SiGe HBT及高速电路的发展

详细讨论了SiGeHBT的直流交流特性、噪声特性,SiGeHBT的结构、制作工艺、与工艺相关的寄生效应、SOI衬底上的SiGeHBT等,以及它在高速电路中的应用,包括低噪声放大器(LNA)、功率放大器(PA),电压控制振荡器(VCO)以及涉及到的无源器件等。     

硅衬底微波集成电路

硅衬底微波集成电路具有诱人的发展前景。本文阐述了硅材料用作微波集成电路衬底的优点,分析了硅衬底微波传输线、无源元件以及锗硅异质结双极晶体管（SiGeHBT)的电性能,介绍了目前国外硅衬底微波集成电路研究的进展,并对数字电路与RF及微波电路在硅衬底上混合集成的特点与应用作了讨论。     

氧化物墙隔离E,B,C的双极高速晶体管制造工艺

本文介绍了一咱ＩＣ中使用的双极高速晶体管制造工艺，该工艺制造的晶体管的Ｅ、Ｂ、Ｃ均由氧化物墙隔离，消除了ｐｎ结的侧壁结，使双极晶体管的两个ｐｎ结基本上成为平面结，提高晶体管的ｆＴ。本文介绍了该工艺的工艺流程。分析了该工艺结构晶体管的特点，介绍了关键工艺步骤的工艺过程及工艺参数。并给出该工艺制的晶体管的电参数及该工艺的应用前景。     

800V／10A和1200V／6A绝缘栅双极晶体管的研制

本文简单介绍了８００Ｖ／１０Ａ和１２００Ｖ／Ａ绝缘栅双极晶体管（ＩＧＢＴ）的研制．重点介绍工艺过程和测试结果．     

SiGe HBT发射极台面湿法腐蚀技术研究

在SiGeHBT的制造工艺中,为了防止干法刻蚀发射极台面对外基区表面造成损伤,从而导致SiGeHBT小电流下较大漏电问题,对SiGeHBT发射极台面的湿法腐蚀技术进行了研究。通过改变超声功率、腐蚀液温度,从中获得了较为理想的腐蚀条件。     

突变反型异质结及其双极晶体管的研制

文章对突变反型异质结的能带图、接触电势差和势垒区宽度进行了讨论和研究。同时，介绍了基于分子束外延(MBE)法生长的SiGe／Si结构的异质结双极晶体管(HBT)制造工艺，并给出了测试结果。     

超高速化合物半导体器件（4）

以高电子迁移率晶体管，异质结双极晶体管微波／毫米波集成电路为例，介绍化合物半导体器件的特点，封装，测试及其应用。     

晶体管热敏参数快速筛选的研究

传统的１００％直流满功率电老化筛选虽然是有效筛选方法，但此工艺毕竟费时、费电、费设备、效率低、成本高、筛选效率差。本文根据晶体管热敏参数异常与潜在缺陷早期失效的关系，论述了晶体管热敏参数快速筛选的机理，并对测试方法及工艺作了一定的讨论，最后考证了快速筛选的可行性。     

12 GHz GaAs/InGaAs异质结双栅功率场效应晶体管

报道了GaAs／InGaAs异质结双杨功率场效应晶体管的设计考虑、器件结构和制作，讨论了所采用的一些关键工艺，给出了器件性能。在12GHz下，最大输出功率≥130mW，增益≥12dB，功率附加效率≥30％。     

0.18μm CMOS工艺全集成LC谐振压控振荡器的优化设计

本文介绍了用0．18μm六层金属混合信号／射频CMOS工艺设计的两个LC谐振压控振荡器，给出了优化设计的方法、步骤和测试结果。两个振荡器均使用片上元件实现。第一个振荡器采用混合信号晶体管设计，振荡频率为2．64GHz，相位噪声为-93．5dBc／Hz@500kHz。第二个振荡器使用相同的电路结构，但采用射频晶体管设计，振荡频率为2．61GHz，相位噪声为-95．8dBc／Hz@500kHz。在2V电源下，它们的功耗均为8mW，最大输出功率分别为-7dBm和-5．4dBm。     

微波功率SiGe HBT的温度特性

通过研究SiGe异质结双极型晶体管(HBT)的温度特性，发现SiGe HBT的发射结正向电压随温度的变化率小于同质结Si双极型晶体管(BJT). 在提高器件或电路热稳定性时，SiGe HBT可以使用比Si BJT更小的镇流电阻.同时SiGe HBT共发射级输出特性曲线在高电压大电流下具有负阻特性，而负阻效应的存在可以有效地抑制器件的热不稳定性效应，从而在温度特性方面证明了SiGe HBT更适合于微波功率器件.     

Applications and processing of SiGe and SiGe:C for high-speed HBT devices

The continued growth of high-speed-digital data transmission and wireless communications technology has motivated increased integration levels for ICs serving these markets. Further, the increasing use of portable wireless communications tools requiring long battery lifetimes necessitates low power consumption by the semiconductor devices within these tools. The SiGe and SiGe:C materials systems provide solutions to both of these market needs in that they are fully monolithically integratible with Si BiCMOS technology. Also, the use of SiGe or SiGe:C HBTs for the high-frequency bipolar elements in the BiCMOS circuits results in greatly decreased power consumption when compared to Si BJT devices.Either a DFT (graded Ge content across the base) or a true HBT (constant Ge content across the base) bipolar transistor can be fabricated using SiGe or SiGe:C. Historically, the graded profile has been favored in the industry since the average Ge content in the pseudomorphic base is less than that of a true HBT and, therefore, the DFT is tolerant of higher thermal budget processing after deposition of the base. The inclusion of small amounts of C (e.g. <0.5%) in SiGe is effective in suppressing the diffusion of B such that very narrow extremely heavily doped base regions can be built. Thus the f_T and f_max of a SiGe:C HBT/DFT are capable of being much higher than that of a SiGe HBT/DFT.The growth of the base region can be accomplished by either nonselective mixed deposition or by selective epitaxy. The nonselective process has the advantage of reduced complexity, higher deposition rate and, therefore, higher productivity than the selective epitaxy process. The selective epi process, however, requires fewer changes to an existing fabrication sequence in order to accommodate SiGe or SiGe:C HBT/DFT devices into the BiCMOS circuit.     

基区Ge组分分布对SiGe HBT热学特性的影响

建立了SiGe HBT热电反馈模型,对基区Ge组分矩形分布、三角形分布和梯形分布的SiGe HBT的热特性进行研究。结果表明,在Ge总量一定的前提下,Ge组分为三角形和梯形分布结构的SiGe HBT峰值温度较低、温差较小,温度分布的均匀性优于Ge组分矩形分布结构的SiGeHBT,具有更好的热特性。对不同Ge组分分布下器件增益与温度的依赖关系进行研究,发现当基区Ge组分为三角形和梯形分布时,随着温度升高,器件增益始终低于Ge组分矩形分布的器件,且增益变化较小,提高了器件的热学和电学稳定性,扩大了器件的应用范围。     

SiGe工艺中HBT结构ESD保护电路设计

为有效控制生产成本,减少工艺步骤,提出了在SiGe工艺中,用SiGe异质结双极型晶体管(HBT)代替传统二极管来实现静电放电(ESD)保护的方案。通过设计不同的HBT器件的版图结构,以及采取不同的端口连接方式,对HBT单体结构防护ESD的能力强弱和其寄生电容大小之间的关系进行了比较分析,并从中找出最优化的ESD解决方案。应用于实际电路中的验证结果表明,此方案在ESD防护能力达到人体模型(HBM)2 kV的基础上,I/O(IN/OUT输入输出)端口的寄生电容值可以做到200 fF以下,且此电容值还可通过HBT串联模式进一步降低。     

多发射极条功率SiGe HBT的热电耦合与优化设计

利用自洽迭代数值计算方法,对多发射极微波功率SiGe HBT芯片热电耦合特性进行了模拟和分析。结果表明,通过对晶体管发射极条长、条间距的调整,可以有效地改善芯片温度分布的不均匀性,提高晶体管的热稳定性和功率处理能力。     

改善不同环境温度下SiGe HBT热稳定性的技术

提出了发射极非均匀指间距技术以增强多发射极指SiGe HBT在不同环境温度下的热稳定性。通过建立热电反馈模型对采用发射极非均匀指间距技术的SiGe HBT进行热稳定性分析,得到多发射极指上的温度分布。结果表明,与传统的均匀发射极指间距SiGe HBT相比,在相同的环境温度及耗散功率下,采用发射极非均匀指间距技术的SiGe HBT,其最高结温明显降低,热阻显著减小,温度分布更加均匀,有效地提高了多发射极指功率SiGe HBT在不同环境温度下的热稳定性。     

Investigation of a SiGe HBT during ESD stress in a 0.18-/spl mu/m SiGe BiCMOS process

This paper investigates the electrostatic discharge (ESD) characteristics of the silicon-germanium heterojunction bipolar transistor (SiGe HBT) in a 0.18-/spl mu/m SiGe BiCMOS process. According to this letter, the open base configuration in the SiGe HBT has lower trigger voltage and higher ESD robustness than a common base configuration. As compared to the gate-grounded NMOS and PMOS in a bulk CMOS process, the SiGe HBT has a higher ESD efficiency from the layout area point of view. Additionally, any trigger biases used to improve the ESD robustness of the SiGe HBT are observed as invalid, and even they can work successfully in bulk CMOS process.     

SiGe HBT传输电流模型研究

基于SiGe异质结双极晶体管(HBT)大信号等效电路模型,建立了SiGe HBT传输电流模型.重点考虑发射结能带的不连续对载流子输运产生的影响,通过求解流过发射结界面的载流子密度,建立了SiGe HBT传输电流模型.该模型物理意义清晰,拓扑结构简单.对该模型进行了模拟,模拟结果与文献报道的结果符合得较好.将该模型嵌入PSPICE软件中,实现了对SiGe HBT器件与电路的模拟分析,并对器件进行了直流分析,分析结果与文献报道的结果符合得较好.     

Multi-finger power SiGe HBTs for thermal stability enhancement over a wide biasing range

Multi-finger power SiGe heterojunction bipolar transistors (HBTs) with emitter ballasting resistor and non-uniform finger spacing are fabricated, and temperature profiles of them are measured. Experimental results show that both of them could improve the temperature profile compared with an HBT which has uniform finger spacing. For the HBT with emitter ballasting resistor, the ability to lower the peak temperature is weakened as power increases. However, for the HBT with non-uniform finger spacing, the ability to improve temperature profile is kept over a wide biasing range. Therefore, the experimental results directly prove that the technique of non-uniform finger spacing is a better method for enhancing the thermal stability of power HBTs over a wide biasing range.     

Simulation of boron diffusion in Si and strained SiGe layers

Boron outdiffusion from the base into the emitter and collector caused by annealing in SiGe heterobipolar transistors (HBTs) has a serious influence on the transit frequency. One solution of the problem of boron outdiffusion is the creation of intrinsic spacers between the base, emitter and collector layers to prevent diffusion of boron across the heterointerface. For optimisation of SiGe HBT properties, several simulators are used. This paper presents a quantitative analysis of a SiGe HBT by process simulators SUPREM IV.GS and ISE TCAD-DIOS. Models for simulation of a boron-doped SiGe base of HBT are discussed and compared.