硅化铱肖特基势垒列阵—实现长波红外成像的新途径

硅化铱肖特基势垒列阵,是一种新近发展起来的用于长波红外(8～14μm)成像的焦平面技术。本文叙述了硅化铱肖特基势垒列阵的工作原理、结构及关键工艺,并介绍了该器件的发展状况。     

扩展长波红外探测的铱硅化物硅肖特基势垒的研究

通过制备铱硅化物—硅肖特基势垒,分析了衍射相,讨论了铱硅化物成膜工艺及其与薄膜方块电阻的关系,测量并分析了势垒高度,红外光吸收率。研究结果表明,铱硅化物—硅是一种有希望扩展肖特基势垒红外探测范围的新型势垒结构。     

价格昂贵的铂检测器

作为具有使用潜力的红外检测器，硅化铂肖特基势垒检测器几年来一直在接受试验。在美国摄影光学仪器工程师学会东部会议上，美国无线电公司普林斯顿实验室的科索诺基(W. Kosonochy)论述了64×128 PtSi肖特基势垒红外电荷耦合器件(CCD)焦平面列阵的现状。     

铂—硅合金形成硅化铂的研究

本文对 PtSi 红外肖特基势垒探测器中硅化铂薄层(～20nm)进行了分析,比较了不同制作条件 PtSi 薄层的化学组成以及有关元素在薄层中的纵向分布等情况,提出了良好的硅化铂薄层的形成条件,并测出了以此条件制作的 PtSi 红外肖特基势垒探测器参数 D~*=2.8×10~(10)cm·H_z~(1/2)W~(-1),势垒高度φ_(ms)=0.21eV。     

硅化铂肖特基势垒红外电荷耦合器件的研制技术

本文仅对硅化铂肖特基势垒红外电荷耦合器件(PtSi-SBIRCCD)的结构、工艺及提高性能的途径作一综合描述。     

硅化铂肖特基势垒红外电荷耦合器件焦平面阵列的噪声分析

本文主要分析硅电荷耦合器件(Si-CCD)和硅化铂肖特基势垒红外电荷耦合器件(PtSi-SBIR CCD)的噪声产生原因以及降低噪声的方法。     

硅化钯-P型硅肖特基势垒二极管的红外响应

硅化钯-P型硅肖特基势垒二极管是短波红外CCD和焦平面的光敏元,利用成熟的硅大规模集成电路工艺可以把它和信息处理电路做在同一芯片上,因此,易于做成高密度多象元的器件。近几年来,这种器件发展很快,性能有很大的提高。目前,人们正在发展长波硅肖特基势垒红外CCD,因此,对硅肖特基势垒二极管的光谱响应十分关注。本文对硅化     

军用PtSi—SBIRFPA的新发展

概述了军用热成象系统中硅化铂肖特基势垒红外焦平面是技术的新发展。     

用于红外探测的铱硅化物的X射线光电子能谱

用Ｘ射线光电子能谱方法测量了铱硅化物的芯能级谱。得到了与化学键有关的化学多和芯能级对称性变化方面的信息，提出了在ＩｒＳｉ／Ｓｉ肖特基势垒形成机理与界面外ＩｒＳｉ和Ｓｉ原子的化学键密切相关本文结果有益于解用铱硅化物肖特基势垒制备红外探测器。     

军用PtSi-SBIRFPA的新发展

概述了军用热成象系统中硅化铂肖特基势垒红外焦平面阵列（ＰｔＳｉ－ＳＢＩＲＦＰＡ）技术的新发展。     

单片式红外焦平面阵列的进展

本文着重介绍金属硅化物肖特基势垒红外探测器阵列（MSSBIRDA），碲汞电荷注入器件（HgCdTeCID)，电荷成像矩阵（CIM），锑化铟电荷注入器件（InSbCID)以及砷化镓／砷铝镓（GaAs/GaAlAs)多量子阱单片式红外焦平面阵列的现状。     

硅基红外焦平面阵列技术的新进展(Ⅰ)

主要介绍以硅为衬底的非本征硅、金属硅化物（Ｐｄ２Ｓｉ，ＰｔＳｉ和ＩｒＳｉ）肖特基势垒红外探测器、ＧｅｘＳｉ１－ｘ／Ｓｉ异质结内光电发射红外探测器、硅基红外图象传感器、硅微测辐射热计等红外探测器焦平面阵列的新进展     

Doping-spike PtSi Schottky infrared detectors with extended cutoffwavelengths

A technique incorporating a p⁺ doping spike at the silicide/Si interface to reduce the effective Schottky barrier of the silicide infrared detectors and thus extend the cutoff wavelength has been developed. In contrast to previous approaches which relied on the tunneling effect, this approach utilizes a thinner doping spike (<2 nm) to take advantage of the strong Schottky image force near the silicide/Si interface and thus avoid the tunneling effect. The critical thickness, i.e., the maximum spike thickness without the tunneling effect has been determined and the extended cutoff wavelengths have been observed for the doping-spike PtSi Schottky infrared detectors. Thermionic-emission-limited and thermally assisted tunneling dark current characteristics were observed for detectors with spikes thinner and thicker than the critical thickness, respectively     

Full Schottky high density 2-D infrared charge coupled detector array

Conventional silicon based infrared (IR) detector arrays consist of separate Schottky barrier detectors connected via transfer gates to MOS type charge coupled device (CCD) read-out shift registers. A novel IR imaging array is described where Scottky silicide elements are used exclusively both as IR detectors as well as the silicide gates of Schottky CCD read-out shift registers. Advantages of the novel structure are a high packing density of IR detectors with high fill factor, simplicity of the device layout and possible high fabrication yield.     

硅化铂红外焦平面探测器性能改进技术分析

硅化铂红外焦平面探测器具有响应光谱宽、规模大、均匀性好、时间稳定性高、制造成本低等优点,在多/宽光谱成像、激光探测、天文观测、医疗检测等领域具有应用潜力,但NETD 100 mK 的灵敏度对其广泛应用有一定的限制。文中从该探测器的量子效率和填充因子两方面总结和分析了国内外的改进技术,重点分析了光腔结构、多孔硅结构、重掺杂P+和合适硅化铂膜厚提高量子效率的机理,并定量比较了提升幅度:多孔硅结构提升幅度最大,在波长4 m 处的量子效率可达27%;相比内线转移CCD,电荷扫描器件、曲流沟道CCD 和混合读出结构均能改善填充因子,其中混合读出结构的填充因子可提高为80%。微透镜列阵能将填充因子提高到85%以上。     

微波肖特基势垒二极管硅化物工艺技术研究

对微波肖特基中、低势垒二极管硅化物的工艺技术进行了研究。用Ｎｉ－Ｓｉ硅化物作中势垒硅化物,用Ｔｉ－Ｓｉ硅化物作低势垒硅化物。通过设计和工艺实验,得到温度、时间、真空度等取佳工艺技术条件。在保持微波肖特基二极管势垒特征的同时,提高了反向电压,增强了它的稳定性和可靠性。     

Silicide/strained Si1-xGex Schottky-barrierinfrared detectors

By employing a thin silicon sacrificial cap layer for silicide formation, the authors successfully demonstrated Pd₂Si/strained Si_1-xGe_x Schottky-barrier infrared detectors with extended cutoff wavelengths. The sacrificial silicon eliminates the segregation effects and Fermi level pinning which occur if the metal reacts directly with Si_1-x Ge_x alloy. The Schottky barrier height of the silicide/strained Si_1-xGe_x detector decreases with increasing Ge fraction, allowing for tuning of the detector's cutoff wavelength. The cutoff wavelength was extended beyond 8 μm in PtSi/Si _0.85Ge_0.15 detectors. It is shown that high quantum efficiency and near-ideal dark current can be obtained from these detectors     

A Bondable Metallization Stack That Prevents Diffusion of Oxygen and Gold into Monolithically Integrated Circuits Operating Above 500°C

We investigate use of tantalum silicide (TaSi₂, 400 nm)/platinum (Pt, 200 nm)/iridium (Ir, 200 nm)/platinum (Pt, 200 nm) as both a bond metal and a diffusion barrier to prevent oxygen (from air) and gold (from the wire bond) from infiltrating silicon carbide (SiC) monolithically integrated circuits operating above 500°C for over 1000 h in air. The TaSi₂/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. It can be used directly on ohmic contact metals, dielectric insulating layers, or interconnect metal, because it adheres to silicon dioxide (SiO₂), silicon nitride (Si₃N₄), and titanium (Ti). In this study, we investigate use of the new metallization of TaSi₂/Pt/Ir/Pt (in deposition order) with TaSi₂ resting on top of a Ti-SiC contact annealed at 600°C for 30 min in nitrogen, which allows the TaSi₂ layer to react with the bottom platinum layer to form the Pt₂Si diffusion barrier at the Pt-Ir interface. Since the iridium layer does not readily form a silicide, it prevents the silicon from migrating into the topmost platinum layer during further annealing or high-temperature integrated circuit operation. This leaves a pure platinum layer at the surface, ideal for gold wire bonding. We discuss the characteristics of the TaSi₂/Pt/Ir/Pt metallization at 500°C after 10 h, 100 h, and 1000 h in air ambient and N₂ ambient. Auger electron spectroscopy (AES) depth profiles of the metallization and field-emission scanning electron microscopy-focused ion beam (FESEM-FIB) cross-sections are also discussed.