VHF宽带功率放大器设计

仿真并设计了一款VHF波段宽带大功率放大器.匹配网络采用传输线变压器宽带匹配技术以及微带混合电路,使功率极好地传输.末级采用多个放大器功率合成来满足大功率的要求.采用了负反馈网络改善电路性能,通过预失真网络的调整得到较好的功率平坦度,采用输出耦合反馈控制电路保证功放正常工作.该功放在20 MHz-90 MHz频段内输出功率大于50 dBm,且具有较好的增益平坦度和较高的效率.给出了测试结果,满足设计要求.     

500W宽频带功率放大器的设计与实现

本文以传输线变压器、负反馈、推挽结构为基础,利用ADS软件进行仿真,结合分配合成技术,设计出新的500W宽频带功率放大器,并对该放大器的各个组成部分的设计思路和工作原理进行了介绍.     

225MHz～512MHz宽带功放设计与仿真

根据宽带功放的设计原理,采用平衡式结构,负反馈技术,稳定化技术,传输线变压器以及微带混合匹配电路设计出了一款宽带功率放大器。用ADS对其进行优化仿真,通过分析仿真结果,可以看出在225 MHz～512 MHz频段内,放大器功率增益可达到23 dB,增益平坦度小于1.1 dB,理想情况下输入输出驻波比达到1∶1,并具有良好的稳定性。     

225~512MHz宽带功放设计与仿真

摘要：根据宽带功放的设计原理,采用平衡式结构,负反馈技术,稳定化技术,传输线变压器以及微带混合匹配电路设计出了一款宽带功率放大器。用ADS对其进行优化仿真,通过分析仿真结果,可以看出在225MHz~512MHz的频段内,放大器功率增益可达到23dB,增益平坦度小于1.1dB,理想情况下输入输出驻波比达到1：1,并具有良好的稳定性。     

2～30MHz功率放大器设计

根据宽带功率放大器的设计原理，采用传输线变压器宽带匹配技术，用MOSFET晶体管VRF141，设计了一种推挽宽带功率放大器。通过测试，得到较为理想的结果。     

射频宽带大功率放大器模块

利用推挽MOSFET晶体管,通过采用传输线变压器宽带匹配技术,研制出一种宽频带高功率放大器模块。文中给出了测试结果,模块的性能指标良好。     

一种125W短波宽带功率放大器设计

利用推挽MOSFET晶体管,通过采用传输线变压器宽带匹配技术,研制出一种宽频带125W功率放大器模块。文中给出了测试结果,模块的性能指标良好。     

一种预失真可调InGaP/GaAs HBT射频功率放大器

提出了一种具有可调预失真功能的共集电极放大电路,对其动态偏置点及双负反馈回路进行了分析.AWR Microwave Office仿真表明:该预失真电路产生的增益扩展与负相位偏差可以补偿该功率放大器后级电路产生的增益压缩和正相位偏差,提高其线性度.采用该预失真电路作为输入级,设计了一款功率放大器,并基于截止频率为29.5 GHz的2 μm InGaP/GaAs HBT工艺成功流片.测试结果表明,该宽带放大器在3.5 V偏置电压下和1.3～2.0 GHz频段范围内功率增益可达27 dB,P1dB为28.6 dBm,最大功率附加效率为39%.     

“电路与电子线路基础”课程教学博物实验板

本文介绍用于"电路与电子线路基础"课程教学的两套博物实验板。第一套与电路部分课程匹配,包含电池、电阻、电容、电感和变压器、传输线和滤波器;第二套与电子线路部分课程匹配,包含二极管、双极型晶体管、场效应晶体管、运算放大器、功率放大器和振荡器。这两套教学博物实验板与ADI公司的USB接口模拟测试模块相结合,可在课堂上实现电路功能原理的测试和验证,有效提高教学质量。     

HBT自热效应对功率放大器偏置电路的影响及补偿

研究了GaAs HBT的自热效应对功率放大器镜像电流源偏置电路性能的影响.HBT自热效应使得这种偏置电路的镜像精度和温度特性变差.利用HBT器件特有的集电极电流热电负反馈理论,通过优化基极偏置电阻的方法,对自热效应进行了有效补偿,偏置电路的电流镜像精度得到有效提高,偏置电流温度漂移由9.5%减小到0.5%.     

Wide-band integrated optical receiver with improved dynamic rangeusing a current switch at the input

The front end of optical transmission systems usually consists of a low-noise, wide-band, negative-feedback transimpedance or current amplifier. The dynamic range of current amplifiers can be extended considerably by passing large input currents directly to the output of the amplifier. It is shown that the required current switch does not deteriorate the sensitivity of the receiver. A complete front end, using an external p-i-n photodiode, is integrated in a 2.5-GHz bipolar technology. The receiver has a dynamic range (DR) of 73 dB in a bandwidth of 220 MHz and consumes a supply current of 1.5 mA     

一种基于延迟线补偿记忆效应的模拟预失真器

模拟预失真器具有带宽宽、结构简单、功耗低和延时少等优点,满足第五代移动通信系统(5G)及超 5G 的功放线性化对大带宽、低功耗和低延时的要求。然而随着移动通信系统的发展,信号的带宽和调制度越来越 高,功率放大器的记忆效应影响也越来越强,而传统的模拟预失真器无法补偿功放的记忆效应。为了解决模拟预失 真电路的记忆效应补偿问题,文中提出了一种基于延迟线补偿记忆效应的肖特基二极管模拟预失真器(SDD-APD)。 该模拟预失真器采用不等长微带线作为延迟线,用来补偿功放的记忆效应。采用100 MHz 带宽5G 新无线电(NR) 信号对工作在3. 5 GHz 的AB 类功放进行测试,结果表明该模拟预失真器可以补偿功放的记忆效应,并能将功放的 非线性改善10 dB 以上。     

Wideband and high-gain negative-feedback AGC amplifier for high-speed lightwave digital transmission systems

A negative-feedback AGC amplifier based on a new circuit configuration concept is proposed and monolithically integrated. The amplifier exhibits characteristics 2.5 times superior to those of the conventional AGC amplifier: 410 MHz bandwidth, 16 dB maximum gain and 18 dB gain dynamic range.     

简洁构型与馈电的宽带双极化金属锥阵列天线北大核心CSCD

本文提出了一种宽带双极化金属锥阵列天线。该阵列天线以传统的旋转体天线结构为主体,通过在锥体底部开设四道正交的直通槽,以便在锥状单元内部形成可与地板间构成匹配谐振腔的开放式空腔结构。在阵列中,任意两个相邻的锥状单元之间可形成类似于Vivaldi天线的辐射缝隙结构。馈电采用同轴馈电方式,探针无弯折结构,金属锥体无弯折过孔。每个金属锥状单元独立,可极大简化加工、装配和维护过程。该天线具有两个正交极化,分别由左右和前后相邻单元构成。仿真结果表明,在频率范围为2～8GHz内,阵列大部分有源VSWR小于2,小部分端口有源VSWR小于2.5 (相对带宽为120%)。     

5–11 GHz CMOS PA with 158.9 ± 41 ps group delay and low power using current-reused technique

This paper proposes the design of a low group delay and low power ultra-wideband (UWB) power amplifier (PA) in 0.18 μm CMOS technology. The PA design employs two stages cascade with inductive peaking technique to provide broad bandwidth characteristic and higher gain while gain flatness can be achieved by connecting inter-stage circuit. A common gate current-reused technique is adopted at the first stage amplifier to achieve good input matching, low group delay and low power. The simulation results show that the proposed PA design has an average gain of 11.5 dB with flatness of ±0.4 dB from 5–11 GHz, while maintaining bandwidth of 4.2–12.3 GHz. An input return loss (S₁₁) less than −10.4 dB and output return loss (S₂₂) less than −9.5 dB, respectively are obtained. The PA design achieves excellent phase linearity (i.e., group delay variation) of ±41 ps and only consuming 17 mW power from 1.2 V supply voltage. A good output 1-dB compression point OP1 dB of 3.7 dBm is obtained. By using this method, the proposed design has low group delay variation and lowest power among the recently reported UWB CMOS PAs applications.     

Traveling-wave amplifiers with prescribed frequency response

Microwave transistor amplifier combinations that have controlled frequency response over a specified bandwidth were designed. Theoretical analysis of such an amplifier with an arbitrary number of sections is presented. The response of the amplifier is controlled by tapering the frequency selectivity or Q of each section of the amplifier. To verify the theory, a three-section amplifier with maximally flat time delay response was designed, constructed, and evaluated. Existing traveling-wave amplifiers were modeled as lossy transmission lines. Although the amplifiers were relatively broadband, a prescribed frequency response was not achieved, and each transistor did not receive an equal portion of the signal power. Resistive elements were required for impedance matching at the input and output. The design seeks to improve on previous techniques by trading bandwidth for controlled gain. By making the transmission line that connects the amplifier sections nonuniform, the frequency response was controlled over the design bandwidth. The designs can easily be implemented using familiar components     

Technology for extending transmission distance of EPON system

At present, the maximal transmission distance between the optical line terminal (OLT) and opticalnetwork unit (ONU) of an Ethemet passive optical network (EPON) system is 20 km.However, this distance should be extended to 50 km or even longer in some applications such as fiber to the village (FTTV).A method for extending the transmission distance of an EPON system is proposed in this paper, in which the optical power amplifier and the adjustment of dynamic bandwidth allocation (DBA) are the key technologies.     

A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon

A 77-GHz,$+$17.5 dBm power amplifier (PA) with fully integrated 50-$Omega$input and output matching and fabricated in a 0.12-$muhbox m$SiGe BiCMOS process is presented. The PA achieves a peak power gain of 17 dB and a maximum single-ended output power of 17.5dBm with 12.8% of power-added efficiency (PAE). It has a 3-dB bandwidth of 15 GHz and draws 165 mA from a 1.8-V supply. Conductor-backed coplanar waveguide (CBCPW) is used as the transmission line structure resulting in large isolation between adjacent lines, enabling integration of the PA in an area of 0.6$hbox mm^2$. By using a separate image-rejection filter incorporated before the PA, the rejection at IF frequency of 25 GHz is improved by 35 dB, helping to keep the PA design wideband.     

A 0.4–2.3 GHz broadband power amplifier extended continuous class-F design technology

A 0.4–2.3 GHz broadband power amplifier (PA) extended continuous class-F design technology is proposed in this paper. Traditional continuous class-F PA performs in high-efficiency only in one octave bandwidth. With the increasing development of wireless communication, the PA is in demand to cover the mainstream communication standards’ working frequencies from 0.4 GHz to 2.2 GHz. In order to achieve this objective, the bandwidths of class-F and continuous class-F PA are analysed and discussed by Fourier series. Also, two criteria, which could reduce the continuous class-F PA’s implementation complexity, are presented and explained to investigate the overlapping area of the transistor’s current and voltage waveforms. The proposed PA design technology is based on the continuous class-F design method and divides the bandwidth into two parts: the first part covers the bandwidth from 1.3 GHz to 2.3 GHz, where the impedances are designed by the continuous class-F method; the other part covers the bandwidth from 0.4 GHz to 1.3 GHz, where the impedance to guarantee PA to be in high-efficiency over this bandwidth is selected and controlled. The improved particle swarm optimisation is employed for realising the multi-impedances of output and input network. A PA based on a commercial 10 W GaN high electron mobility transistor is designed and fabricated to verify the proposed design method. The simulation and measurement results show that the proposed PA could deliver 40–76% power added efficiency and more than 11 dB power gain with more than 40 dBm output power over the bandwidth from 0.4–2.3 GHz.