基于光纤阵列图像转换器的可见光生成系统

红外图像转换器技术是红外成像目标仿真技术的关键,用于研究如何在红外成像制导半实物仿真试验时模拟产生复杂场景的红外辐射。光纤阵列图像转换器是一种新型的红外图像转换器,该类转换器需要设计研制与之相匹配的可见光生成系统共同构成红外成像目标模拟器。针对某红外成像目标模拟器总体要求,给出了一种基于光纤阵列图像转换器的可见光生成系统设计实现方法,并对其关键性能指标进行了分析和测试。结果表明:该系统能够应用于红外成像半实物仿真,分析和测试方法为该类可见光生成系统的性能评估和优化设计提供了依据,具有一定的适用性。     

基于MEMS的红外动态图像生成技术

提出了一种基于MEMS技术的红外动态图像生成技术。利用热传导方程,建立了可见光/红外图像转换膜的理论模型;介绍了可见光/红外图像转换膜制作的工艺流程,制作了一张像元数为512512、像元尺寸为35m的可见光/红外图像转换膜。并利用转换膜构造了红外动态图像生成装置,通过实验对红外动态图像生成装置的性能进行了研究。利用MEMS技术制作的可见光/红外图像转换膜可以工作在红外3~5m和8~12m两个波段。根据实验测得红外图像生成装置的空间分辨率为14 lp/mm,在3~5m波段,所生成红外图像的温度范围为250~440 K,在8~12m波段,所生成红外图像的温度范围为250~400 K。     

红外图像转换器传递函数测试方法

红外图像转换器是红外成像制导武器半实物仿真系统红外成像目标模拟器的重要组成部分,用于产生动态红外目标/干扰环境特性图像。图像传递函数是评价图像转换器性能优劣的一项综合性技术指标,包含了图像在不同等效黑体温度条件下,不同分辨率对应的图像调制度。叙述了红外图像转换器图像传递函数的定义和测试方法,用经过标定的热像仪和光学放大系统对红外图像转换器产生的图像进行放大,测试了亮、暗条纹的辐亮度,计算了条纹对的对比度。描述了红外热像仪的标定方法和使用注意事项,给出了256×256元MOS电阻阵列红外图像转换器图像传递函数的测试结果。该文可作为红外图像转换器性能考核的参考。     

8～12μm红外图像生成装置

介绍了一种将可见光图像转换为红外图像的装置.装置的核心器件是利用MEMS工艺制作的可见光/红外图像转换芯片.红外图像生成装置包括可见光图像生成系统、可见光/红外图像转换系统以及红外图像投影光学系统三部分.红外图像生成装置产生的红外图像辐射波段覆盖8~12μm,分辨率达到了20 lp/mm,可模拟温度范围为20~150℃,图像非均匀性小于5%,几何畸变小于3%.     

动态红外图像生成技术综述

利用半实物仿真系统能在实验室内对红外戍像仪,导弹寻的器及各种红外探测系统的动态性能进行测试和评估,其核心技术是动态红外图像生成.介绍了动态红外图像生成的各种方法,包括电阻阵列、二极管阵列、基于激光束扫描的图像生成技术、薄膜转换器、基于光纤阵列的红外图像转换技术、红外CRT、可变形反射镜阵列、液晶光阀、基于MEMS技术的空间光调制器和基于LCOS的红外空间光调制器等.对这些技术进行了详细的描述,包括基本原理、关键技术及发展概况,并讨论了其相对的优缺点.最后,对各种方法的性能参数进行比较和对照.     

MOS电阻阵列红外图像转换器性能测试

红外图像转换器技术是红外成像仿真系统中的一项关键技术,它可在半实物(HWIL)仿真系统中用来对红外探测系统的实时性能进行测试和评估。基于微机械技术发展起来的MOS电阻阵列是动态红外图像转换器中的一种。介绍了MOS电阻阵列动态红外图像转换器的发展现状及美国Eglin空军基地宽波段红外场景投影器(WISP)的测试技术。结合实际应用,提出了一种基于红外显微光学镜头的MOS电阻阵列动态红外图像转换器测试方法,给出了部分图像测试结果。     

红外动态图像生成技术

利用热传导方程,从理论上探讨了基于光纤面阵红外图像生成的机制,分析了光纤端面吸收膜表面处红外辐射的时间常数随吸收膜材料的发射率、光纤材料热传导系数、光纤材料比定压热容、光纤材料密度,以及激发光的功率和脉宽的变化规律.提出了一种被动式红外动态图像生成技术,其空间分辨率只受可见光图像的分辨率和光纤面阵总的像束数影响.为实验装置的设计提供了理论依据.应用该原理制作的图像转换装置所得到的红外图像可用于对红外成像仪器和设备进行动态性能检测和标定,以及红外成像仿真实验.     

数字微镜阵列红外动态景象模拟器的研制

红外动态景象模拟器为红外半实物仿真系统提供动态目标和背景,是半实物仿真系统的核心技术之一.介绍了基于数字微镜阵列研制的红外动态景象模拟器的组成、工作原理和技术指标.描述了数字微镜阵列红外动态景象模拟器的4大关键技术,即红外图像转换技术,红外图像转换器的同步调制驱动技术,红外光学耦合技术和红外热像逼真度修正技术.分析了红外图像转换器同步与不同步驱动对图像采集的影响.给出了经研制的数字微镜阵列景象模拟器产生、红外热像仪获取的红外图像.实验结果表明:该模拟可广泛应用于红外成像探测系统的仿真、测试和标定.     

基于近红外视觉的排渣机械手高温炉渣定位方法

针对金属冶炼排渣机械手对炉渣位置定位的问题,本文提出了一种基于近红外视觉的高温目标定位方法。使用红外阵列传感器和CMOS摄像头结构光三维重建视野标定后搭建出一套近红外视觉系统。用蜡烛光模拟高温炉渣,将红外阵列传感器采集的温度点阵数据绘制出伪彩色温度分布图,利用仿射不变性原理将其与彩色图像配准融合,生成高温炉渣及其周围环境的红外-可见光融合图像。最后,利用红外阵列传感器横、纵视野角分量投影的方法得到高温炉渣的三维坐标。实验结果表明,红外阵列传感器定位高温炉渣的方法是可行的。定位得到高温炉渣的三维坐标为机械手提供目标期望给定,机械手可进一步完成排渣任务。     

采用GPU并行架构的基于互信息和粒子群算法的异源图像配准

对于异源可见光与红外图像配准,以互信息为相似性度量条件,以粒子群算法为搜索算法,在搜索空间中搜索极大值点,通过改变图像分辨率,由粗到精,逐步实现可见光图像与红外图像的配准,对粒子群算法、统计互信息和仿射变换3个部分的内在并行性,利用CUDA C语言实现GPU-CPU异构编程。实验证明,在不降低精度的前提下提高了算法效率,得到了很好的加速比,算法正确匹配率高,鲁棒性好,计算效率高。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-