部分相干方形平顶电磁脉冲光束经相位调制透镜的聚焦特性

将稳态场的相干偏振统一理论应用于脉冲光束的研究。构建了部分相干方形平顶电磁脉冲光束,并推导出该光束经相位调制透镜后聚焦的交叉谱密度函数表达式。详细探讨了相位调制尺寸、调制深度、调制中心位置以及光束相关长度等对聚焦场光谱强度的影响。研究结果表明,局域相位调制会导致在聚焦场中产生另一光谱强度峰值,光束的相关参数和相位调制参数决定该光谱强度峰值大小,并在一定情况下使之发生移动。特别是当光源相关参数和相位调制参数处于某临界值时,会发生光谱强度峰值开关现象。同时发现,空间相关长度导致光束发生空间焦移,而脉冲时间相关长度导致光谱强度峰值在频率上的移动。     

涡旋相位编码的径向矢量光束的紧聚焦特性

为了研究涡旋相位编码的径向矢量高斯光束经过高数值孔径物镜之后的聚焦特性,采用RICHARDS和WOLF提出的矢量积分理论和数值模拟方法,对聚焦场的特征进行了理论分析和模拟实验验证,取得聚焦场分布随涡旋相位物理参量之间的数据关系。结果表明,当单个涡旋相位编码于径向矢量高斯光束时,在聚焦场能够获得2维的径向和纵向分量;当双涡旋相位对称地编码于径向高斯矢量光束时,聚焦场会出现两个光学暗点,此光学暗点处的折射率低于周围环境的折射率。这一结果对提高光学微操控的灵活性,以及对双微粒的捕获与操控是有帮助的。     

新型高功率激光加工用激光光束展宽方法的探索性研究

探索性地提出了一种基于新型扇形类抛物面聚焦镜的高功率激光加工用激光光束的展宽方法,并对该方法的实现原理和光路设计进行了研究与相关实验验证。根据几何光学原理,采用光线追迹的方法,对实际激光光束经新型光束展宽系统变换后的聚焦特性进行了分析。理论结果表明,通过光束展宽系统变换后,能够将原始圆形激光束连续扫描展宽为光强分布均匀的大尺寸(20~500 mm)弧形条状聚焦光斑。利用横流CO2激光器,对该光束展宽系统的实际光学变换特性进行了初步实验研究,实验结果与理论结果相符合。     

选区激光熔化中激光束的传输变换及聚焦特性

为了获得光束质量较好、光斑尺寸较小、功率密度较高的、适合于在选区激光熔化快速成型技术中应用的激光束,对应用于选区激光熔化快速成型技术中的高斯光束进行传输与变换。对其传输变换及聚焦特性进行了理论分析与实验验证,实验结果与理论分析的结果相符。取得了功率密度达106W/cm2以上的、光斑尺寸较小的、满足于在选取激光熔化技术中应用的光斑。将其应用于镍基合金(Ni25)和铜磷合金粉末的三维选区激光熔化快速成型。结果表明,这种传输变换及聚焦特性是可行有效的,得到了满足要求的光斑尺寸和功率密度。     

局域空心光束尺寸变换的模拟及实验

不同尺寸的局域空心光束可囚禁不同尺度的微粒,在生命科学和纳米科技中具有重要的意义.提出了一种利用普通球面透镜望远系统来变换局域空心光束尺寸的新方法.利用几何光学方法进行了分析,采用ZEMAX光学设计软件实现光线追迹进行模拟.实验中拍摄并测量了经望远系统变换前后的局域空心光束的尺寸.结果表明,局域空心光束尺寸的变换比等于...     

双包层掺杂光纤端面泵浦技术的研究

设计了一种基于准直聚焦透镜组的双包层掺杂光纤端面泵浦耦合系统,通过分析多模光纤耦合输出的泵浦光束参量经准直聚焦透镜光学系统后的变换特性,给出了能够满足泵浦光束与双包层掺杂光纤内包层模场分布匹配条件的透镜组参数及其位置参数设计要求,并利用结构参数与双包层掺杂光纤完全相同的未掺杂双包层光纤进行了耦合功率的实验测试,当泵浦源输出功率为50 W时,获得了34.1 W的入纤泵浦功率,泵浦耦合效率达到近70%,为搭建双包层光纤激光器奠定了基础.     

透镜焦距对局域空心光束尺寸的影响

基于衍射理论导出由轴棱锥和透镜系统产生的局域空心光束的光传输公式,模拟了其三维(3D)光强及截面光强分布图。由衍射理论和几何光学方法详细分析了聚焦透镜的焦距对局域空心光束尺寸的影响,即在相同条件下,局域空心光束的尺寸随着透镜焦距的增大而增大。实验得到当焦距分别为50 mm,70 mm以及100 mm时,局域空心光束的径向暗域尺寸为200μm,300μm以及430μm。理论计算、数值模拟与实验结果相吻合。     

梯度折射率光纤探针的光学特征参数

解析梯度折射率(GRIN)光纤探针的光学特征参数,用于光学相干层析技术(OCT)探头超小型化的研究。在概述由单模光纤、无芯光纤和GRIN光纤镜头构成的GRIN光纤探针模型的基础上,定义GRIN光纤探针的工作距离和聚焦光斑尺寸等光学特征参数,并用高斯光束复参数矩阵变换的方法推导探针光学特征参数的数学表达式,提出了探针光学特征参数的验证方法。结果显示,当无芯光纤和GRIN光纤镜头长度分别为0.48mm和0.17mm时,理论计算的工作距离和聚焦光斑尺寸分别为1.05mm和28.2μm;实验测得的工作距离和聚焦光斑尺寸分别为1.0mm和28μm。理论计算与实测结果吻合,验证了GRIN光纤探针光学特征参数及其解析方法的有效性。     

光束控制系统中热效应的数值模拟

编制了四维仿真程序,用以研究光束控制系统中的热效应对强激光传输的影响.作为数值模拟例,用Strehl比、可聚焦能力(即86.5%环围功率半径)、像散参数和光束重心偏移表征远场光束质量,研究了初始场分布为高斯和平顶分布的光束通过光束控制系统传输时热效应对远场光束质量的影响.结果表明,远场光束质量与初始场的空间分布有关,且随发射功率增大而变差.     

非傍轴矢量高斯光束

对傍轴近似下的光束传输变换问题进行了广泛的研究.但是,当光束有大的发散角或与波长相比拟的小光斑尺寸时,傍轴近似不再成立.已发展了多种非傍轴方法用以研究非傍轴光束的传输问题.对非傍轴光束的研究方法作了总结,使用角谱表示法和瑞利衍射积分公式对非傍轴矢量高斯光束的传输作了分析和比较.结果表明,基于瑞利衍射积分公式推导出的非傍轴矢量高斯光束在自由空间传输的解析公式在传输距离远大于波长时是严格的解析结果,并且在有光阑的情况下也是适用的.光束的非傍轴性主要由f参数决定,但当有光阑存在时,截断参数也对光束非傍轴行为产生影响.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.