共查询到16条相似文献,搜索用时 109 毫秒
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《固体电子学研究与进展》2015,(4)
介绍了一个工作在5.8~6.2GHz的高效率磷化镓铟/砷化镓异质结双极型晶体管(InGaP/GaAs HBT)功率放大器。设计了具有良好带宽性能的J类输出匹配网络,并通过InGaP/GaAs HBT单片微波集成电路(MMIC)技术和射频基板封装技术得以实现。在5.8~6.2GHz的频率范围内,用连续波(CW)信号测试放大器得到的1dB压缩点输出功率都大于31dBm,饱和输出功率都大于32dBm、最大的附加功率效率(PAE)都大于56%。 相似文献
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采用自行研制的两只C波段5.2-5.8GHz 4W以上的GaAs MESFET功率营芯,通过设计适当的匹配网络、优化网络元件参数,结合工艺制作技术,实现了C波段5.2-5.8GHz 8W GaAs MESFET功率管。该功率管在5.2-5.8GHz频带内的功率增益约为7.0dB,1dB的压缩功率约为39dBm,功率附加效率约为30%。功率管的测量值与计算值基本吻合。 相似文献
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针对高质量无线局域网的传输需求,设计了一款工作在5~6 GHz的宽带磷化镓铟/砷化镓异质结双极型晶体管(InGaP/GaAs HBT)功率放大器芯片。针对HBT晶体管自热效应产生的非线性和电流不稳定现象,采用自适应线性化偏置技术,有效地解决了上述问题。针对射频系统的功耗问题,设计了改进的射频功率检测电路,以实现射频系统的自动增益控制,降低功耗。通过InGaP/GaAs HBT单片微波集成电路(MMIC)技术实现该功率放大器芯片。仿真结果表明,功放芯片的小信号增益达到32 dB;1 dB压缩点功率为28.5 dBm@5.5 GHz,功率附加效率PAE超过32%@5.5 GHz;输出功率为20 dBm时,IMD3低于-32 dBc。 相似文献
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介绍了一种应用于W-LAN系统的5.8 GHz InGaP/GaAs HBT MMIC功率放大器。该功率放大器采用了自适应线性化偏置电路来改善线性度和效率,同时偏置电路中的温度补偿电路可以抑制直流工作点随温度的变化,采用RC稳定网络使放大器在较宽频带内具有绝对稳定性。在单独供电3.6 V电压情况下,功率放大器的增益为26 dB,1 dB压缩点处输出功率为26.4 dBm,功率附加效率(PAE)为25%。三阶交调系数(IMD3)在输出功率为26.4 dBm时为-19 dBc,输出功率为20 dBm时低于-38 dBc,在1 dB压缩点处偏移频率为20 MHz时邻道功率比(ACPR)值为-31 dBc。 相似文献
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研制了X波段的InGaP/GaAs HBT单级MMIC功率放大器,该电路采用自行开发的GaAs HBT自对准工艺技术制作.电路偏置于AB类,小信号S参数测试在8~8.5GHz范围内,线性增益为8~9dB,输入驻波比小于2,输出驻波比小于3,优化集电极偏置后,线性增益为9~10dB.在8.5GHz进行连续波功率测试,在优化的负载阻抗条件下,P1dB输出功率为29.4dBm,相应增益7.2dB,相应PAE〉40%,电路的饱和输出功率Psat为30dBm. 相似文献
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The low-phase-noise GaInP/GaAs heterojunction bipolar transistor (HBT) quadrature voltage controlled oscillator (QVCO) using transformer-based superharmonic coupling topology is demonstrated for the first time. The fully integrated QVCO at 4.87GHz has phase noise of -131dBc/Hz at 1-MHz offset frequency, output power of -4dBm and the figure of merit (FOM) -198dBc/Hz. The state-of-the-art phase noise FOM is attributed to the superior GaInP/GaAs HBT low-frequency device noise and the high quality transformer formed on the GaAs semi-insulating substrate. 相似文献
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Mingquan Bao Yinggang Li Jacobsson H. 《Microwave and Wireless Components Letters, IEEE》2005,15(11):751-753
A 25-GHz monolithic voltage controlled oscillator (VCO) has been designed and fabricated in a commercial InGaP/GaAs heterojunction bipolar transistor (HBT) process. This balanced VCO has a novel topology using a feedback /spl pi/-network and a common-emitter transistor configuration. Ultra-low phase noise is achieved: -106 dBc/Hz and -130 dBc/Hz at 100kHz and 1-MHz offset frequency, respectively. To the authors' knowledge, this is the lowest phase noise achieved in a monolithic microwave integrated circuit (MMIC) VCO at such high frequency. The single-ended output power is -1 dBm. It can be tuned between 25.33GHz and 25.75GHz using the base-collector junction capacitor of the HBT as a varactor. The dc power consumption is 90mW for a 9-V supply. An excellent figure-of-merit of -195 dBc/Hz is obtained. 相似文献
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Balanced voltage-controlled oscillator (VCO) monolithic microwave integrated circuits (MMICs) based on a coupled Colpitt topology with a fully integrated tank are presented utilizing SiGe heterojunction bipolar transistor (HBT) and InGaP/GaAs HBT technologies. Minimum phase noise is obtained for all designs by optimization of the tank circuit including the varactor, maximizing the tank amplitude, and designing the VCO for Class C operation. Fundamental and second harmonic VCOs are evaluated. A minimum phase noise of less than -112 dBc at an output power of 5.5 dBm is achieved at 100-kHz carrier offset and 6.4-GHz oscillation frequency for the fundamental InGaP/GaAs HBT VCO. The second harmonic VCO achieves a minimum measured phase noise of -120 dBc at 100 kHz at 13 GHz. To our best knowledge, this is the lowest reported phase noise to date for a varactor-based VCO with a fully integrated tank. The fundamental frequency SiGe HBT oscillator achieves a phase noise of -108 dBc at 100 kHz at 5 GHz. All MMICs are fabricated in commercial foundry MMIC processes. 相似文献
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This paper describes the design of a 5.7–6.4GHz GaAs Heterojunction bipolar transistor (HBT) power amplifier for broadband wireless application such as wireless metropolitan area networks. A bias circuit is proposed which enhances the power gain and provides a good linearity. Using the wideband matching network tech-niques with trap circuits embedded to filter the harmonics and the diode-based linearizing techniques, a broadband power amplifier module was obtained which exhibited a gain above 28dB. This is about 1dB improvement com-pared with those normal bias circuits at a supply volt-age of 5V in the frequency range of 5.7–6.4GHz, measured with Continuous wave(CW) signals. The saturated output power was greater than 33dBm in 5.7–6.4GHz and the out-put 1dB compression point was greater than 31dBm. The phase deviation was less than 5 degrees when the output power below 33dBm. The second and third order harmonic components were also less than -45dBc and -50dBc. 相似文献