基于DVD双光束多层数据存储系统的设计及仿真

为了实现三维光信息存储的实用化,在三维光盘存储实验系统的基础上,改进、设计出了一种可用于三维数据存储的单侧读写光学头。对光学头进行了光学和控制系统的设计,利用专门设计的耦合分光棱镜进行光束耦合和分离;采用双音圈电机控制透镜的方式实现数据的选层;进行了聚焦伺服系统的建模和仿真。结果表明双光束焦点同步误差保持在±3μm之内。     

多光束全息光学头的实现及伺服信号分析

提出了多光束全息光学头的全新思想 ,它综合了多光束光学头并行存储和全息光学头灵巧紧凑的优点 ,在提高数据传输速率的同时还可以缩短随机存储时间。在此基础上 ,对该光学头的伺服信号进行了理论分析 ,并进行了实验研究。     

耦合场作用下光机系统成像质量分析研究

精确的光机分析是实现系统优化设计的前提。针对耦合场作用导致光机系统中光学元件面形发生非回转对称的变化,提出了Zernike拟合的三维接口模型,以提高光机分析数据转换精度,实现耦合场作用下光机系统的高精密分析。对某光机系统进行重力和温度场耦合集成分析,提取各光学面形变化的非对称分布,并借助该三维接口模型在光学设计平台中对系统成像质量进行分析,用于后期系统优化设计。结果表明该接口模型可应用于实际多场作用下的光机系统分析。     

双光子激光三维微细加工及信息存储技术

利用具有极高脉冲光强的飞秒激光器和对光束进行强聚焦的显微镜装置可以制造具有亚微米精度的三维微器件以及进行三维高密度信息存储。文本介绍了自行开发的双光子微细加工系统以及三维高密度信息存储系统，以及用该系统进行三维光学微细加工及三维光学信息存储的实验情况，给出了部分利用已建立的加工系统所获得的初步实验结果。     

激光再制造三维运动光束头

基于激光制造技术相关理论，设计并制造了激光同轴转动三维运动光束头。分析了三维运动光束头工艺参数对熔覆效果的影响，并讨论了其在工业应用实验中取得的效果。结果表明，该三维运动光束头能绕竖直轴转动和水平轴摆动;在参数一定的条件下，随着光束头摆动角度的增加，熔覆效果越来越不理想，理想的摆动角度为0°～45°;配合送粉头的粉末流聚焦及焦点可调功能，该光束头可以实现曲轴、螺杆、叶片等复杂型面零件的制造和再制造。     

双光子激光三维微细加工及信息存储技术

利用具有极高脉冲光强的飞秒激光器和对光束进行强聚焦的显微镜装置可以制造具有亚微米精度的三维微器件以及进行三维高密度信息存储。文本介绍了自行开发的双光子微细加工系统以及三维高密度信息存储系统 ,以及用该系统进行三维光学微细加工及三维光学信息存储的实验情况 ,给出了部分利用已建立的加工系统所获得的初步实验结果     

双光子激光三维微细加工及信息存储技术

利用具有极高脉冲光强的飞秒激光器和对光束进行强聚焦的显微镜装置可以制造具有亚微米精度的三维微器件以及进行三维高密度信息存储.文本介绍了自行开发的双光子微细加工系统以及三维高密度信息存储系统,以及用该系统进行三维光学微细加工及三维光学信息存储的实验情况,给出了部分利用已建立的加工系统所获得的初步实验结果.     

基于反射率探测的多记录层相为可擦重写光学存储技术

对多记录层光学存储技术进行了详细的论述。提出了采用探测反射率来实现三维光学存储的新方案。研究可擦重写存储介质的特性。为系统的实现提供了较为完善的设计思路。为实现三维光学存储奠定了坚实的基础。     

半导体激光列阵的高功率高亮度光纤耦合技术

设计了一种可同时实现高功率和高亮度激光输出的简单有效的光纤耦合技术.首先借助光纤列阵实现光束由线性排列到圆形排列的转换,从而有效提高半导体激光列阵输出光束的对称性;然后通过微透镜将光纤列阵输出的圆对称光束耦合进入一根较细的光纤,以进一步压缩光斑直径并提高光束亮度.基于几何光学的理论分析表明;在合适的参数条件下,直径为1.3 mm的光纤列阵输出光束与直径为0.4 mm的单根光纤的耦合效率可达90%以上,即在功率损耗低于10%情况下,激光束的亮度提高了近9倍.     

超高密度光存储技术

文章从三维体存储和近场光存储两个方向介绍了超高密度光存储技术。三维体存储 包括:体全息数据存储、双光子吸收存储和多层存储。体全息数据存储容量大、寻址快、存储寿命长;双光子吸收存储也属于多层记录存储,存储形式多样,本文以光致色变光存储为例进行讨论。海量存储的另一个研究方向是近场光存储,该技术与传统光存储显著的区别在于:用纳米尺寸的光学探针距记录介质纳米距离实现纳米尺寸光点的记录,从而实现超高密度光存储。文章最后对超高密度光存储发展及应用趋势进行了阐述。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-