高端MOS管栅极驱动技术研究

高端MOS管驱动电路在高压输入大功率电源中被广泛应用。分析了高端MOS管的驱动原理,对影响高端MOS管驱动的各种因素进行了探讨,提出了适合高端MOS管驱动的基本方法。较全面地评估了传统的变压器驱动电路和自举驱动电路对高端MOS管驱动的影响,继而提出了适合高端MOS管驱动的线路结构,并采用该方案设计了一个实验电路。仿真和实验电路测试结果表明,设计电路满足要求。     

基于正交矩阵的8行寻址LCD驱动电路

在驱动大尺寸STN-LCD屏时,多行寻址(MLA)LCD驱动方式具有比IAPT驱动方式更优良的对比度和抗串扰能力,功耗更低。基于正交矩阵算法,在分析驱动电路原理的基础上设计了一种8行寻址(MLA-8)LCD驱动电路。基于Maxchip 0.18 μm 18 V CMOS工艺实现了流片。测试结果表明,该8行寻址LCD驱动电路比传统IAPT驱动电路的功耗降低了70%。     

制作简单、性价比很高的10W功率放大器——日本’94自制放大器竞赛参赛作品介绍

本文介绍的是一款制作非常容易,调整方便、性能好、价格低的10W 功率放大器。在本年度日本自制放大器竞赛中荣获大阪赛区第八名。一、电路特点该放大器的电路如图1所示。该电路是由单端推挽(SEPP)电路演变而来的。在电路中对输出晶体三极管的激励方式作了改进,用两个运算放大器分别驱动两只担任互补推挽输出的功率放大管,两只功率放大管通过发射极电阻相连,扬声器接在发射极电路中。该放大器电路与以往的 SEPP 电路(图2)在下面四个方面有所不同。(1)不需要偏置电路。(2)用运算放大器的输出直接驱动功率放大管。(3)偏置电压的稳定度极高。(4)不需要静噪电路。下面就这四个不同点加以说明。在该电路中由于使用了两个运算放大器,运算放大器本身兼作输出电平的     

硅基有机发光微显示像素驱动电路设计

由于微型显示像素面积的限制,硅基有机发光微显示像素驱动电路需要实现足够小的驱动电流.文章提出的三管电压控制型像素驱动电路与常规的采用电流镜电路的电流控制型像素驱动电路都能实现微显示所需的小电流驱动.利用Synopsys公司的H-spice软件对两种电路仿真比较,发现电流控制型电路具有线性灰度和较宽的有效灰度范围,但是通过调整电压控制型电路中与OLED并联的晶体管的宽长比,即可使其有效灰度范围与电流控制型电路可比.同时也发现电流控制型电路的功耗是电压控制型电路的4倍以上,且电路形式较复杂,工艺要求较高.所以三管电压控制型电路更适合于硅基有机发光微显示驱动电路.     

SEPP和SRPP电路简介

SEPP为Single-Ended Push-Pull的字头，原意为单端推挽电路。SRPP为Shunt Regulated Push—Pull的字头，原意为分压调整式推挽电路。这两种推挽电路均属推挽两管并联驱动负载的单端推挽电路，其区别是，SEPP需由倒相器提供两路相位相反的驱动信号，而SRPP只需一组驱动信号，通过串联于两管之间的分压电阻为另一推挽管提供相位相反的驱动信     

IR215×在荧光灯电子镇流器中的应用

<正> 目前国内生产的荧光灯电子镇流器绝大多数采用驱动变压器式的半桥拓扑结构来驱动功率MOSFET,两只功率MOS-FET管在驱动变压器的作用下交替导通给灯管提供电流,开关频率由LC共振频率决定。这种电路存在着以下缺点:(1)电路本身不能自启动,通常要在低侧功率MOSFET管栅极加上双向触发二极管才能在电路接通瞬间触发低侧功率MOSFET管;(2)驱动变压器限制了电子镇流器的小型化;(3)驱动变压器的生产成本高。 采用IR215×系列控制集成电路取代传统的变压器驱动方式可克服上述缺点。IR215×系列芯片为高压、高速功率MOSFET或IGBT驱动集成电路,可驱动高侧和低侧MOSFET或IGBT,能够提供高达600V的直流偏置电压,具有自振荡或     

一种新型高频感应加热用驱动电路

对于感应加热电源来说，在高频时对逆变器开关管损耗的控制比低频时更为严格，对其上升沿、下降沿的时间也要有更精确的控制，一个好的驱动电路可以很好的减小开关管的开关损耗。文中介绍了一种电流型高频感应加热电源用MOSHFET驱动电路,它结合IXDD414CI芯片进行设计，结构十分简单，工作频率高，时延很小，可靠性好。给出了驱动电路应用于200kHz／50kW电流型逆变器的实验结果，证明这个驱动电路运行状况良好，实用性强。     

半桥射频MOS管驱动电路设计

基于半桥拓扑结构的特点,得出了MOS管驱动电路的基本要求,重点分析了MOS管驱动电路各分电路的设计参数,实验验证了驱动电路的合理性.     

TFT-OLED像素单元电路及驱动系统分析

本文基于TFT-OLED有源矩阵像素单元电路,着重分析了两管TFT结构、三管TFT结构、四管TFT结构及多管TFT结构的电压控制型与电流控制型像素单元电路的工作原理和优缺点,指出电压控制型电路具有响应速度快的特点,而电流控制型电路则能准确地调节显示的灰度.最后简要讨论了控制/驱动IC对TFT-0LED有源驱动电路的影响.     

一种新的有源OLED交流驱动电路

在电流编程像素电路的基础上提出了一种新的交流驱动电路结构.该电路结构不仅能实现OLED的交流驱动,而且能避免由于制作过程的变化和长时间的工作引起的驱动管阈值电压漂移的现象,这种现象将导致OLED显示屏的亮度不一致.另外这种驱动方式还能消除在反偏脉冲起始和结束时刻的尖峰电流.最后,用AIM-SPICE软件对电路进行了仿真,仿真结果表明OLED器件在恢复时间内处于反偏状态.     

Mirrored OLED pixel circuit for threshold voltage and mobility compensation with IGZO TFTs

In this paper, pixel circuit using mirroring structure with Indium–Gallium–Zinc oxide (IGZO) thin film transistors (TFTs) for active matrix organic light emitting diode (AMOLED) display is proposed. This pixel circuit consists of only four TFTs, and one capacitor. Due to the mirroring structure, characteristic of the driving TFT can be precisely sensed by the sensing TFT, which is deployed in a discharging path for gate electrode of the driving TFT. This discharging process is strongly dependent on threshold voltage (V_T) and effective mobility of the sensing TFT. Circuit operating details are discussed, and compensation effects for threshold voltage shift and mobility variations are verified through numerical derivation and SPICE simulations. Furthermore, compared with conventional schematics, the proposed pixel circuit might have much simplified external driving circuits, and it is a promising alternative solution of high performance AMOLED display.     

A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED

We propose a new hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel circuit for an active matrix organic light-emitting diode (AMOLED) employing a voltage programming. The proposed a-Si:H TFT pixel circuit, which consists of five switching TFTs, one driving TFT, and one capacitor, successfully minimizes a decrease of OLED current caused by threshold voltage degradation of a-Si:H TFT and OLED. Our experimental results, based on the bias-temperature stress, exhibit that the output current for OLED is decreased by 7% in the proposed pixel, while it is decreased by 28% in the conventional 2-TFT pixel.     

一种基于低温多晶硅薄膜晶体管的交流AMOLED像素补偿电路

This paper presents a new poly-Si pixel circuit employing AC driving mode for active matrix organic light-emitting diode （AMOLED） displays. The proposed pixel circuit, which consists of one driving thin-film tran- sistor （TFT）, three switching TFTs, and one storage capacitor, can effectively compensate for the threshold voltage variation in poly-Si and the OLED degradation. As there is no light emission, except for during the emitting period, and a small number of devices used in the proposed pixel circuit, a high contrast ratio and a high pixel aperture ratio can be easily achieved. Simulation results by SMART-SPICE software show that the non-uniformity of the OLED current for the proposed pixel circuit is significantly decreased （〈 10%） with an average value of 2.63%, while that of the conventional 2T1C is 103%. Thus the brightness uniformity of AMOLED displays can be improved by using the proposed pixel circuit.     

具有顶部发光结构的AMOLED交流驱动电路

A new voltage programmed pixel circuit with top emission design for active-matrix organic lightemitting diode(AMOLED) displays is presented and verified by HSPICE simulations.The proposed pixel circuit consists of five poly-Si TFTs,and can effectively compensate for the threshold voltage variation of the driving TFT.Meanwhile,the proposed pixel circuit offers an AC driving mode for the OLED by the two adjacent pulse voltage sources,which can suppress the degradation of the OLED.Moreover,a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period.     

基于低温多晶硅薄膜晶体管的AMOLED交流像素电路

This work presents a new voltage programmed pixel circuit for an active-matrix organic light-emitting diode(AMOLED) display.The proposed pixel circuit consists of six low temperature polycrystalline silicon thinfilm transistors(LTPS TFTs),one storage capacitor,and one OLED,and is verified by simulation work using HSPICE software.Besides effectively compensating for the threshold voltage variation of the driving TFT and OLED,the proposed pixel circuit offers an AC driving mode for the OLED,which can suppress the degradation of the OLED.Moreover,a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period.     

A poly-Si AMOLED display with high uniformity

An active-matrix organic light-emitting diode (AMOLED) display based on the polycrystalline silicon backplane technology has been fabricated that employs a new pixel circuit to compensate for the variation in the threshold voltage of the thin film transistors (TFT). The new pixel circuit also copes with the voltage drop in the supply line and a very high contrast ratio can be achieved. The uniformity of the new AMOLED display is remarkably improved compared with the basic two-TFT pixel structure, and it can be readily applied in the mass production of commercial AMOLED displays.     

Functional Pixel Circuits for Elastic AMOLED Displays

While fabrication of active matrix organic LED (AMOLED) displays on plastic substrates continues to face technological challenges, stable electrical operation of thin-film transistor (TFT) pixel circuits under mechanical stress induced by substrate bending remains a critical issue. This paper investigates strain-induced shifts in hydrogenated amorphous silicon TFT characteristics and the compound impact on TFT circuit behavior. Measurements show that the magnitude of the shifts is determined by the direction of current flow in the TFT with respect to the bending stress orientation as well as bias conditions. Physically based compact models are developed that relate device characteristics to material behavior for design and optimization of AMOLED pixel circuits that can maintain immunity to bending stress. In particular, current mirror-based pixel circuits are presented that compensate for the long term threshold voltage shift and instantaneous strain-induced shifts in device characteristics.     

A new pixel circuit for driving organic light-emitting diode with low temperature polycrystalline silicon thin-film transistors

A new pixel circuit design for active matrix organic light-emitting diode (AMOLED), based on the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) is proposed and verified by SPICE simulation. Threshold voltage compensation pixel circuit consisting of four n-type TFTs, one p-type TFT, one additional control signal, and one storage capacitor is used to enhance display image quality. The simulation results show that this pixel circuit has high immunity to the variation of poly-Si TFT characteristics.     

一种LTPS-TFT AMOLED像素电路的理论研究

本文对一种LTPS-TFT AMOLED电压型阈值电压(V_(th))补偿像素电路进行了理论研究,分析了影响V_(th)补偿效果的主要因素。电路的补偿效果主要由驱动TFTV_(th)的获取精度和随后的保持精度决定。在V_(th)获取过程中,相关误差主要由驱动TFT转移特性电流对存储电容充电的充电率不足产生;在显示信号与V_(th)叠加过程中,与V_(th)保持节点连接的电容增量等因素会造成V_(th)保持精度的损失。根据分析的结果,本文解释了高分辨率像素电路补偿效果下降的原因。     

A New Poly-Si TFT Current-Mirror Pixel for Active Matrix Organic Light Emitting Diode

A new poly-Si thin-film-transistor (TFT) current-mirror-active-matrix-organic-light-emitting-diode (AMOLED) pixel, which successfully compensates for the variation of the threshold voltage as well as mobility in the excimer laser annealed poly-Si TFT pixel, is designed and fabricated. The OLED current$(I_ OLED)$of the proposed pixel does not depend on the operating temperature. When the temperature of pixel is increased from 27$^circhboxC$to 60$^circhboxC$, the$I_ OLED$of the new pixel circuit composed of four TFTs and one capacitor increases only about 1.5%, while that of a conventional pixel composed of two TFTs and one capacitor increases about 37%. At room temperature, nonuniformity of the$I_ OLED$in the proposed circuit was also considerably suppressed at around 9%. We have successfully fabricated a 1.2-in AMOLED panel$(hbox96 times hbox96 times hboxred green blue)$to evaluate the performance of the proposed pixel. A troublesome residual image caused by the hysteresis phenomenon of the poly-Si TFT was almost eliminated in the proposed AMOLED panel as a result of current programming.