要闻

飞思卡尔推出V2IP参考设计,支持语音、视频和多媒体业务飞思卡尔半导体(Freescale Semiconductor)近日推出V2IP(Video and voice over-IP)解决方案,以协助制造商快速开发支持新兴多媒体IP业务的各种设备。据称该参考设计是飞思卡尔、Trinity Convergence和RADVISION公司密切协作,共同设计、移植和优化出一整套V2IP方案,它基于飞思卡尔的i.MX21多媒体应用处理器,采用了Linux操作系统。飞思卡尔半导体无线及移动系统部移动多媒体营运经理梁耀光先生介绍说,参考设计是基于飞思卡尔半导体的i.MX21系统级芯片,集成了视频编解码硬件…     

基于无线局域网的多方语音通信系统的实现

介绍了一种基于802.11g协议构建的无线局域网多方语音通信系统.并利用飞思卡尔MC9S12XS128芯片、TLC4560无线传输芯片设计出数字电话终端,实现震铃、拨号、来电显示、短信、通话、电话会议等功能,系统可以方便地接入网,实现信息的全网传输。系统音质良好,功能完善,价格低廉并不长生额外费用,可以实现500米范围能的点对点通信或者是至少5人在内的电话会议的。     

基于MC9S12HY64的汽车双温区空调控制器的设计

本文介绍以飞思卡尔S12系列的16位微处理器MC9S12HY64为核心的双温区自动空调控制系统,包括控制装置介绍、硬件电路设计、芯片选型和PCB设计等。实现了电机控制、LCD显示、传感器采样等功能。     

基于S12ZVL的AFS执行控制器设计

本文针对汽车前大灯随动转向系统控制,提出基于飞思卡尔S12ZVL的混合集成芯片解决方案。本文详细描述汽车前大灯随动转向系统的软硬件设计框图,同时介绍基于飞思卡尔的LIN驱动包的控制器LIN通讯实现。     

简讯

飞思卡尔单芯片高速以太网16位微处理器面世飞思卡尔半导体 (FreescaleSemiconductor)近日推出业界首款全功能单芯片 10 10 0Mbps以太网络器件——— 16位MC9S12NE6 4微处理器。该产品有助于降低系统设计复杂性和成本。据称 ,这款微处理器能取代较为复杂的多芯片以太网络器件。MC9S12NE6 4是飞思卡尔在 16位微处理器系列产品中第一款结合嵌入式以太网络连接的产品。它可以为产业控制应用程序和嵌入式系统提供从网络连结到完整、低成本、高效率的获利解决方案。单芯片以太网络连结MC9S12NE6 4是以飞思卡尔的HCS12中央处理器 (CPU)…     

基于MC9S08LL36便携式血糖仪设计

本文详细介绍了以飞思卡尔MC9S08LL36单片机设计的多功能语音便携式血糖仪.此款血糖仪不仅能精确测量血糖、实时时钟,还具有超低功耗,温度显示,闹铃提示和语音播报等功能.文章介绍了设计的原理、软硬件的设计和血糖实测结果.     

飞思卡尔新一代8位单片机MC9S08QG系列--集成度之高,改写了低端产品的定义!

飞思卡尔新一代8位单片机MC9S08QG主要针对少管脚、低电压及低功耗应用。MC9S08QG体积虽小,但具有极高的集成度,它改写了低端器件的定义。本文首先给出飞思卡尔HCS08 MCU的综述性介绍,然后将从功能特点、支持工具等方面对新一代 8位单片机MC9S08QG进行详细阐述。     

飞思卡尔为便携式设备市场注入活力

11月底“飞思卡尔充电吧”举行的LCD单片机在线研讨会上,飞思卡尔半导体全球产品经理谢晓东先生详细介绍了其全球领先的低功耗LCD单片机——MC9S08LL64,用实例讲解和分析如何利用飞思卡尔低功耗单片机实现领先同行的电子设计,并就飞思卡尔的低功耗LCD单片机的技术创新以及研发心得与工程师们进行了深入讨论。     

新品天地

集成电路Integrated Circuits飞思卡尔单芯片以太网微控制器飞思卡尔半导体公司(Freescale Semiconductor)推出16位MC9S12NE64微处理器,用于替代较为复杂的多芯片以太网产品。该16位MCU可取代之前的多芯片以太网方案,帮助系统开发商降低系统开发难度和成本。MC9S12NE64在飞思卡尔HCS12CPU平台上研发,可提供以太网连接所需的一切功能,如通信堆栈、闪存、RAM、MAC和物理层(PHY)收发器,所有这些封装在一个低引脚数的单芯片内。MC9S12NE64具有以下特征:内嵌符合IEEE 802.3规范的10/100Mbps以太网物理层(PHY)和媒体存取控制器(…     

不断领先的高度集成电场技术

在感应集成电路产品领域,飞思卡尔一直不断推出新产品,扩展产品应用领域.继推出MC33794之后,飞思卡尔半导体日前推出MC34940产品,将其电场(E-field)感应集成电路产品线从汽车应用市场扩展到电器和工业市场.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its