低温烧结YIG多晶铁氧体的研究现状

综述了目前YIG(Y3Fe5O12)多晶铁氧体材料在低温烧结方面的研究现状。总结了Cu、Ca、V、Bi等离子取代及TiO2、B2O3添加剂对YIG显微结构及磁性能的影响,探讨了用sol-gel法、共沉淀法及机械化学法制备的YIG超细粉料在低温烧结中的作用以及新型烧结工艺的应用。阐述了其未来的研究方向。     

溶胶 凝胶法制备Sr2+取代Co2Z及性能研究

为了制备性能优良的Sr2+掺杂的Co2Z型六角钡铁氧体（Ba1.5Sr1.5Co2Fe24O41）,利用溶胶 凝胶自蔓延法,通过改变烧结温度制备了Co2Z钡铁氧体粉末,对其相成分、微观形貌和磁性能进行了研究。结果表明,采用溶胶 凝胶自蔓延法在1 200 ℃烧结时可制备较纯的Co2Z相,此时材料杂相最少,晶粒生长均匀,结构致密,起始磁导率为3.3,截止频率大于1.8 GHz,品质因数Q在1 GHz时为3.6。     

CaCO_3-SiO_2复合添加剂对锶铁氧体磁性能的影响

采用微量CaCO3-SiO2添加剂和Y30锶铁氧体预烧料,通过研磨湿法磁场成型烧结工艺,研究了微量添加剂对Y30锶铁氧体磁性能的影响。研究结果发现:Y30锶铁氧体的磁性能随添加剂量的增加而逐渐改善,达到一最佳值后又逐渐下降,其最佳磁性能达到日本FB5B牌号水平;采用纳米CaCO3-SiO2能扩大最佳磁性能所需添加剂的添加量范围,有利于大生产时锶铁氧体磁性能的稳定,对生产有重要的指导意义。     

石榴石型微波铁氧体材料的研究进展

石榴石型铁氧体材料R3Fe5O12(R=Y,Gd)是微波技术中一种重要的功能材料。综述了高性能石榴石型铁氧体、石榴石型铁氧体材料的制备工艺和低温烧结石榴石型铁氧体等方面的研究进展,归纳了研究中存在的问题,同时对其未来的发展趋势做了展望。     

B2O3掺杂Co2Z的低温烧结及磁性能研究

以掺杂B2O3与Cu2 取代相结合对Co2Z型高频软磁铁氧体材料的低温烧结规律进行了研究,并分析了掺杂B2O3降低Co2Z烧结温度及对磁性能影响的机理。研究表明,B2O3掺杂引起Co2Z型铁氧体材料中Z相向M相转化,且随着B2O3掺杂量的增大M相增多,磁导率减小。掺杂B2O3与Cu2 取代显著地降低了Co2Z陶瓷的烧结温度。950℃烧结时,其体积密度为5.02 g/cm3,相对密度为94%,起始磁导率为2.5,是制造高频多层片式电感器的理想介质材料。     

Bi_2O_3-MgO掺杂对Z型六方铁氧体电磁性能的影响

采用固相反应法,制备了Ba3(Co0.4Zn0.6)2Fe24O4Z型六方铁氧体。研究了Bi2O3-MgO复合掺杂对低温烧结Ba3(Co0.4Zn0.6)2Fe24O4Z型六方铁氧体的显微结构和电磁性能的影响。结果表明:在固定w(Bi2O3)为3.0%的基础上,当掺入的w(MgO)为0.6%时,此Z型六方铁氧体可在900℃下低温烧结,高频电磁性能得到了显著的提高,材料在300MHz时的磁品质因数Q值从7.1提高到14.5,εr和tanδ分别从16.0和0.04100降低到10.8和0.00355,有望成为高频片式电感用材料。     

磁性材料专题

题目：预烧和烧结温度对Ba3Co0.8Zn1.2Fe24O41铁氧体电磁性能的影响 作者：邓平锋、何欢、贾利军、张怀武 摘要：采用固相反应法制备了Z型六角铁氧体（Ba3Co0.8Zn1.2Fe24O41）。研究了预烧和烧结温度对材料电磁性能的影响。结果表明,随着预烧温度的升高磁导率先增大后减小（Tp=1250℃时为峰值）,介电常数增大,     

C0-Ti替代钡铁氧体的高频磁性研究

用化学共沉淀工艺制备了Co—Ti替代系列钡铁氧体磁粉及烧结磁体，结合相结构、显微形貌分析和对材料磁化机理的讨论，该文主要研究了替代量和烧结温度对钡铁氧体高频磁性的影响。实验表明，初始磁导率和共振频率随替代量的变化存在极值，当Co—Ti替代量为1．0时钡铁氧体具有较高的磁导率和较低的磁共振频率，偏离1．0均导致磁导率的降低和磁共振频率的升高；高烧结温度导致晶粒尺寸的长大和品格结构的完善，有利于提高材料的磁导率，同时降低了磁共振频率。     

高性能功率铁氧体材料的配方与烧结工艺

根据高频开关电源变压器对高性能功率铁氧体材料的要求,分析研究了主配方、微量添加物和烧结工艺对铁氧体材料的高起始磁导率(μi)、饱和磁通密度(Bs)、低功率损耗(Pc)等特性的影响,得出:通过采取优选主结构原材料配比、掺入适量的CaO、SiO2、TiO2、Co2O3等添加物,并与烧结工艺相匹配等措施,即可制得PC44、PC50等高性能功率铁氧体材料。     

利用微波烧结方法制备锶铁氧体永磁材料的研究

利用微波烧结工艺制备M型锶铁氧体永磁材料,对微波烧结温度条件进行探索.试验结果表明:微波烧结工艺可以成功地制备M型锶铁氧体永磁材料,并且,微波烧结工艺制备的锶铁氧体的磁性能基本都可以达到日本TDK公司的FB6系列.同时,选择合适的烧结温度有利于提高锶铁氧体的磁性能和视密度.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its