一种新型圆极化可重构天线

本文利用最大功率传输效率法(MMPTE),通过4个相同左旋圆极化贴片单元作为子阵来实现阵列天线圆极化可重构。通过在被设计阵列(作为发射阵列)远场区引入极化控制接收天线,可以将整个收发系统看作一个无线功率传输系统,这样就可以把阵列天线的设计问题转换为一个天线之间的传输效率最优化的问题。通过调节接收天线的极化方式和接收位置,可控制被设计阵列的极化方式和扫描角度。与传统做法不同的是,被设计阵列单元的极化方式确定时,通过改变接收天线的极化方式,阵列还能产生与单元极化相反的极化方式,同时两种极化方式所得的增益差距在1dBi以内。本文以中心频率在2.45GHz的左旋圆极化单元组成的十六单元阵列为例,说明如何实现阵列左右旋极化的可重构以及+/-60°的扫描功能。     

基于最大功率传输效率法的聚焦天线设计北大核心CSCD

采用传统方法设计天线时，往往存在能量转换效率较低、能量浪费严重的问题，但大部分优化方法又都有操作过于复杂的缺陷。本文提出了一种采用最大功率传输效率（MMPTE）方法设计的毫米波微带天线阵列。该天线由4×4个矩形贴片辐射单元和微带线馈电网络组成，并通过MMPTE来优化天线馈电网络的相位和幅度。本文所设计的天线阵列具有结构简易、辐射效率高、成本低廉、体积较小、性能良好等优点，可根据需求应用于不同的Ka波段毫米波天线系统。     

基于最大效率传输算法的多波束阵列天线北大核心CSCD

应用传统优化馈电幅值相位的方法来设计多波束阵列天线时，计算量与过程比较复杂，采用一些优化算法也往往只能得到局部最优解。而基于最大功率传输效率法(MMPTE)对天线阵列进行优化，可以得到理论上最优的天线单元馈电的幅值和相位。本文首先介绍了最大功率传输效率法，然后设计了微波多波束阵列天线，采用MMPTE对其进行优化。仿真结果验证了最大功率传输效率法在设计微波多波束阵列时具有良好的优化效果。     

基于最大功率传输效率法的近场三维方向图赋形

讨论如何利用带约束的最大功率传输效率(CMMPTE)法通过阵列天线来综合三维方向图。通过引入测试接收阵列天线,待设计的阵列天线与之构成无线功率传输(WPT)系统,从而将方向图的综合问题转换成WPT系统功率传输效率(PTE)的优化问题。通过调整约束条件,在保证PTE最大化的条件下可获得阵列天线的激励分布,根据激励分布设计馈电网络实现近远场方向图的赋形。作为例子,设计了中心频率为2.45 GHz的赋形天线阵列,该阵列由48个微带天线单元组成,排成六棱柱形状,并在棱柱内部实现了三维圆柱形的电场赋形。     

三端口宽带极化可重构紧耦合天线阵列

提出了一种三端口宽带极化可重构紧耦合天线阵列。该阵列单元由蝶形偶极子、阻抗变换器和巴伦组成,通过最大功率传输效率法(MMPTE)优化出天线三个端口的所需最优激励分布,从而实现天线在左旋圆极化(LHCP)和右旋圆极化(RHCP)以及在方位角平面任意角度线极化(LP)多种辐射模式之间的切换。最终优化得到的阵列的尺寸为π×60² mm²×30 mm(π×0.7²×0.35λ₀³=0.549λ₀³,其中λ₀为中心频率处的自由空间波长)。测试结果表明,该阵列在左右旋圆极化和线极化状态下的相对阻抗带宽(|S₁₁|<-10 dB)都为50.7%,且3 dB增益带宽基本能覆盖阻抗带宽。左右旋圆极化轴比小于3 dB,并且轴比带宽(AR<3 dB)可以覆盖整个阻抗带宽。在3.5 GHz处,阵列在各种极化状态下的最大实际增益均大于8.8 dBi。     

用单极子阵列天线实现近场区电磁场调控

为了实现对阵列天线内部近场区域电磁场的控制,设计制作了一款工作频率为2.45GHz的低成本环形印刷单极子阵列天线。通过在需要加强电磁场预先设置的特定曲线上排布辅助偶极子天线阵列,利用两个阵列之间的功率传输效率最大化理论,得到印刷单极子天线阵列所需的最优化激励分布。基于上述方法,阵列天线近场区域的电磁场可以被调控成由预置曲线指定的任意不同形状。验证了电磁场分别被赋形为正方形、圆形和L形时的3种情况。     

微波输能应用中整流天线阵列接收效率的研究

整流天线阵列是微波无线能量传输系统的重要组成部分,其接收和转换效率关系到能量无线传输的成败。在5.8 GHz频段采用矩形、圆形和三角形3种微带贴片单元,分别以发射天线阵列最大口径效率和接收天线阵列最高接收效率为目标进行优化,仿真计算了各天线阵列对空间电磁来波的接收效率。结果表明,天线单元形状会影响整流天线阵列的接收效率,相对于按发射天线阵列最大口径效率设计,以最高接收效率优化排布的整流天线阵列,对空间电磁来波的接收效果较好。     

任意极化波的功率传输效率计算及其对天线测量精度的影响

在测量圆极化天线辐射特性时，无论采用何种极化的测试信标天线，都会存在极化损失，即功率传输效率小于1，由此引入的测量误差是信标天线及待测天线极化特性的函数，因此需要对测量数据进行误差分析以及适当的修正。本文导出了任意两个椭圆极化波在一般情况下功率失配因子随轴比γ和轴倾角τ变化的计算公式，对工程中常见的几种情况进行了定量分析计算，讨论了功率失配校正因子的取值范围，以及对天线辐射特性测量精度的影响。     

一种双极化液晶阵列天线设计与方向图综合方法

针对极化相控阵雷达应用背景,提出了一种基于电磁调控液晶的二维方向图可重构双正交极化阵列天线设计方法.该阵列天线设计由两种极化方式的亚波长超表面天线线阵交替排列构成,线阵上的单元均有两种工作状态,且每个单元都可以独立控制.该天线在一个方向维度上利用液晶超材料结构的电磁调控能力采用全息方向图综合方法实现了两个极化方式的独立调控,另一个方向维度上采用外部移相器对两个极化方式进行分别调控,创新地在两个方向维度上分别实现了正交极化信号的同时方向图重构,并确保了正交极化在二维方向图重构的一致性和良好的隔离度.仿真结果表明在法线两个正交极化的主瓣电平差小于0.01 dB,波束指向角为-40°时两个正交极化的的主瓣电平差小于0.02 dB.文章提出的双极化液晶阵列天线设计和方向图综合方法具有正交极化一致性好、结构简单等特点,并具有低功耗、低损耗、低成本制造、轻薄等优点,为小型全极化相控阵雷达精确信号制导应用提供了一个新颖的设计方案.     

任意极化波的传输效率对天线测量的影响

在测量圆极化天线辐射特性时,无论采用何种极化的测试信标天线,都会存在极化损失,即功率传输效率小于1,由此引入的测量误差是信标天线及待测天线极化特性的函数,因此需要对测量数据进行误差分析以及适当的修正。文中导出了任意两个椭圆极化波在一般情况下功率失配因子随轴比y和轴倾角r变化的计算公式,对工程中常见的几种情况进行了定量分析计算,讨论了功率失配校正因子的取值范围,以及对天线辐射特性测量精度的影响。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-