5G网络环境下广播电视业务应用和安全风险分析

5G时代的到来是一把双刃剑,在看到5G技术优点的同时,也必须清楚地认识它所带来的风险,才能保障网络环境的安全,促进广播电视业务的健康发展,体现其社会价值和经济价值.对于5G网络环境下的广播电视业务应用和安全风险,广播电视管理者和技术人员应当进行详细的分析和研究.因此,以5G网络环境下广播电视业为研究对象,从5G网络新技术和5G广播电视业务两方面分析其所面临的安全风险及隐患,并提出现实对策.     

5G时代大数据特点和数据量预测方法研究

随着5G技术和应用的迅速普及,各类数据将会更加迅猛的增长,5G时代的大数据将会在数据结构组成和业务分布等方面出现显著的变化。本文研究5G广泛应用背景下大数据的特点数据量的预测方法。结合4G的业务场景和技术特点,分析5G时代的业务特点,将数据进行分类,并将相关产业进行细分,深入探讨不同业务和数据的特点,从而给出更能贴合场景的预测模型和方法。     

探析无线通信技术及5G关键技术

随着我国科技的不断发展,为了更好的满足诸多新型业务的需求,在这样的背景下,5G移动通信技术应运而生.本文首先对无线通信技术进行了简单的介绍,接下来,对5G关键技术(如高频段传输技术、MIMO技术等)进行了详细的研究,希望本文的研究能够为5G移动通信技术的发展提供一定的参考价值.     

基于5G技术的工业互联网平台安全性问题分析

随着5G技术的不断深入发展,跨界融合对工业互联网平台带来的安全性问题亟待解决.基于5G技术的工业互联网要想健康发展,就需要行业各方共同努力并达成共识,致力于打造基于5G技术的环境安全体系.本文介绍了我国5G技术下工业互联网的发展,对与5G技术相关的工业互联网安全现状及安全隐患进行了研究,并对5G工业互联网的安全发展提出建议.     

基于5G技术的工业互联网平台安全性问题分析

随着5G技术的不断深入发展,跨界融合对工业互联网平台带来的安全性问题亟待解决.基于5G技术的工业互联网要想健康发展,就需要行业各方共同努力并达成共识,致力于打造基于5G技术的环境安全体系.本文介绍了我国5G技术下工业互联网的发展,对与5G技术相关的工业互联网安全现状及安全隐患进行了研究,并对5G工业互联网的安全发展提出建议.     

5G环境下的大数据网络架构与传送技术分析

随着现代大数据技术应用环境的日益复杂化,使其网络架构与传送技术面临着严峻挑战与考验,如何在5G环境下,优化大数据网络架构与传送技术应用效果,备受业内关注。基于此,本文首先介绍了5G环境特点及对大数据网络的要求,分析了5G环境下的大数据网络架构与传送技术,并结合相关实践经验,分别从加强对防火墙技术的科学应用等多个角度与方面,提出了5G环境下大数据网络架构的安全防护策略,望对相关工作有所参照。     

探析5G承载的挑战与接入技术方案

5G技术的出现带动了传统信息传输模式的变革,其网络架构与业务特征相对于4G技术存在明显差异,对其承载网提出了更高要求。因此,详细阐述5G技术承载网面临的挑战,从多个技术层面入手,研究5G网络架构下的接入技术方案,希望能对相关人员提供借鉴。     

5G传输迈出新步伐运营商技术路线逐渐求同存异

随着5G部署时间线的逐步明朗,2020年商用5G成为多数运营商的目标.全球各大运营商近期均对5G传输技术方度关注,并对相关应用场景和解决方案进行了深入广泛的研究.国内三大运营商在近期先后发布了对5G传送网解决方案的思考,明确了包括5G业务需求场景、网络架构、前传\中传\回传解决方案等. 5G对传输网提出众多新诉求 在5G业务需求场景上,各运营商的理解基本一致,均认为5G将会有eMBB、mMTC和uRLLC三大类业务,关键网络需求包括大带宽、低时延、高精度时间同步、业务灵活调度、网络切片等.     

面向3G环境下的移动视频编码技术

 随着移动通信迈入3G时代,在众多的3G增值业务中,移动视频业务无疑将会成为3G业务的核心应用,以视频编码技术为代表的多媒体技术是支撑移动业务运营的基础技术。本文首先介绍了面向3G环境下的移动视频业务的发展现状及其面临的技术问题;然后从可分级编码、视频转码、多描述编码、基于视觉特性的编码几个方面论述了针对移动视频的编码技术;最后对面向3G环境下的移动视频编码技术进行了总结和展望。     

5G网络环境下广播电视网络安全风险分析

本文分析了5G带来的广播电视业务变化及安全问题,从5G网络新技术、5G广电新型业务应用角度,对5G网络环境下广播电视网络存在的安全风险进行分析。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its