AT24系列存储器数据串并转换接口的IP核设计

AT24系列EEPROM芯片是基于I^2C（Inter-Integrated Circuit）总线协议而设计的。该存储器与微处理器通信，需要把串行数据转换成并行数据，或把并行数据转换成串行数据后，通信过程才能进行。介绍和VHDL语言设计该存储器数据串并转换接口的IP核，从而通过硬件（FPGA或其他可编程芯片）实现AT24系列存储器与8位微处理器之间的并行通信。     

高精度数字温度传感器系列

AT30TS750是首个集成非易失性存储器和串行EEPROM存储器的高精度数字温度传感器系列。这种组合可任上电循环中保持用户定制的设置,从而简化系统设计,减少处理器启动代码,提高可靠性并确保证常运行。     

数据闪存AT45DB161B在语音电脑复读机中的应用

数据闪存是具有SPI总线接口的串行闪烁存储器,具有宽电源电压、大容量、接口简单、读写速度快等特点。文中介绍了数据闪存AT45DB161B芯片在语音电脑复读机中的应用,给出了通过8位AVRRICS微控制器AT90S8535来实现记录和复读的方法。     

基于MSP430F12x2的SPI进行大容量数据存储器扩展

由于常规扩展单片机外部数据存储器需要大量的地址总线和数据总线引脚,因而其访问外部数据存储器容量受单片机引脚数量的极大限制。为了解决这一瓶颈,介绍了一种利用单片机MSP430F12x2的SPI与串行FLASH存储器AT45DB081的接口,实现大容量数据存储器扩展的设计方案。该方案的创新在于充分利用了SPI的功能,在占用少量单片机引脚的情况下,实现了大容量数据存储器的扩展。     

AT90系列单片机的性能及使用

AT90系列8位单片机(即AVR系列)是美国ATMEL公司继AT89系列单片机后推出的RISC(精简指令集)单片机,它性能优越,价格较低,使用方便,而且引脚与AT89系列同级别的兼容。AT90系列有120条双字节指令,绝大多数指令的运行时间为单一时钟周期。它工作频率为0～16MHz,处理能力为1MIPS/MHz。它在片内集成了8～16位定时器、看门狗、上电复位电路、FLASH程序存储器、RAM和EEPROM数据存储器、32个工作寄存器(均可做累加器),均有ISP功能(在线下载),有些还有异步串行通讯口、SPI串行口、PWM输出、A/D转换器等。它的工作电压为2.7～6V,功耗很低,并有     

I^2C串行总线存储技术在单片机系统中的应用

介绍I^2C串行总线原理及AT24CXX系列串行EEPROM的特点。着重阐述了利用I^2C串行总线和AT24CXX系列串行EEPROM实现数据存储的技术，并给出了该技术在MCS51系列单片机系统中的实现方法。     

新型大容量闪存与单片机的接口设计

介绍了大容量存储器AT45DB041B的特点,给出了用AVR单片机对AT45DB041B进行读写操作的程序。     

欧姆龙推出手机显示用双面导光板

意法半导体(ST)日前推出两个新的数据和程序存储器件M45PE10和M45PE20。这两个器件属于ST的高速低压串行闪存产品系列，将用于应答机、寻呼机、视频游戏和电子玩具等快速变化的参数数据应用。这两个1兆位和2兆位的器件维持了与串行EEPROM产品组合之间的连续性。     

精品展台

微芯片与存储器4M位串行EEPROMAtmel公司推出两款可编程4 兆位3.3V串行配置的EEPROM AT17LV040和AT17LV040A。AT17LV040可存储Atmel FPSLIC可编程SoC系列和高密度Xilinx Virtex或Spartan FPGA的所有配置信息。AT17LV040支持Altera的Apex 20KC FPGA。它们用3.3或5V单电源进行读和写操作。由外部引脚设置的写保护功能,可保护EEPROM阵列的任一部分,这样其余阵列可用于存储应用数据。Atmel保证AT17LV040 EEPROM 10000次的写周期和至少100年时间数据保存。用该公司ADH2200E编程器或其它公司的标准编程器可对器件…     

闪速存储器AT29C01A原理及应用

本文以AT29C010A为例，介绍了ATMEL29系列大容量闪速存储器的结构、特点、性能及使用方法，结合实际工程应用，详细说明了AT29C010A闪速存储器在工业智能检测仪器中的硬件接口和软件编程注意事项。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.