法,推导出介质基板厚度h计算公式。将该方法应用到IT设备资产进行管理的RFID标签天线设计上,仿真结果表明,RFID频段的回波损耗S11值均小于-10 dB,CDMA800、GSM等频段的回波损耗S11均大于-10 dB,RFID频段的电压驻波比VSWR值均小于2,移动通信频段的电压驻波比VSWR值均大于2,获得了良好的抗移动通信终端干扰的性能。     

一种小型UHF RFID读写器天线设计

基于RFID系统对天线的要求,提出了一种适用于UHF频段上的RFID读写器天线。该天线采用背馈馈电方法,通过在分形结构上采用非对称矩形切角来实现天线的小型化和圆极化。利用电磁仿真软件分析了天线性能,仿真与测试结果吻合良好。     

无源高频RFID系统读写器天线的设计

基于无源电感耦合RFID系统的工作模式,推导出高频段读写器近场小环形天线的磁感应强度和天线端电压的算法,提出一种天线的设计方法,并对其主要参数的选定、工作性能受工作环境的影响等问题进行了分析。工作在不同频段的RFID系统,由于工作条件的差异,其天线的等效模型和设计方法不尽相同。所提出的高频读写器天线的设计方法简便、有效,适于读些距离小于1m的应用环境,可作为工程设计的参考依据。     

一种UHF频段RFID阅读器天线的小型化设计

采用1／4波长微带贴片以缩小天线面积,利用商业软件Ansoft HFSS10．0进行设计仿真和优化,成功研制了一款可用于UHF频段（915MHz）RFID读写器的小型化微带天线。经过实际测试,天线在工作频段内性能优良,驻波比FSWR〈2时阻抗带宽达到30MHz。贴片天线的尺寸与性能完全满足手持RFID阅读器的需求。     

基于SL3IC3001芯片的UHF频段RFID多应用天线设计

设计一种基于SL31C3001芯片的UHF频段RFID无源微带贴片天线。该天线利用三维结构微带天线模型,实现了与底面无关的RFID标签;采用E型结构形式,通过一对沿着辐射边界的宽缝,实现较宽的带宽,解决了其他形式的uHF频段RFID无源天线靠近金属或者其他电介质时性能下降甚至失效的问题。通过电磁软件Ansoft HFSS仿真可知,该天线有较宽的带宽和合适的增益。实测结果表明,标签天线在不同环境下读取距离均可达到12m,具有较好的多应用性能。     

一种UHF频段弯折偶极子RFID天线的设计

针对目前射频识别(RFID)天线小型化要求,设计了一种超高频(UHF)弯折偶极子RFID标签天线。天线的构型采用了经典的电感耦合环匹配模型,结构简单且易实现阻抗匹配;在天线宽度上进行二次弯折降低长宽比例,具有小型化优势。利用HFSS仿真软件对该天线进行仿真分析,结果表明该天线具有较宽的阻抗带宽,能够覆盖920~925 MHz超高频频段,并且其回波损耗值及方向性均良好,能够满足RFID的实际生产和应用的要求。     

RFID电子车牌用树脂缝隙天线的设计

为了对车辆进行射频识别(RFID),设计一种用于有源电子车牌的弯折树脂缝隙天线,并根据车牌安装的实际情况设计了馈电结构。该天线能够将有源RFID模块与金属车牌有效一体化,而且树脂缝隙不易变形,能够加强天线的机械强度。利用HFSS软件对结构参数进行仿真优化,并分析了结构参数的变化对天线工作频带特性的影响,得到设计该天线的一般规律。仿真结果表明,该树脂缝隙天线工作频段满足RFID的2.45 GHz频段范围,具有较高的增益、较远的阅读距离和车辆识别所需的多波束辐射方向图。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.