基于R语言和大数据的室分弱覆盖分析方法及工具

随着LTE的推广及应用,深度覆盖率已成为影响用户感知的关键指标之一.由于网络的复杂性及资源限制,仅靠人力很难精准高效地定位导致室分弱覆盖的问题点及其原因.针对这个问题,本文提出了一种基于R语言和大数据的自动分析工具,结合工参分析全网MR数据特征、参数和零话务数据,可输出室分弱覆盖小区清单及包含了故障类型判定、参数核查和周边零话务小区核查的整改初步方案,并通过GIS呈现,为后期现场排查提供了准确方向与指导.     

传统室分基站设备提升深度覆盖的研究

随着LTE迅速发展,用户对网络质量要求越来越高,但是现有移动网中存在大量的深度覆盖不足。为了满足用户需求,目前需要投入的大量的硬件及License资源,满足深度覆盖需求。由于现有网络发展投资受限,合理利用现有资源,节约成本为当前急需解决的课题。为了更好利用现有室分网络资源,改善用户感知,网络优化中心创新性提出室分网络资源最大化利用的方案,通过优化调整节省BBU、RRU及相关License,用于深度覆盖补盲。本文利用现网的室分基站设备通过资源挖潜等手段节约、整合出部分资源用于建设楼间对打解决深度覆盖问题。提升4G深度覆盖不足、投诉严重、MR采样结果偏低的高价值小区,提升竞争优势,提高客户满意度,打造精品网络。     

基于AI的室分故障问题定位方法研究与实践

目前4G室内深度覆盖不足问题是影响客户体验和运营商收益的主要因素。本文通过对室分站点性能和用户MR等数据的全量采集与研究分析,利用AI技术建立室分故障特征模型,并根据模型中好点和差点与室分物业点、站点、小区进行匹配,实现室分故障的精准定位,进一步提升网络优化及维护工作效率。     

5G宏站覆盖室内能效分析系统设计与应用

当前5G室分建设存在投资上限，而部分楼宇在室内外资源上协同性不高，宏微资源投放重复，室分建设能效过低。在楼宇深度覆盖评估方法上依赖人工程度高和自动化程度低，如何快速提高楼宇室分建设能效问题成为当前工作重点之一。本文使用4G/5GMDT测量数据和建筑物电子地图信息，结合4G/5G工参，通过建立5G室内穿损模型与4G/5G室外覆盖差异模型，形成基于AI的5G宏站覆盖室内能效分析系统，高效精准地评估楼宇深度覆盖问题，使得网络资源投放有的放矢，实现室分能效的最大化。     

一种TD-LTE室内分布系统设计模型

引入室内分布与室分外引互为补充的室内分布系统设计模型,在实际工程中采用室内分布与室分外引的设计模型实现对楼宇小区的覆盖,通过现场模测证明了室内分布与室分外引相结合的室内覆盖方式的有效性,为物业敏感、室分入户困难等类似场景的室分覆盖提供整体解决方案。     

实现小区深度覆盖选择美化天线的方案探讨

文章分析了小区深度覆盖在实际建设中存在的问题,并针对这些问题对目前采用常规方法建设小区覆盖的效果进行分析对比,提出了在小区深度覆盖中不同楼宇类型应采用不同技术参数的天线方案。     

基于偏离度的问题RRU识别算法研究

为了保证建筑物内的深度覆盖常需大量建设室分,针对室分小区出现问题概率高、发现问题不及时、排查工作量大等困难,提出一种基于偏离度的问题RRU智能识别算法,远程实现了对问题RRU的快速定位和问题类型的判定,再关联室分图纸数据库,自动输出问题RRU的安装位置。该算法能及时发现隐性室分问题、压减现场工作量、提升优化方案准确性,达到提升用户感知、支撑现场优化工作的双重效果。     

TD-LTE室分高负荷小区解决方案的研究

TD-LTE室分小区高负荷直接影响室内4G终端的下载速率、接通率和掉线率等各项指标,从而导致客户感知急剧下降,而且由于室内无线环境的封闭性,室分小区之间的覆盖独立性,仅仅通过参数均衡的手段达到负荷降低的效果非常不明显,因此本文针对目前影响室内用户感知的高负荷问题,从高负荷小区的标准出发,提出各类降低室分小区负荷的方法,对室分小区高负荷问题进行分析、研究与解决,从而作为研究方法提供给TD-LTE室内小区负荷均衡与优化相关指导意见.     

LTE室分高负荷小区解决方案的研究

LTE室分小区高负荷直接影响室内4G终端的下载速率、接通率和掉线率等各项指标,从而导致客户感知急剧下降,而且由于室内无线环境的封闭性,室分小区之间的覆盖独立性,仅仅通过参数均衡的手段达到负荷降低的效果非常不明显,因此本文针对目前影响室内用户感知的高负荷问题,从高负荷小区的标准出发,提出各类降低室分小区负荷的方法,对室分小区高负荷问题进行分析、研究与解决,从而作为研究方法提供给LTE室内小区负荷均衡与优化相关指导意见。     

MR弱覆盖小区分析及保障方案

基于MR测量统计的弱覆盖能够系统、全面地反映小区的覆盖情况,能够弥补ATU等DT测试设备的测试盲点以及不能全天候测试的不足。文章通过一体化微基站解决居民区深度覆盖、网络结构补点建设、天面资源专项整治、室分专项整治等多样的优化调整方案,大力整治MR弱覆盖,高效推进问题小区整治。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-