智能变电站二次设备仿真系统可视化研究

针对变电站进行电网运行生产、维护等实际问题,智能变电站的兴起可以有效地解决有关问题,智能变电站的可视化是热点研究方向。文中提出的智能变电站通过仿真系统,使训练对象认识变电站的技术结构、组成设备、运行机制,从而建立智能变电站的系统和网络架构。文中通过模拟IED的仿真和SCD技术设计进行可视化研究。实验中能够将智能变电站二次设备可靠地进行真实模拟并从多媒体视角度达到设备可视化设计。通过实验验证二次设备可视化设计能够为变电站的运行、检修人员的维修提供很好的参考,使变电站更好地运行。     

智能变电站安全措施考试培训系统设计

智能变电站的大规模建设,对变电站的二次检修提出了更高的要求。为提高智能变电站检修效率,提升运维人员智能变电站安措相关知识水平,结合智能变电站检修运维业务需求,开发了一套智能站二次安措考试培训系统。在考试培训系统中集成四个功能模块:SCD可视化模块,直观展示智能变电站各设备虚回路连接关系;屏柜信息可视化模块,自动识别二次设计图纸,直观展示二次物理回路图;安全措施模块,实现二次安措票的自动生成;考试培训模块,基于安全措施自动生成实现考试培训及自动评分。该系统可以提高二次安措票培训和考试效率,保证考评工作客观公正。     

基于VR技术的智能变电站混合巡检培训系统设计

为提升变电站混合巡检培训系统对学员的培训效率、增加学员的体验感和学习兴趣,设计了一种基于VR技术的智能变电站混合巡检培训系统,通过SolidWorks和3D Max结合设备电气特点、动作特点以及物理特点共同构建变电站设备场景,采用3D Max软件创建三维虚拟变电站场景,便于学员在三维场景中漫游巡检。在实验中,通过变压器事故模拟实验,令学员真实体验事故场景,学习应对事故的操作及处理流程。实验结果表明,所提系统可迅速检测、记录变电站设备的异常和事故情况,检测内容较全面,且系统抗压性能较强,数据传输时滞少,巡检工作效率较高。     

基于物联网技术的智能变电站安防监控系统

通过在变电站内部部署相应的物联网感知设备,建立混杂条件下物联网的场景觉察机制,实现对变电站环境、基础设施、人员往来以及异常状况等方面的多因素、多维度的深度感知。同时,利用有线与无线融合的多态通信技术实现感知网络的互联互通,建立智能变电站安防监控系统。该系统能够对变电站内外环境进行立体式安全感知与监测,从而有效提升智能变电站的智能化监控水平,保障变电站安全稳定运行。     

基于SNMP的智能变电站物理光纤通讯链路检测方法

本文主要研究基于简单网络管理协议的智能变电站过程层通讯网络的检测方法。结合智能变电站交换机的运行状态信息,设计了智能站过程层网络状态监测系统,实现了对过程层物理光纤通讯链路实时运行状态的检测,该系统能够在提示组网运行状态的变化,使变电站运维人员及时发现并消除设备通讯故障,保障变电站的安全运行。     

智能变电站二次系统高可视化全景调测平台的设计

传统变电站中二次系统状态调测平台人机界面简单,为调测人员实时了解设备工作状态带来了困难,因此设计了智能变电站二次系统高可视化全景调测平台。采用智能移动终端实现二次系统的高可视化处理和分析,通过变状态信息数据实现设备状态的在线检测,及时分析系统中的设备状态和存在风险,平台综合考虑检修成本与效益设计设备检修方案,通过模糊数字的综合评估方法塑造设备状态评估模型,对状态以及设备健康进行综合评估,了解设备运行状态和发展态势。实验结果表明,该平台能够实现变电站二次设备状态、故障信息的直观显示以及有效调测。     

智能变电站间隔层设备仿真系统模块化设计与实现探讨

随着社会经济的发展,智能变电站在电力行业中得到了较为广泛的应用,智能变电站间隔层设备仿真系统模块化的设计,对于实现电能节约,促进变电站发展来说,具有十分重要的意义.本文对智能变电站间隔层仿真系统模块化设计与实现的探讨,主要研究了一种"ARM+DSP双CPU结构"的设计方案,该结构具有高效快速的处理能力,能够对电能输送进行有效的实施监控,满足供电的实际需要.该结构的研发,以变电站新型通信网络和系统协议IEC61850为基础,将其应用于变电站中,能够使智能变电站系统具有更好的拓展性能,更加适合于智能变电站自动化系统未来发展方向.     

智能变电站继电保护系统运行探讨

社会在越来越进步,在科技化的今天,智能变电站在整体新建电站中的比重也在逐步增加,适用范围也在扩大。但是,新的智能变电站要与很多智能单元和装置进行配合。导致其运行特性非常与众不同,在传统变电站中,继电保护相对较弱,而这在新型的智能变电站中可以得到有效改善,但是要求操作人员、检查修理人员能够充分掌握操作性能。这样才能让智能变电站的使用效果更为显著。在本文中,讨论了智能变电站的继电保护装置的工作方式,当变电站的工作范围扩大时,它也会继续扩大运行。介绍了关于智能变电站的继电保护设备的使用,让更多的人能理解它是如何工作的,它是如何服务的,以及当设备停止工作时,应当如何进行设备的维护。     

智能变电站继电保护跳闸实现方式研究

智能变电站是指使用环保、先进的集成智能设备,且站内达成信息共享标准化、通信平台网络化、信息数字化,能够自动完成信息的检测、计量及保护、控制、采集等功能,同时电网能够实时进行协同互动、在线决策分析、智能调节和自动化控制的变电站。变电站中的继电保护装置是决定整体变电站系统安全性的关键部分,跳闸是实现电站安全保护的重要方式,因此对智能变电站继电保护跳闸实现方式展开研究,以期为智能变电站的系统安全技术提供借鉴。     

智能变电站继电保护设备的运行和管理研究

随着当前社会经济的高速发展,电力领域已经逐步实现智能化和自动化,传统变电站逐渐被智能变电站所取代,并成为现代化电网中不可或缺的组成部分。而对智能变电站采取有效的运行维护技术以及故障管理方法,能够最大限度地保障电网运行安全。因此在当前电力系统工作中,相关人员需要充分掌握智能变电站继电保护设备的运行和管理技术,推动电力行业的向前发展。鉴于此,文章通过介绍智能变电站继电保护的结构,分析智能变电站继电保护当前存在的运行问题,提出有效的运行维护技术和管理方法,旨在为相关检修人员和管理人员提供借鉴和参考。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its