低损耗、低介电常数的介质测量——短路波导法

介质材料的相对复介电常数可以用ε_r=ε(1-jtgδ)表示,式中ε为相对介电常数,tgδ为损耗角正切.我们在日常科研和生产中经常用到某些陶瓷、塑料或玻璃钢等介质材料,它们的相对介电常数小于10,损耗角正切小于0.1,可以称之为低介电常数、低损耗介质     

C—F型物理发泡聚乙烯绝缘同轴电缆的衰减设计计算

介绍了在Ｃ－Ｆ型物理发泡聚乙烯绝缘同轴电缆的衰减设计计算中，如何合理选择等效介电常数εｒ，等效介质损耗角正切ｔｇδｒ、外导体的材料系数ｋρ等参数。     

电介质复介电常数的教学和实验

本文从时谐电磁场情况下电介质的电极化物理过程出发,通过理论推导建立了介质损耗与复介电常数的关系。在此基础上,以电容器为例得到了时谐情况下的等效电路,进一步得到电容器中电介质的复介电常数实部和虚部与频率的关系,并通过指导本科生测量电介质介质损耗角正切得到复介电常数的频率特性。     

毫米波损耗角正切的测量

本文介绍微波材料毫米波复介电常数和损耗角正切的简易测量方法 ,重新推导有关公式 ,给出测试步骤、计算步骤 ,并给出测试实例。     

毫米波损耗角正切的测量

本文介绍微波材料毫米波复介电常数和损耗角正切的简易测量方法，重新推导有关公式，给出测试步骤、计算步骤，并给出测试实例。     

平板介质的微波分裂腔法介电常数测试技术

为实现微波频段平板类介质材料的介电常数的无损测试,研究了分裂式圆柱形谐振腔测试方法。介绍了分裂式圆柱形谐振腔的电磁场分析理论,采用模式匹配技术实现了介质加载条件下腔内电磁场分布的精确求解,得到了腔体谐振频率与材料介电常数之间的准确关系。在理论分析的基础上,制作了空腔谐振频率为10 GHz的分裂式谐振腔,并与前期研制的闭式谐振腔进行对比测试,介电常数实部测量结果相对误差小于1%。与国外同类产品进行对比测试,介电常数实部结果基本一致,损耗角正切测量结果更接近于文献参考值。因此,微波分裂腔法能够实现平板介质板材的无损测量,具有准确度高,使用方便等突出优势,可在微波频段内实现介电常数为1～20,损耗角正切为1×10^-3～1×10^-5,板材厚度为0.1～2.0 mm的各类平板介质材料介电常数的准确测试。     

倾斜角对蜂窝结构等效介电常数影响分析

基于各向异性介质波阻抗理论,提取了蜂窝结构等效电磁参数,分析了蜂窝倾斜角对蜂窝结构等效介电常数的影响。分析表明,在倾斜角较小时,横向等效介电常数近似为各向同性。等效介电常数张量元素随倾斜角度变化规律不同。对于无耗蜂窝,随着倾斜角度增大,横向等效介电常数增大,纵向等效介电常数减小,蜂窝谐振频率向低频移动。对于有耗蜂窝,介电常数变化规律与无耗蜂窝中类似。     

纵孔聚乙烯电缆绝缘结构的设计与计算

本文对纵孔聚乙烯绝缘同轴电缆的绝缘结构进行了具体分析,提出了绝缘截面尺寸的设计原则,同时对绝缘的等效介电常数与等效介质损耗角正切提出了相应的计算式,可供设计使用。     

用H01型圆柱谐振腔测量介质材料介电常数的原理及方法

讨论H01型圆柱谐振腔的测试原理;详细介绍了用圆柱谐振腔测量介质材料相对介电常数及损耗角正切的方法.     

一种壁厚渐变蜂窝宽带透波结构*

采用介电常数渐变结构是一种有效实现宽带透波的方法。为实现介电常数随厚度变化,本文提出了 一种壁厚渐变六边形蜂窝结构。根据蜂窝等效介电常数的近似计算公式和介质介电常数变化分布,计算出该渐变 结构的几何参数。基于渐变线宽带匹配理论,对空气和高介电常数介质进行宽带匹配设计,从而得到介质介电常数 随厚度渐变的分布规律。为验证该设计方法的有效性,采用CST 商用仿真软件,对该结构的周期单元透波性能进行 仿真。仿真结果表明该结构在垂直入射和大入射角情况下,具有良好的宽带透波特性。通过改变芯层材料厚度可 以进一步调整宽带透波特性的起始频率。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-