基于扩展目标的单脉冲多普勒雷达导引头相干干扰

传统两点源相干干扰是基于质点模型产生与回波相位相干的干扰信号, 相应地用于验证干扰效果的导引头仿真平台往往仅进行功能级仿真.然而, 当被掩护目标为扩展目标时, 利用质点模型无法产生与目标回波相干的信号导致干扰效果下降.针对该问题, 研究了基于扩展目标的相干干扰新方法, 基于被掩护目标电磁散射特性将入射信号与同频点相应姿态角下的目标散射函数进行卷积, 充分保留目标特性对信号相位的调制信息, 从而产生与扩展目标回波具有稳定相位关系的干扰信号.设计了脉冲多普勒(Pulse Doppler, PD)雷达导引头相干视频仿真模型及六自由度弹道模型, 以完成精确的闭环仿真试验评估.试验结果表明, 通过目标距离像特性近似目标散射函数来生成PD导引头相干干扰信号时, 角度诱偏效果相比传统干扰大幅度提高, 方位、俯仰的框架误差角可达到十度的量级.     

基于并行PO/EEC的ISAR回波生成与成像仿真

为了满足基于模板的逆合成孔径雷达（ISAR）目标识别对海量高分辨模板图像的工程需求,提出了一种基于并行电磁散射特性计算技术的ISAR图像信号级仿真方法。首先,以OpenMP技术为基础采用并行物理光学和等效边缘电磁流对目标的电磁散射特性进行快速计算;其次,以步进频率波形为雷达发射波形结合目标的电磁散射特性生成了宽带雷达回波数据;最后,对使用距离多普勒算法对仿真回波数据进行处理生成ISAR像,并与点阵模型成像结果进行了对比分析。实现了对ISAR图像的信号级快速仿真,对ISAR系统设计与验证、ISAR图像解译和目标识别以及ISAR成像处理等具有重要意义。     

基于瞬时频率估计的进动锥体目标微多普勒频率提取方法

该文针对进动锥体目标的微动特性提取,建立等效散射点模型下的微多普勒频率与目标运动参数关系。结合进动调制的微多普勒频率近似正弦变化规律的特点,提出基于瞬时频率估计和随机抽样一致性(RANSAC)的进动目标微多普勒频率提取方法。该方法将回波信号分为若干段,每一段的回波信号近似为若干线性调频(LFM)信号分量之和,通过调频Relax算法估计各信号分量的瞬时频率,并通过随机抽样一致性算法估计散射点的微多普勒曲线。基于仿真数据和电磁计算数据的实验验证了该方法的有效性及稳健性。     

基于电磁计算的三维模型SAR回波仿真

SAR回波信号模拟具有广泛的应用背景,传统回波信号仿真方法使用SAR或光学图像作为后向散射系数,将仿真场景/目标看成孤立的散射单元而忽略了电磁波的多次散射,不能精确地仿真场景/目标的电磁特性。文中利用三维建模技术对SAR目标精确建模,采用电磁计算中的弹跳射线法更加精确地计算三维模型的电磁散射特性,然后利用距离频域脉冲相干(RFPC)法仿真SAR回波信号。最后,通过点目标与坦克的仿真及成像,验证了该方法的合理性与可行性。     

基于参数化时频分析的进动锥裙目标瞬时微多普勒频率提取方法

微动目标散射点的微多普勒对目标运动、结构参数的估计具有重要意义。该文针对表面光滑的锥裙目标,首先依据进动锥裙目标的等效散射点模型,推导出散射点的理论微多普勒曲线表达式。结合进动调制的锥裙目标微多普勒曲线为多阶正弦级数叠加的先验信息,提出一种基于参数化时频分析的进动锥裙目标微多普勒曲线提取方法。针对多分量信号组成的锥裙目标回波,该方法利用相干信号单距离多普勒干涉(CSRDI)方法估计锥旋频率,进而利用参数化时频分析估计散射点的微多普勒曲线,之后利用带阻滤波器分离估计得到的散射点回波信号。基于电磁仿真数据验证了所提方法的有效性。     

基于场景定义的弹道目标雷达回波仿真方法

回波仿真是开展系统论证和算法研究的基础。传统的弹道目标雷达回波仿真研究侧重对弹道目标和干扰信号各自特性的建模,缺乏系统级联合仿真途径。文中介绍了一种基于场景定义的弹道目标动态雷达回波仿真方法。该方法基于统一的人工场景定义平台,结合弹道轨道运动模型、摆动模型和电磁干扰模型,模拟产生高逼真度的摆动弹道目标雷达回波。该方法还可灵活接入暗室或靶场实测的目标雷达散射截面数据和干扰样本数据,为复杂电磁环境下的导弹目标探测和识别算法研究提供数据支撑。     

基于一维距离像的飞机目标识别

针对基于多散射中心模型回波的一维距离像(High Resolution Range Profile, HRRP)难以真实反映复杂目标散射特性的问题,研究了基于电磁散射模型回波的生成方法和HRRP 宽带特征提取方法。首先应用等效电磁流法(Method of Equivalent Currents, MEC)棱边修正的物理光学(Physical Optics, PO)算法解算飞机目标动静态电磁散射特性;其次基于目标散射场数据,生成目标回波、仿真HRRP 序列,提取目标宽带特征信息;最后求解了目标在设定航迹下的平均识别率,量化分析了信噪比对目标识别率的影响。理论分析与仿真结果表明:当信噪比(Signal to Noise Ratio, SNR)大于5 dB 时,基于电磁散射建模的平均识别率相对基于传统的多散射中心模型提升了20%。     

基于正向建模的目标超宽带电磁脉冲雷达回波仿真

为了快速获取超宽带（ultra-wideband,UWB）电磁脉冲激励下雷达目标的时域电磁响应,提出了一种基于散射中心正向建模的目标时域回波仿真方法.从目标几何模型出发,利用空间射线分集技术对强散射源进行分离,通过模型参数正向确定方法构建出目标的属性散射中心模型,用以表征目标高频电磁散射特性,并在UWB电磁脉冲激励下进行仿真运算,获得目标时域回波信号.以典型目标SLICY为例,基于正向建模的散射中心模型,快速获取不同UWB电磁脉冲激励下的雷达回波信号,与高频仿真方法得到的一维距离像（high resolution radar profile,HRRP）进行对比分析,吻合良好.由此验证了本文提出的回波仿真方法的有效性,为不同辐射源激励下目标的快速电磁响应研究提供了一种新思路.     

弹道中段带翼弹头章动微多普勒特性研究

文中建立了带翼锥体弹头章动数学模型,分析了章动参数对目标姿态角的影响,推导了带翼弹头固定型和滑动型点散射中心的章动微多普勒理论公式,并对其进行了时频分析。基于电磁计算软件获取的目标静态电磁散射数据,结合目标运动模型合成了带翼弹头的雷达动态回波,进而获得其章动微多普勒的电磁仿真结果,验证了章动微多普勒理论公式的正确性,并给出了重要结论。     

基于GRECO的复杂目标ISAR图像仿真

提出一种与图形电磁计算方法相结合的1SAR图像实时仿真方法.利用图形电磁计算(GRECO)方法得到运动目标的电磁散射数据,通过发射线性调频信号得到运动目标的雷达回波,并对仿真回波进行ISAR成像处理.与传统采用点目标仿真不同,该文是对实际三维目标直接仿真成像,更加接近实际,更加适合应用与成像效果分析、算法改进和抗干扰方面的研究.对于目标表面散射场的分析,是基于高频预估理论:采用物理光学(PO)法与物理绕射理论(PTD)来进行计算.从对复杂目标的仿真结果来看,该方法是准确有效且具有实时性的.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its