高功率毫米波回旋器件实验研究

介质加载是解决回旋行波管振荡一个较好的方法,本文利用这种结构在Ka波段回旋行波管的实验中利用这种结构在工作模式TE01,加速电压66 kV,电子注电流13A得到了293 kW的峰值输出功率,最大增益56 dB,效率34.2％,3 dB带宽2.1 GHz的结果;介绍了W波段回旋行波管、回旋振荡管、Q波段回旋行波管的实验情况.     

具有高稳定性的超高增益回旋行波管放大器

该文结合线性理论和自洽非线性理论对Ka波段TE11模超高增益回旋行波管放大器的稳定性进行了研究。 研究揭示了回旋行波管中前向波绝对不稳定性和返向波振荡之间的区别,以及分布损耗技术对这两种自激振荡的抑制作用,并首次提出通过渐变磁场技术来提高系统的稳定性。基于该分析方法设计的Ka波段超高增益回旋行波管,采用电压100 kV,电流7 A,速度零散5％的电子注,获得了-1 dB的饱和功率带宽约5 GHz,最高增益约80 dB。     

Ka波段宽带螺旋线行波管研制

主要针对Ka波段宽带高功率螺旋线行波管慢波结构进行了优化设计,旨在提高行波管输出功率和效率,并对返波振荡特性进行了仿真分析。行波管测试结果表明,在工作频段26.5～40 GHz,连续波输出功率大于200 W,总效率超过41%,增益大于31.5 dB。该管可作为Ka波段大功率毫米波功率放大器,应用于各类军事和民用电子系统中。     

W波段回旋行波管仿真设计与热测实验

通过软件仿真方法分析和设计了W波段回旋行波管的输入输出耦合器、磁控注入式电子枪以及高频互作用电路,根据优化结果加工了实物并进行了热测实验.实验结果表明,电子注电压60 k V,电流6 A,在94 GHz频率获得了最大峰值功率78 k W,增益53.9 d B以及21.7%的效率,峰值功率大于50 k W带宽达到3.8 GHz.PIC粒子模拟和热测实验均表明,设计的W波段回旋行波管能够稳定的工作,从而证明周期加载高频互作用电路在抑制寄生模式以及自激振荡方面具有很大的优势.     

分布损耗回旋行波管线性分析与稳定性研究

研究了分布损耗材料导电特性的下降能够增强回旋行波管注-波互作用段对电磁波的衰减,提高了绝对不稳定性振荡的起振电流和竞争模式回旋返波振荡的起振长度;但同时减小了回旋行波管的线性增长率及其轴向功率和高频场增益.给出了石墨乳涂敷圆波导结构回旋行波管工作参数,采用电子束电流,I_0=10A、注-波互作用段长度L=10cm时的设计结果,在兼顾功率和增益的条件下,能够有效抑制不稳定性,保证其稳定工作.     

W波段二次谐波回旋行波管放大器

采用谐波工作的回旋管互作用磁场比基波磁场降低了1/s,可降低整管磁场设计难度,具有较大的应用前景。通过对W波段二次谐波回旋行波管高频介质加载结构、模式竞争和注波互作用研究,确定了该放大器的工作参数。非线性模拟表明,当应用100 kV,20 A,α=1.2的电子注时,该回旋管可在91 GHz频率处产生465 kW的输出功率和49 dB的增益结果。并且,基于耦合波理论,讨论了一个轴对称半径微扰的TE02~TE01输出模式变换器,效率在95%以上时,其带宽达到4 GHz。     

损耗介质加载结构Ka波段TE_(01)模回旋行波管放大器稳定性的分析

该文从分析损耗介质加载金属圆波导中电磁波传输特性出发,应用回旋行波管放大器小信号色散方程,研究损耗介质加载结构TE01模回旋行波管放大器绝对不稳定性振荡和回旋返波振荡对器件稳定性的影响.结果表明:损耗介质的加载,可以提高绝对不稳定性起振电流,提高的幅度依赖于工作磁场偏离饱和磁场的程度、电子束横纵速度比等;增加波导损耗介质加载的厚度,可以提高竞争模式的回旋返波起振长度.合理选择波导的损耗层厚度、介电常数以及回旋行波管的工作电压、工作磁场和电子束横纵速度比,可以有效兼顾带宽和抑制不稳定性,保证回旋行波管放大器稳定工作.     

Ku波段环圈慢波结构高功率行波管设计

更高的工作频率和更大的输出功率是当前行波管发展的主要方向。为满足Ku波段行波管日益提升的大功率和高效率发展需求,本文在分析慢波结构参数对色散和互作用阻抗影响的基础上,开展了Ku波段环圈慢波结构高功率行波管研究。研究显示,在12.8 kV和0.4 A的工作条件下,环圈行波管可以提供2672.9 W的峰值输出功率,对应的增益和电子效率分别为51.26 dB和26.10%,瞬时3 dB带宽达到2.5 GHz(14～16.5 GHz)。     

220 GHz周期介质加载波导回旋行波管的理论设计与PIC仿真

通过理论研究和粒子仿真（Particle in Cell , PIC）,设计了一支工作在基波TE01模式下,采用周期性介质加载（PDL）波导的220 GHz回旋行波管（gyrotron traveling wave tube, Gyro-TWT）。通过研究寄生振荡的起振阈值和加载介质环,成功抑制了寄生振荡（绝对不稳定性振荡和返波振荡）。分别采用了非线性理论程序与粒子仿真对注波互作用进行研究,对比了两种结果基本一致。PIC仿真结果显示,优化后的回旋行波管,工作在220 GHz时,在输入70 kV和3 A电子注的情况下,饱和输出功率为55.61 kW,对应的效率为26.48%,饱和增益为53.56 dB,-3 dB带宽为12 GHz。     

损耗介质加载结构Ka波段TE01模回旋行波管放大器稳定性的分析

该文从分析损耗介质加载金属圆波导中电磁波传输特性出发,应用回旋行波管放大器小信号色散方程,研究损耗介质加载结构TE₀₁模回旋行波管放大器绝对不稳定性振荡和回旋返波振荡对器件稳定性的影响。结果表明：损耗介质的加载,可以提高绝对不稳定性起振电流,提高的幅度依赖于工作磁场偏离饱和磁场的程度、电子束横纵速度比等;增加波导损耗介质加载的厚度,可以提高竞争模式的回旋返波起振长度。合理选择波导的损耗层厚度、介电常数以及回旋行波管的工作电压、工作磁场和电子束横纵速度比,可以有效兼顾带宽和抑制不稳定性,保证回旋行波管放大器稳定工作。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its