地下SLF/ELF水平电偶极子在球形地-电离层中产生的场

在非理想导电地面与电离层条件下,导出了地下SLF/ELF水平电偶极子在地上、地下及电离层中产生的电磁场的球谐级数表达式.并提出了一种加速收敛算法,算出了大气层及电离层中的电磁场分布.计算结果表明:地下几十公里的水平电偶极子产生的场除了增加了一个固定衰减外,与地面上的水平电偶极子产生的场分布完全相似,它产生的电磁场可理解为电波首先垂直地透过土壤,然后在地一电离层腔体中传播.在SLF频段,地一电离层空腔中的电磁场可理解为两个"行波"的叠加.在ELF频段,空腔中的电磁场是驻波,其频率变化规律能正确反映出"舒曼"谐振现象.     

海水中极低频水平电偶极子电磁场的解析解

将海水看作线性、均匀、各向同性的半无限大导体空间,利用汉克尔变换及开尔文函数的近似展开式,推导求得了极低频时谐水平电偶极子在海水中产生的电磁场的近似解析表达式.运用推导的解析表达式,可以计算海水中任意场点的电磁场值.     

有限导电平面上方电偶极子电磁场的解析公式

利用广义阻抗边界条件来模拟有限导电平面对电磁场的影响。在此边界条件下,推导出有限导电平面上垂直和水平电偶极子电磁场的解析表达式;赫芝位函数中的索末菲型积分被表达成零阶汉克尔函数与绝对收敛的球汉克尔函数级数之和的形式。利用这些解析公式可方便、准确地计算和分析任意取向电偶极子电磁场的分布。     

SLF/ELF水平电偶极子在地-电离层波导中的场

在非理想导电地面与电离层条件下,导出了SLF/ELF水平电偶极子在球形地-电离层壳体中产生的电磁场的球谐级数表达式,采用一种加速收敛算法,算出了波导中的电磁场分布.根据计算结果,在SLF频段,地面与电离层之间的电磁场可理解为两个"行波"的叠加,且与SLF频段的球面二阶近似算法计算结果吻合很好.在ELF频段,壳体中的电磁场是驻波,其频率变化规律能正确反映出"舒曼"谐振现象.     

在三层介质中运动的时谐水平偶极子产生的电磁场

 为了使舰船轴频电磁场能被真正应用于新型水雷武器引信,本文求解了在三层介质中运动的时谐水平偶极子在固定场点产生的电磁场.求解过程分为两步,首先求解静止时谐偶极子在介质中的固定场点产生的电磁场,然后通过狭义相对论的洛仑兹变换,得到匀速运动的时谐电偶极子在固定场点产生的电磁场.以浅海中低速运动的极低频时谐水平偶极子为例,对其产生的电磁场进行了数值计算,并且通过对比分析不同条件下的计算结果得出了一些有价值的结论.最后通过将计算结果与试验数据的对比,验证了本文的实用性和正确性.     

垂直电偶极子在地-电离层波导中场的球级数解

在非理想导电地面与电离层条件下,我们导出了ELF/SLF垂直电偶极子在球形地-电离层壳体中产生的电磁场的球谐级数表达式,采用一种加速收敛算法,算出了波导中的电磁场分布.根据计算结果,在SLF频段,地面与电离层之间的电磁场可理解为二个"行波"的叠加,且与SLF频段的球面二阶近似算法计算结果吻合很好.在ELF频段,壳体中的电磁场是驻波,其频率变化规律能正确反映出"舒曼"谐振现象.     

水平电偶极子在负折射媒质半空间激励的场

讨论了水平电偶极子在由介电常数和磁导率都为负数的媒质和普通媒质构成的均匀半空间中激励的电磁场,并得出了远区场的解析表达式.理论分析和数值计算结果表明:位于普通介质中的水平电偶极子在普通媒质和负折射媒质分界面能够有效激励表面波.该表面渡是一种"慢波",沿分界面传播的波数小于波在两种均匀媒质中传播的波数.当两种介质均无损耗时,沿径向传播的幅度按波的几何扩散衰减.由于存在三种传播波数,表面波、侧面波、直达波和反射波共同作用形成的总场将发生复杂的干涉现象.     

垂直电偶极子在负折射媒质涂覆基底上产生的场

研究了垂直电偶极子在负折射媒质涂覆的理想导电基底上产生的电磁场,获得了场分量的解析表达式.分析和计算结果表明,电偶极子激发的电磁场可分解为直达波、反射波、侧面波和表面波.其中表面波在负折射媒质表面传播的波数介于空气层和介质层中传播波数之间,其幅度在距离向按波的几何扩散规律衰减,在垂直于介质层方向则以正弦或余弦规律变化.由于存在三种传播波数的波,它们共同作用形成的总场将发生复杂的干涉现象.     

地震ELF/SLF辐射源在地面及电离层中产生的场

针对地震电磁辐射与传播,将地下辐射源理想化为水平ELF/SLF电偶极子,传播介质理想化为地层-大气层-电离层三层平面分层介质,其中地层和电离层都看作均匀有耗介质.在此物理模型下,导出了电磁场在大气层和电离层中的积分表达式,更由留数定理得出了电磁场的级数表达式.计算结果表明:ELF/SLF电波从辐射源出发后,首先以最短的垂直向上路径渗透出地层进入大气层,然后在地-电离层波导中以若干个"波模"叠加的方式向外传播到达大气层中的接收点,并进一步渗透电离层被卫星上的接收点接收.     

位于介质覆盖的导电基底中水平电偶极子的场

讨论了位于有介质层覆盖的非理想导电基底中的水平电偶极子激励起的电磁场,获得了方便于计算的解析表达式,并进行了数值计算和讨论。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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