细菌视紫红质三阶非线性光感应超快过程研究

用前向立体简并四波混频实验对光能转换生物分子细菌视紫红质(bR)作三阶非线性光学超快过程研究,观察到时间响应由快成份和慢成份组成.用激子位相空间充满理论和构形变化模型分别给予动力学机制解释.快成份对应于自由电子-空穴对形成的激子,慢成份对应于无辐射衰变形成的极化子.通过对实验曲线的数学拟合,得到激子饱和密度和激子长度,激子和极化子寿命、以及极化子形成效率等动力学参数.     

半导体微腔中单量子点的真空拉比分裂的温度效应

采用量子光学和极化子正则变换的方法研究了有限温度下半导体微腔中单量子点的激子动力学行为,并解析得到了激子真空拉比分裂随温度变化的函数关系.     

基于卤化物钙钛矿的法布里-珀罗微腔中激子极化激元（特邀）

当激子与腔光子间的相互作用强于激子和腔光子的衰减时,激子能级与腔模之间产生强耦合,形成的准粒子被称为激子极化激元。激子极化激元有效质量小,同时具有较强的非线性,在慢光和低功耗发光器件等方面具有巨大的应用前景。传统Ⅲ-Ⅴ族无机半导体材料激子束缚能较弱,而有机半导体材料非线性系数较小等问题限制着室温条件下激子极化激元的应用。卤化物钙钛矿材料具有高吸收系数、长扩散长度、高缺陷容忍度以及低非辐射复合率等一系列优异的光电性质,并且具有高的激子束缚能和振子强度,成为研究光与物质强相互作用的理想材料。文中从卤化物钙钛矿结构和法布里-珀罗（Fabry-Pérot, F-P）微腔类型两方面介绍了近年来卤化物钙钛矿与F-P微腔强耦合在激子极化激元方面的研究进展。首先回顾了极化激元的研究背景和卤化物钙钛矿的基本光电特性,其次介绍了三维钙钛矿和二维层状钙钛矿各自的特点以及与F-P微腔强耦合的相关研究,随后对钙钛矿的自构型和非自构型F-P微腔激子极化激元的调控与相关应用进行了讨论,最后总结和展望了卤化物钙钛矿激子极化激元面临的挑战以及未来研究方向。     

强THz场下半导体中动力学量子干涉的控制

半导体中载流子的量子相位相干性、退相干和多体关联效应之间的相互影响 ,以及量子干涉的可控性是当前半导体物理研究的一个关注焦点。作者最近提出半导体超快光学过程中的一种退相干机制 :激子动力学Fano共振。这种动力学量子干涉可以用 THz交流场强控制。利用激子动力学 Fano共振效应 ,在半导体材料吸收光谱与瞬态光谱中可以观测到强 THz场下的激子稳化效应 ,即激子电离率随 THz场强增加而下降的现象。以此可实验验证有争议的原子绝热稳化问题     

三维半导体GaAs量子阱微腔中的腔极化激元

半导体微腔中腔模和激子模耦合形成腔极化激元,三维微腔中由于横向限定腔模和激子模形成离散化的本征模式.本文计算了远离截止近似下,三维半导体微腔中空腔腔模的能量与微腔半径的关系;及腔模和激子模耦合后,三维半导体柱型微腔中具有相同角量子数和径向量子数的两个低阶腔模、重空穴激子模、轻空穴激子模耦合形成的腔极化激元能量随微腔半径变化的情况.结果表明随着微腔半径的减小腔模能量蓝移,腔模与相应的重空穴激子模、轻空穴激子模耦合形成的腔极化激元的三支随着微腔半径的减小存在明显的反交叉行为.随着微腔半径的变化,极化激元的三支所体现的模     

三维半导体GaAs量子阱微腔中的腔极化激元

半导体微腔中腔模和激子模耦合形成腔极化激元,三维微腔中由于横向限定腔模和激子模形成离散化的本征模式.本文计算了远离截止近似下,三维半导体微腔中空腔腔模的能量与微腔半径的关系;及腔模和激子模耦合后,三维半导体柱型微腔中具有相同角量子数和径向量子数的两个低阶腔模、重空穴激子模、轻空穴激子模耦合形成的腔极化激元能量随微腔半径变化的情况.结果表明随着微腔半径的减小腔模能量蓝移,腔模与相应的重空穴激子模、轻空穴激子模耦合形成的腔极化激元的三支随着微腔半径的减小存在明显的反交叉行为.随着微腔半径的变化,极化激元的三支所体现的模式的特性是变化的.     

电致发光聚合物在外电场中行为的动力学研究

用电子－晶格耦合的紧束缚模型和求介实时牛顿动力学方程的方法研究了具有额外电子和空穴的电致发光高分子在外电场中的行为。发现外电场注入的额外电子和空穴使电致发光高分子晶格弛豫,形成双极化子激子;并存在一个临界电场,当外电场大于或者等于临界电场时,双极化子激子解离成正、负极化子,导致发光猝灭．该结果与电致发光高分子的光荧光被强电场猝灭的实验现象一致．这个一致性反映了双极化子激子是电致发光高分子中的一种发光实体,说明了电致发光高分子在强电场下光荧光猝灭的物理原因是在强电场作用下电致发光高分子中的双极化子激子被解离成正、负极化子     

极性晶体中慢激子极化电势的性质

<正> 本文是作者对极性晶体中慢激子极化电势的讨论推广到电子和空穴质量不相等的情形.对激子声子系的哈密顿     

准二维强耦合激子能量的温度依赖性

采用线性组合算符法和LLP变分法研究了晶格热振动和极化子效应对量子阱中激子与界面光学(IO)声子强耦合又与体纵光学(LO)声子弱、中耦合体系的基态和激发态的影响,推导出作为量子阱宽和温度函数的激子基态能量的移动和第一内部激发态能量的移动的表达式,以AgCl/AgBr/AgCl量子阱为例进行了数值计算.结果表明,由激子IO声子强耦合所产生的激子基态能量移动和第一内部激发态能量移动随温度的升高而增大,而由激子-LO声子弱、中耦合所产生的激子基态能量移动和第一内部激发态能量移动随温度的升高而减小.     

Temperature Dependence of Vacuum Rabi Splitting in a Single Quantum Dot-Semiconductor Microcavity

采用量子光学和极化子正则变换的方法研究了有限温度下半导体微腔中单量子点的激子动力学行为,并解析得到了激子真空拉比分裂随温度变化的函数关系.     

极性三元混晶中的Wannier激子结合能

在无序元胞孤立位移(MREI)模型下．考虑激子与混晶中的两支光学声子的相互作用,利用变分法计算了极性三元混晶(TMCs)中的Wannier激子的结合能。数值计算给出几种混晶材料的结合能随组份x的变化关系。讨论了混晶中的两支光学声子对激子结合能的贡献。结果表明,当电子和空穴有效质量相差较大时,电声子相互作用对激子结合能有着重要的贡献,声子对结合能的影响随混晶组份非线性变化的。同时讨论了有效声子近似(EPMA)在计算激子结合能时的适用范围。     

立方相InGaN的稳态和瞬态光学特性研究

用光荧光和时间分辨光谱技术研究了MEB生长立方In     

Photoexcitation dynamics in polythiophene/fullerene blends for photovoltaic applications

We used the transient and steady state photomodulation spectroscopies for studying the photoexcitations dynamics in blends of regio-regular poly(3-hexylthiophene) (RR-P3HT) and fullerene in a broad spectral range from 0.13 to 2.25 eV. We found that both localized polarons and singlet excitons are instantaneously photogenerated in the blends. However the photogeneration process of delocalized polarons which contribute to the photocurrent proceeds in two steps: first, within a couple of ps the excitons generated in the polymer domains populate the charge transfer complex states at the RR-P3HT/fullerene interfaces; this is followed by the charge transfer ionization into delocalized charge polarons in the polymer and fullerene constituents within ～20 ps. In contrast, the localized polaron dynamics are unrelated with the excitons and delocalized polarons dynamics. We also report on the occurrence of ultrafast quantum interference anti-resonances between photoinduced infrared-active vibrations and the delocalized polaron band in the blends, which shows the delocalization character of the photogenerated charges that contribute to the photocurrent.     

缀饰激子在半导体微腔中的辐射

本文建立了半导体微腔的缀饰激子模型,在ＶＣＳＥＬ器件量子阱中的激子首先通过内电磁场与腔耦合,形成缀饰态。而后作为多粒子过程,缀饰激子与腔内真空场耦合产生辐射。通过ＱＥＤ方法,我们得到偶极子辐射密度方程和系统能量衰 变方程。从方程解的讨论中,我们得到超辐射和偶极子微腔方向 效应的结果,同时预言民当内场耦合足够强时,缀 激子可以直接辐射到一个很的激光模中。     

宽带隙半导体材料光电性能的测试

主要通过光致发光的实验手段,研究分析了在自支撑GaN衬底上生长的InGaN/GaN多量子阱(InGaN/GaN MQW)有源层中的载流子复合机制,实验中发现多量子阱的光致发光光谱中有一个与有源区中的深能级相关的额外的发光峰。在任何温度大功率激发条件下,自由激子的带边复合占主导地位,并且带边复合的强度随温度或激发功率的下降而减弱;在室温以下小功率激发条件下,局域化能级引入的束缚激子复合占主导地位,其复合强度随温度的下降而单调上升,随激发功率的下降而上升。带边复合在样品温度上升或者激发功率变大时发生蓝移,而局域的束缚激子复合辐射的峰值波长,随样品温度和激发功率的变化没有明显变化。     

The Effect of Ageing on Exciton Dynamics,Charge Separation,and Recombination in P3HT/PCBM Photovoltaic Blends

A study of how light‐induced degradation influences the fundamental photophysical processes in the active layer of poly(3‐hexylthiophene)/[6,6]‐phenyl C₆₁‐butyric acid methyl ester (P3HT/PCBM) solar cells is presented. Non‐encapsulated samples are systematically aged by exposure to AM 1.5 illumination in the presence of dry air for different periods of time. The extent of degradation is quantified by the relative loss in the absorption maximum of the P3HT, which is varied in the range 0% to 20%. For degraded samples an increasing loss in the number of excitons within the P3HT domains is observed with longer ageing periods. This loss occurs rapidly, within the first 15 ps after photoexcitation. A more pronounced decrease in the population of polarons than excitons is observed, which also occurs on a timescale of a few picoseconds. These observations, complemented by a quantitative analysis of the polaron and exciton population dynamics, unravel two primary loss mechanisms for the performances of aged P3HT/PCBM solar cells. One is an initial ultrafast decrease in the polaron generation, apparently not related to the exciton diffusion to the polymer/fullerene interface; the second, less significant, is a loss in the exciton population within the photoexcited P3HT domains. The steady‐state photoinduced absorption spectra of degraded samples exhibits the appearance of a signal ascribed to triplet excitons, which is absent for non‐degraded samples. This latter observation is interpreted considering the formation of degraded sites where intersystem crossing and triplet exciton formation is more effective. The photovoltaic characteristics of same blends are also studied and discussed by comparing the decrease in the overall power conversion efficiency of solar cells.     

Trap effect of triplet excitons on magnetoresistance in organic devices

In an organic bipolar device, injected electrons and holes can form spin singlet and triplet excitons, which are manipulated by an applied magnetic field. We suppose that the localized intra-molecule triplet exciton has a blocking effect on charge carrier transport by assuming that the intra-molecule triplet exciton can increase the on-site binding and make the electron states more localized. By considering the magnetic field-dependent transition between singlet and triplet excitons, from the master equation based on the hopping mechanism, we calculate the magnetoresistance (MR) in organic devices and compare the results with some experimental data. Our research reveals the importance of hyperfine interaction in organic magnetoresistance (OMAR). Especially, our investigation indicates that a bipolar organic device should have a larger MR value than a unipolar one due to the trap effect of triplet excitons on hopping electrons or holes, which is confirmed by some experimental observations.     

Exciton–Polaron‐Induced Aggregation of Wide‐Bandgap Materials and its Implication on the Electroluminescence Stability of Phosphorescent Organic Light‐Emitting Devices

The degradation mechanisms of phosphorescent organic light‐emitting devices (PhOLEDs) are studied. The results show that PhOLED degradation is closely linked to interactions between excitons and positive polarons in the host material of the emitter layer (EML), which lead to its aggregation near the EML/electron transport layer (ETL) interface. This exciton–polaron‐induced aggregation (EPIA) is associated with the emergence of new emission bands at longer wavelengths in the electroluminescence spectra of these materials, which can be detected after prolonged device operation. Such EPIA processes are found to occur in a variety of wide‐bandgap materials commonly used as hosts in PhOLEDs and are correlated with device degradation. Quite notably, the extent of EPIA appears to correlate with the material's bandgap rather than with the glass‐transition temperature. The findings uncover a new degradation mechanism, caused by polaron‐exciton interactions, that appears to be behind the lower stability of OLEDs utilizing wide‐bandgap materials in general. The same degradation mechanism can be expected to be present in other organic optoelectronic devices.     

Effect of coupling between excitons and gold nanoparticle surface plasmons on emission behavior of phosphorescent organic light-emitting diodes

Enhanced efficiency and reduced efficiency roll-off in phosphorescent organic light-emitting diodes (PhOLEDs) are realized by interposing a solution-processed gold nanoparticle (GNP)-based interlayer between the anode and the hole-injection layer. Transient photoluminescence measurements elucidate that a reduced lifetime of the triplet excitons was observed for samples having a GNP-interlayer as compared to a control sample without the GNP-interlayer. The decrease in the triplet exciton lifetime, caused by the coupling between the triplet excitons and the localized surface plasmons (LSPs) excited by the GNPs, enables reducing the triplet–triplet and triplet–polaron annihilation processes, thereby a reduced efficiency roll-off in PhOLEDs. The presence of a GNP-interlayer also acts as an optical out-coupling layer contributing to the efficiency enhancement and was demonstrated by the theoretical simulation.     

Polarization of the optical emission of polaron excitons in anisotropic quantum dots

A theory of large polarons in ellipsoidal quantum dots is developed. The optical spectrum of polaron excitons and its dependence on the degree of anisotropy of a quantum dot are analyzed. It is shown that the polaron ground state exhibits specific anisotropic polarization of the medium. The symmetry of the wave function of the ground state depends on the band structure of the material and on the shape of the quantum dot. The conditions under which strong polarization of the zero-phonon emission line produced by interband optical transitions occurs are determined. The possible polarization of this line is determined for various relationships between the polaron energy and the energy of the exchange interaction.