三角牌电饭煲常见故障的检修

为了解决上班族做饭问题，不少厂家近年来推出了定时保温式自动电饭煲，比如三角牌CFXB45-S70、美的牌CFXB40-4、希贵牌GDB65—5／GDB85-C等。这类电饭煲是在原豪华型保温式自动电饭煲的基础上加装了定时装置（定时装置分电子式和机械发条式两种），     

应该为新型电饭煲买单么？

米饭我们一日三餐都少不了。作为每天都要吃的食物,我们是不是应该在上面多进行—些投资？于是,新型电饭煲就应运而生了,价格从几百到几千元,三菱NJ-WSIO售价更是高达7000多元。新型电饭煲是否就比普通的电饭煲做出的饭好吃？我们是否应该为新型电饭煲买单？于是,《数字家庭》就有了这次趣味测试。     

电饭煲节电清洁附加器的研究和制作

该文通过设计的电饭煲外置附加器,来实现电饭煲的更多功能。解决了目前在大多数家庭中使用的普及型电饭煲存在功能单一和食物汤水外溢的问题。电饭煲外置节电装置通过温度传感器采集电饭煲出气孔的温度,遵照食物先大火后小火的烹调原则:烧稀饭或其他需要焖烧的食物时全功率加热至100℃,自动转低电压煲;烧干饭时全功率加热至100℃自动关闭,延时5min后通电把饭烧好,电饭煲内的米汤不会外溢出来,具有既节电又清洁卫生及操作方便等优点。     

全自动电压力锅

电饭煲、焖烧锅、高压锅成为居家生活的好帮手,受到家庭主妇们的喜爱。如果一种锅同时兼备三种锅的功能,且更安全,岂不更实用方便,更节约厨房空间?由山东淄博某集团推出的一种“多星牌”安全自动电力锅,集三种锅功能为一体,实现了各自功能的有机结合。这种新型安全自动电压力锅不仅可一锅三用,而且具备了更强的使用功能:由     

家用电器的胶粘维修方法

家用电器使用时间久了,难免有损坏现象。现介绍家用电器的胶粘维修方法。1.电饭煲磁片的粘贴:使用时间较长的电饭煲,由于电源开关冲击震动,使底盘中心的弹簧支撑顶心的小圆盒内的方磁片脱落,失去了磁吸作用,致使电饭煲在电路接线正常情况下把饭烧焦,电源也不会自动关掉,。修复时首先把底盘的小圆盒拆开,取出磁片,然后用锯片将残胶刮净,并用180#汽油清洗干净。用南大-704或HZ703胶粘接好新的磁片后,室温下固化24小时,可使电饭煲恢复正常。     

家用电器的胶粘维修方法

家用电器使用时间久了,难免有损坏现象.现介绍家用电器的胶粘维修方法. 1.电饭煲磁片的粘贴:使用时间较长的电饭煲,由于电源开关冲击震动,使底盘中心的弹簧支撑顶心的小圆盒内的方磁片脱落,失去了磁吸作用,致使电饭煲在电路接线正常情况下把饭烧焦,电源也不会自动关掉,.修复时首先把底盘的小圆盒拆开,取出磁片,然后用锯片将残胶刮净,并用180#汽油清洗干净.用南大-704或HZ703胶粘接好新的磁片后,室温下固化24小时,可使电饭煲恢复正常.     

电饭煲超温保护器不可去

电饭煲在城镇家庭中可谓家喻户晓,人人皆知。它是南方地区煮米饭不可缺少的炊具。有时米饭刚煮熟一半它就“罢工”,此时若不懂点电子技术知识,真是对它没办法,只好送家电维修部。其实电饭煲的原理比较简单,它由发热盘、超温保护器(有的电饭煲用保护电阻)、限温器(磁钢)、开关总成、保温外壳和指示灯等组成。如果了解原理,用户就可自己修理电饭煲。     

厨房新潮一族——电脑电饭煲

电饭煲方便、卫生深受人们喜爱。但有人觉得电饭煲煮出的米饭不如铁锅柴灶煮出的饭松软、可口。采用模糊控制的电脑电饭煲,由于能模拟人的大脑思维,在一定程度上克服了普通电饭煲的缺点。     

单片机模糊控制在电饭煲中的应用

介绍用新型HT46R47型单片机和模糊控制技术实现的电饭煲。他具有电路简单、成本低廉、节省能源、安全可靠等特点。     

电饭煲检修一则

故障现象:三角牌T8-650型保温自动电饭煲,饭水未干开关提前跳开。分析检修:打开底盖,首先把积聚在自动开关总成和发热盘上的污垢、杂物清除干净。然后,仔细检查发现保温器和双金属片式开关触点(簧片)烧蚀、氧化严重。遂用改锥把锈蚀到除再涂抹一点硅脂。将双金属片式开关上的螺钉适当拧松一点,使弯曲的弧度增大,克服动作点过低的现象。经此妥善处理后,电饭煲恢复     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its