基于Labview的毁钥控制信号采集系统设计

设计可以实现毁钥控制信号输出电压检测的系统,检测系统由上位机、数据采集板卡、接口适配器等组成。上位机利用Labview软件开发毁钥控制信号采集软件程序,实时显示采集的电压波形及电压数值,利用数据采集板卡实现毁钥控制设备AIO端口,实现输出电压信号采集传输处理,利用接口适配器实现毁钥控制设备与板卡及上位机的接口匹配交联。通过该系统能够实时监测七路毁钥控制设备输出信号,及时发现故障通道,提高生产效率。     

基于LabVIEW与Matlab的实时在线光子多普勒测速系统

传统的光子多普勒测速系统中,速度信息的获得都采用离线处理,处理周期长,导致该传感系统不能实时应用。从光子多普勒速度测量系统的原理出发,结合LabVIEW的图形化语言设计和Matlab强大的数值处理能力,以数据采集卡和PC机为采集和处理平台,提出并设计了一种信号采集和处理系统,实现了测速信号的实时数据采集、在线处理和显示。     

基于PCL-1800和Labview的高速数据采集系统设计

文章介绍了以研华公司的PCL-1800数据采集卡和PC机为硬件,采用基于图形化虚拟仪器编程软件Labview的高速数据采集系统设计方案. 实验表明,该系统具有数据采集,实时波形显示,数据存储功能等功能,该虚拟仪器的精度和稳定性较高,反映灵敏,在测量过程中可以在线调整参数.并且介绍了Labview驱动函数的功能和使用方法.     

基于Labview的温度采集控制系统

以高速低功耗的STC89S52单片机和 DS18B20为硬件核心,用Labview2012作为上位机程序开发平台,设计出一个实时温度监控系统。这个系统由DS18B20采集周围环境温度,由单片机读取、处理数据并使处理过的数据在共阴极数码管上显示,同时单片机把处理过的数据通过RS-232通讯接口线传送给Labview进行分析处理,判断报警状态,实现上位机和下位机同时报警。     

实现Matlab定时处理功能

为实施诸如定时数据采集、数据处理、文件存盘等定时处理任务，以实现实时仿真和控制，程序必须能够完成定时和计时功能。介绍了优秀科学计算软件Matlab实现定时处理功能的几种方式，并着重给出了用C语言按照MEX格式编写动态链接库，在Matlab环境中使用系统定时器资源的方法。最后给出了定时采集某工业实际对象的温度，利用Matlab强大的数值计算与处理功能建立系统温度模型的应用实例。文中给出的方法可作为Matlab环境中编制数据采集与处理程序，以及开发Matlab与外部程序接口时参考。     

基于模斑干涉的光纤振动传感器学生实验平台的构建

本文介绍的是采用了SMS-A架构来实现基于模斑干涉的光纤振动传感器学生实验平台的构建,整个系统平台实现了远距离探测。系统中探测和传输都是使用光纤,能降低成本,简化系统设计;信号处理部分使用Labview语言开发的振动信号的时域和频域实时分析处理工具。并设计了一组实验对平台性能进行测试,对平台测试结果进行了分析。     

实时数据库在变电站智能热点监测系统中的应用

本文针对传统变电站智能热点监测系统存在数据采集实时性差,数据分析和报警等功能实现复杂等问题,提出采用实时数据库对现有系统进行改造.实时数据库的引入实现了变电站热点设备温度及环境温度数据的快速实时存储,智能分析处理以及多样化的外部展示功能,有利增强了变电站的安全生产管理.     

摩擦试验机数据采集与处理系统设计

基于摩擦试验机对计算机采集与处理数据功能的要求,采用串口通信方法,结合VB语言编程,设计了试验机的数据采集卡和数据处理系统。实验测试表明,该数据采集和处理系统能完成摩擦信号的实时动态采集、实时数据处理和数据动态显示。系统工作可靠,测试数据准确。     

光纤传感系统中APD增益温漂的动态补偿研究

为实现对雪崩光电二极管(APD)增益温漂的动态偏压补偿, 设计了高精度的ADC和DAC电路系统,对APD可以达到毫伏级的偏压控制精度和0.2 ℃的温度采样精度.依托光纤传感系统并运用数据采集与处理技术获得了在APD增益比较稳定的条件下其偏压与温度之间的线性关系以及增益温漂误差的偏压补偿公式,应用时传感系统能够实时补偿增益的温漂并且具有足以满足系统要求的补偿精度.     

基于激光吸收光谱技术在线测量燃烧场温度研究

燃烧场温度的测量对研究燃烧机理、提高燃烧效率、降低污染物排放等至关重要。利用水在1397.75 nm和1397.87 nm处两条邻近的吸收线,采用波长扫描直接吸收法实现了单台二极管激光器对标定燃烧炉甲烷/空气预混火焰温度的测量。并利用基于Labview语言的数据采集卡对信号进行采集和实时处理,从而能够实时在线地获得测量结果,在温度1750 K时标准测量不确定度为2.3%。分析了火焰边界层对测量结果的影响,结果表明燃烧场非均匀性对路径积分测量结果影响较大,且其测量结果不是路径积分算术平均值。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-