Ka波段三路波导功分器/合路器

文章设计了一种可以使用在固态合成发射机上的三路等分功率波导功分器/合路器。在波导分支定向耦合器的基础上,增加一路副线波导,构成了一个一路输入、一路直通、两路耦合、两路隔离的六端口网络;采用增加波导长度的方式解决了实际应用中的相位补偿问题。另外在功分器的三路输出端增加了微带部分以提高功分器的可调试性。实际测量数据基本符合仿真结果:在1GHz带宽内,功分器的一路插损小于6dB,输入驻波小于1.6;合路器的一路插损小于4.9dB,输出驻波小于1.3。其性能满足使用要求。文章最后对该类型的波导功分器/合路器的设计提出若干改进方案。     

一种新型毫米波8路功分器/合成器的设计

设计了一种Q波段8路功分器/合成器。利用波导功分器及微带功分器混合设计,提出了波导-微带4路功分器与3 dB Wilkinson电桥一体化设计思想,设计出一种较高隔离度,结构紧凑的新型8路功率分配器/合成器。通过高频电磁仿真软件(HFSS)仿真设计,在42 GHz~47 GHz频带范围内,8路分配器输出端口反射损耗优于-19 dB;8路输出端口的幅度不平衡度小于0.25 dB,相位不平衡度小于0.5o,插损小于0.25 dB;4个输出口之间的隔离度大于9 dB,是一种较为理想的8路功率分配器/合成器,在实际小体积高合成效率要求的固态功率合成领域,以及具有小体积的多路信道实现中,具有较高的应用价值。     

一个0.14 THz同轴波导五路径向功率合成器

基于同轴波导径向合成器提出了一款可用于太赫兹频段的任意路数功率合成器。该功率合成器采用二阶阶梯变换结构,实现电场方向从同轴轴向到径向的扩散传播,并通过径向外围均匀分布的Y型功分结构实现任意路数功分。以D波段五路功率合成器为例,采用背靠背测试,在130 GHz到150 GHz频带内,背靠背插入损耗优于2 dB,带内回波损耗优于15 dB。由于是背靠背测试,因此该功率合成器单边损耗约为0.72 dB,折合合成效率为84.7%。     

新型微带三路功分器及其散射特性分析

提出了一种微带三路功分器结构,由12段1/4波长微带线和两个隔离电阻组成,通过调整各传输线特征阻抗可实现不同功率分配比.应用多端口网络级联方法对其散射参数进行分析并得到了近似表达式,采用数值优化方法结合电磁软件仿真设计了工作于2.4GHz,具有不同功分比的三路功分器.仿真及实测结果表明:该新型功分器可在超过25%相对带宽内实现各端口回波损耗-16dB,功分端口间隔离度20dB,功分比误差±0.5dB.功分器结构简单紧凑,适用于微波混合电路和微波集成电路.     

MEMS微同轴宽带功分器

随着微波系统大功率、超宽带的发展,对功率分配/合成结构的性能提出了更高的要求,超宽带、低损耗、小尺寸、易于集成的功分器成为研究热点。基于微电子机械系统(MEMS)工艺的微同轴射频传输线具有超宽带、无色散、低损耗和高隔离度等特点,使用微同轴工艺制备的功分器具有超宽带、低损耗、易于集成、小型化和可移植性好等特点。仿真并制作了一款微同轴一分二功分器。测试结果表明,在6~18GHz内插入损耗小于0.3dB,功分器体积为3mm×5.85mm×0.5mm,功率容量不小于100W。通过包金带的方式装配了功分器的背靠背结构。测试结果表明,背靠背结构损耗与预期损耗相符。为微同轴功分器在100W有源功放组件中的应用奠定了基础。     

X波段8路波导功分器/合成器

波导结构具有传输损耗低、功率容量大的特点。本文提出了一种基于波导结构功分器/合成器设计方法,并利用CST2014软件设计了一款X波段8路波导功分器/合成器。仿真与测试都显示其性能良好,在整个X波段插损小于0.05dB,反射损耗大于15dB,中间大部分频段(8.8~12.2GHz)反射损耗优于20dB。     

一种新型Ka波段八路功率分配/合成网络的设计

本文提出了一种新型的Ka波段波导功率分配/合成网络,该功分合成器采用一个两路ET和两个四路H-T、E-T相结合的新型四路功分器来实现八路功率分配或者功率合成。由于该结构的对称性使得功率分配后各个支路具有良好的幅相一致性,有利于实现较高的合成效率。另外,此网络形式结构紧凑、插损小,使得其在毫米波发射机中具有良好的应用前景。     

紧凑型基片集成波导功率合成放大器研制

 设计、制作了一个X波段紧凑型结构的四路功率合成放大器,合成功放在10.4GHz上的1dB压缩点输出功率P_1dB约为8W(连续波),在9.79~10.62GHz范围内,合成效率大于50%,在10.21GHz上其最大合成效率约为80%.该合成功放无源结构是由一对四路对称梳状功分器采用背靠背方式组成,功分器输入输出端口均包含基片集成波导-微带转接结构,以便于功分/合成器与其它平面器件相连接.测试结果表明这项技术可方便地用于小型化、模块化微波与毫米波合成功放设计.     

一种新型的大功率分配器的设计

阐述了一种可以承受大功率传输的功率分配器的设计理论和关键技术的方法,并且举例实现了该功分器用微波软件HFSS的仿真设计.实际制作出一分二的功率分配器在频率范围1.8～3.2 GHz内至少可以承受100 W的功率,且输入驻波比小于1.2,插损小于3 dB（包括接头）,与同类器件相比不仅性能好而且结构也简单,易加工,有广阔的实用前景.     

一种新型的倍频程带宽微带三等分功分器

介绍一种新型的倍频程带宽微带三等分功分器的设计原理和研制结果。与波导三等分功分器和非对称型微带三等分功分器相比,新型功分器的突出优点是:频带宽、插损小,驻波比低、隔离度好、不平分度小。 测试结果表明在6～10GHz频率范围内,每路插损小于5.6dB,不平分度小于0.4dB,各路输出之间隔离度大子22dB,输入端驻波比小于1.7(包括接头)。     

10?30 GHz monolithic GaAs travelling-wave divider/combiner

A four-way monolithic GaAs travelling-wave power divider/combiner has been designed, fabricated and evaluated. With a design centre frequency of 20 GHz, a bandwidth of from 10 GHz to 30 GHz has been measured. The insertion loss per dividing or combining action is less than 0.5 dB, with isolation between ports no worse than 20 dB. The input/output VSWRs are better than 2:1 across the same band. This divider/combiner can readily be used with monolithic GaAs power FET amplifiers to produce a several-fold increase in output powers over the 10 to 30 GHz frequency range.     

Sub-THz Four-Way Waveguide Power Combiner With Low Insertion Loss

A four-way waveguide power divider has been developed in sub-THz band. The waveguide power divider was achieved with the improved H-plane T-junction structure. By tuning the depth and width at the junction of the waveguide, the input impendence was matched and the two-way output power amplitude and phase were at the same level. The four-way power divider was realized by the concatenation of two same T-junction at the two output ports. A sub-THz four-way passive power combiner is designed, fabricated and measured. The measure results show that the measured insertion loss of the fabricated four-way passive power combiner is less than 1.2 dB whereas the input return loss is greater than 14.8 dB from 97.5 to 101.7 GHz. Experiments on the sub-THz four-way passive power combiner show that a minimum insertion loss of 1 dB has been achieved at about 99.5 GHz. The measured minimum insertion loss of the waveguide power divider is half of the insertion loss for the entire passive power combiner (0.5 dB), which corresponds to a power-combining efficiency of 89 %. The measured results agree with the simulated ones closely.     

基于裂缝电桥Ka波段功率分配/合成网络

介绍了一种Ka波段的四路功率分配/合成网络。该网络采用H面波导裂缝电桥结构,只需要一个耦合单元,结构简单、易于加工。这种合成网络将使用在基于MMIC单片TGA1141的四路功率合成器中,预计在2 GHz带宽内合成输出功率可以达到连续波5 W以上。通过三维电磁仿真软件Ansoft Hfss对该网络进行了设计和优化。仿真结果表明,该网络在33-37 GHz的频段内,插入损耗小于0.3 dB,回波损耗大于20 dB。     

Design of Low-Profile Millimeter-Wave Substrate Integrated Waveguide Power Divider/Combiner

A low-profile millimeter-wave substrate integrated waveguide (SIW) power divider/combiner is presented in this paper. The simplified model of this compact SIW power dividing/combining structure has been developed. Analysis based on equivalent circuits gives the design formula for perfect power dividing/combining. In order to verify the validity of the design method, a four-way SIW power divider/combiner circuit operating at Ka band is designed, fabricated and measured. Good agreement between simulated and measured results is found for the proposed passive power divider/combiner. Experiments on the four-way passive divider/combiner back-to-back design demonstrate a minimum overall insertion loss of 1.5 dB at 31.1 GHz, corresponding to a power-combining efficiency of 84%. The measured 10-dB return loss bandwidth is demonstrated to be 2.2 GHz, and its 0.5-dB bandwidth was 2 GHz.     

Broadband Lumped-Element Integrated $N$-Way Power Dividers for Voltage Standards

This paper presents a monolithically integrated broadband lumped-element Wilkinson power divider centered at 20 GHz, which was designed and fabricated to uniformly distribute power to arrays of Josephson junctions (JJs) for superconducting voltage standards. This solution achieves a fourfold decrease in chip area, and a twofold increase in bandwidth (BW) when compared to the previous narrowband distributed circuit. A single Wilkinson divider demonstrates 0.4-dB maximum insertion loss (IL), a 10-dB match BW of 10–24.5 GHz, and a 10-dB isolation BW of 13–30 GHz. A 16-way four-level binary Wilkinson power divider network is characterized in a divider/attenuator/combiner back-to-back measurement configuration with a 10-dB match BW of 10–25 GHz. In the 15–22-GHz band of interest, the maximum IL for the 16-way divider network is 0.5 dB, with an average of 0.2 dB. The amplitude balance of the divider at 15, 19, and 22 GHz is measured to be ${pm}{hbox{1.0 dB}}$ utilizing 16 arrays of 15 600 JJs as on-chip power detectors.      

Miniature Four-Way and Two-Way 24 GHz Wilkinson Power Dividers in 0.13 μm CMOS

This letter presents 24 GHz four-way and two-way miniature Wilkinson power dividers (PDs) in a standard CMOS technology. The chip area is significantly reduced using a lumped-element design, and the effective areas of four-way and two-way Wilkinson dividers are 0.33 times 0.33 mm² and 0.12 times 0.29 mm², respectively. The four-way Wilkinson divider results in an insertion loss <2.4 dB, an input/output return loss better 15.5 dB, and a port-to-port isolation >24.7 dB from 22 to 26 GHz. The two-way Wilkinson divider results in an insertion loss <1.4 dB, an input/output return loss better 8.9 dB, and a port-to-port isolation >14.8 dB from 22 to 26 GHz. To the author's knowledge, this is the first demonstration of 24 GHz four-way Wilkinson PD in a standard CMOS technology.     

一种基于微带与槽线过渡结构的超宽带功分器

提出了一种基于微带与槽线过渡结构的超宽带180°型3 dB功分器,采用扇形过渡结构替代传统的圆形过渡结构,拓展了功分器的工作带宽。该功分器仿真和测试结果吻合良好,在3.1~10.6 GHz频带内实现了插入损耗小于1.5 dB,两输出口的幅度误差小于0.8 dB,相位误差小于1°,输入端口反射系数小于-12 dB。     

V-band high-efficiency broadband power combiner and power-combining module using double antipodal finline transitions

A V-band high-efficiency power-combining module was developed using double antipodal finline structures. The combiner performs the dual functionality of power combining and mode transition from microstrip to waveguide. The measurement of the back-to-back connected combiner demonstrated an insertion loss of 1.2 dB and return loss better than 15 dB around 60 GHz with a 3 dB bandwidth of 18 GHz. The power-combining module incorporating two MMIC power amplifiers demonstrated a combining efficiency higher than 80%.     

A 6-GHz 80-W GaAs FET Amplifier with a TM-Mode Cavity Power Combiner

A novel 8-way divider/combiner using TM/sub 010/- and TM/sub 020/ -mode cavities was developed. This divider/combiner has an insertion loss of 0.2 dB and a bandwidth of 600 MHz in the 6-GHz communications band. For broadening the operating bandwidth of the divider/combiner, two techniques of double cavities and tight coupling are described. Degradation of power-combining efficiency is also discussed when input signals into a power combiner have variations in amplitude and phase. By using this divider/combiner, an experimental 6-GHz 80-W GaAs FET amplifier with a combining efficiency of 85 percent was demonstrated to investigate the feasibility of a solid-state high-power amplifier.     

一种毫米波宽带大功率合成器

介绍一种基于波导微带探针过渡的毫米波功率分配／合成器,仿真结果显示在27．5GHz～37．5GHz的频带内,其回波损耗优于20dB,插入损耗优于0．2dB。该种功率分配／合成方案具有宽带宽、合成效率高、结构紧凑且散热良好的特性,在功率合成领域应用前景广阔。