MEMS微拾振器制备工艺研究

采用微机电系统(MEMS)技术制作了悬臂梁式压电微拾振器,该技术主要包括:sol-gel法制备PZT压电膜、干法刻蚀、湿法化学刻蚀、UV-LIGA等工艺。研制的拾振器悬臂梁结构尺寸为:长2000μm,宽600μm,硅膜厚度12μm,PZT压电膜厚1.5μm,Ni质量块长600μm、高500μm。测试表明其固有频率为610Hz,适合低频振动源环境的应用。在1gn加速度谐振激励下,电压输出达562mV。     

应用于智能机翼的压电致动器技术研究

该文针对新型智能机翼翼型变形控制的应用需求,研究了超临界翼型在产生微变形情况下的流谱结构及在10~500μm微变形条件下翼型的气动特性变化。研制出了用于智能机翼的压电陶瓷致动器:位移量为5~290μm,最大输出力为200N,满足智能机翼变形控制需求,验证了压电陶瓷致动器在智能机翼上应用的可行性。     

多层微悬臂梁压电薄膜致动器的静态分析

考虑缓冲层和电极层,建立了一个多层微悬臂梁压电薄膜致动器的静态模型来评估微悬臂梁的致动器的静态性能。对此模型致动器的自由端挠度和致动力进行模拟,同时将得到的结果与有限元模型结果进行对比验证模型的正确性。对比可知,理论模型与有限元模型相符。这项研究为压电致动器的结构设计和性能改善提供了帮助。     

激光微加工电热微夹钳设计与FEA仿真

选用厚度为12.5μm的镍箔,采用激光微加工技术制备尺寸为2.8 mm × 1.4 mm ×0.0125 mm的微夹钳.其每一对级联元件由一系列致动单元组成,而每个致动单元由一个制约器和两个呈半圆形的动作梁构成,其驱动原理是电热效应.运用有限元分析(FEA)仿真了微夹钳的动态性能,对其动态性能进行了实验测试.测试结果表明,当电压为1.9 V时,最大位移量达到28.8μm,延迟时间小于200 ms.     

老年人健康信息管理系统的开发与应用

从电路模型上分析多路复用技术在压电微变形镜控制中的驱动特性,设计了基于双MOSFET开关的驱动电路,并对致动器的电压保持能力和抗干扰能力做了测试.实验和分析表明,一个高压运放驱动25个压电陶瓷(PZT)致动器时,工作频率可达400 Hz,致动器的变形控制精度在2%左右.与传统控制方法相比,该方法具有低功耗、低成本的优点,适用于自适应光学系统中多通道压电微变形镜的控制.     

利用PZT块材制备微型压电悬臂梁采能器的研究

采用压电陶瓷(PZT)片状块材设计并制作了一种可集成于微机电系统的压电悬臂梁能量采集器.介绍了元件的整体制备流程,包括湿法化学蚀刻、反应离子(RIE)干法蚀刻、UV-LIGA等流片技术.该文利用环氧树脂将PZT紧密粘结在基片上的方法步骤和工艺参数作了详细描述,最终获得了2000μm×750μm×500μm(长×底宽×尖...     

低频压电式MEMS振动能量采集器研究

设计了一种低频压电d31模式的"八悬臂梁-中心质量块"结构微机电系统(MEMS)振动能量采集器,实现环境振动能量向电能的转换。首先利用溶胶-凝胶工艺实现PZT压电薄膜的异质集成制造,单个锆钛酸铅(PZT)压电敏感单元的有效尺寸为935μm×160μm×1.5μm;然后通过MEMS加工工艺完成器件微结构的加工制造,器件结构有效体积为9.936×10~(-4)cm~3;最后借助振动测试系统对该器件的各项输出性能进行测试。测试结果表明,谐振频率为60Hz、加速度激励为1g(g=9.8m/s~2)时,该能量采集器的输出电压峰-峰值为232mV。在其两端加载3.0 MΩ的负载时最大输出功率为6×10~(-4)μW,输出功率密度为0.604μW/cm~3,PZT压电敏感单元有效面积下的输出功率密度为0.025μW/cm~2。     

基于MEMS的硅基PZT薄膜微力传感芯片

为了测量毫克级的微小力,设计并制造了一种硅基PZT薄膜悬臂式微力传感芯片。采用溶胶-凝胶(Sol-Gel)方法在Pt/Ti/SiO2/Si衬底上成功制备了厚度不同(300~800 nm)的锆钛酸铅(Pb(ZrxTi1-x)O3)薄膜,薄膜表面均匀,无裂纹。通过测试和分析,研究了PZT薄膜的制备工艺参数和压电、铁电、阻抗特性。采用微机械加工手段制作了长度为1 000μm、500μm、250μm的硅基PZT薄膜微型悬臂结构。当在悬臂的自由端沿着厚度方向施加毫克级的微小力时,微型悬臂就会在厚度方向发生弯曲和振动,通过测量在压电材料表面电极上的电荷量,并通过计算可得到微型悬臂所受的集中力的大小,实现微力的测量。该文还对微力传感芯片的工作方式进行了研究,初步设计了传感器系统模型。     

十字交叉型压电陶瓷致动器的制备方法及性能研究

该文主要设计了一种适应高频响应、高压电性能、低电容的压电陶瓷致动器,并研究了工艺参数对性能的影响.结果表明,6.4 mm×6.4 mm×64 mm(厚度0.5 mm)的十字交叉型压电陶瓷致动器具有滞后性、回零性、对称性好的特点,其电容为27.3 nF,200 V位移约为8μm;富氧去应力退火可降低材料的微缺陷组织,减少...     

光学系统精密调整用陶瓷致动器的控制

陶瓷致动器分为两大类:压电陶瓷致动器和电致伸缩陶瓷致动器。由于其致动机理是内部粒子的运动、重新排列,所以陶瓷致动器替代电磁电机用于光学系统进行精密位置调整时,可以达到更高的精度±0.1μm及     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its