等离子显示技术的新进展

介绍了等离子显示屏的单元结构、放电机理、驱动技术以及图像处理技术等方面的研究内容和重要进展,对等离子显示器发光效率达到5 lm/W和10 lm/W时,PDP可能的单元结构以及引起的亮度、功耗、驱动电路系统架构的变化进行了分析,特别是对PDP成本的变化趋势进行了预测.     

2006年美国无线通信动态

在对美国2005年无线通信市场发展现状和趋势研究总结的基础上,对其2006年的热点和动态进行了简明扼要的介绍和评析.主要涉及移动终端外形设计上的变化和追求、多种辅助增值功能的增加、3G的部署和服务发展趋势,以及IMS、FMC、MVNO、移动TV等.     

整车接地电流测试验证

随着车辆电气系统复杂性的增加,车辆的线束设计与接地点的设计难度也随之增加.随着汽车使用时间的延长,车辆的接地点出现腐蚀松动甚至接地点失效的现象时有发生,如果车辆接地点设计不合理或是线束的线径选择不合理,轻则使主机厂的造车成本提高,重则会对车辆及乘员造成严重的安全隐患.文章对整车接地电流的测试内容/目的、测试方法、评价依据和案例分析等方面进行了详细介绍和分析.     

征稿启事

本刊自1980年创刊至今已经十几年了,十几年来电子工业得到了突飞猛进的发展,电子工业的质量管理工作得到了极大的改善,新产品层出不穷.为了反映电子工业这种日新月异的变化,本刊自1994年1月起对刊物内容进行了根本性改革,改革后的内容及时报导国家有关电子工业的政策法规、介绍国内外先进的科学技术、加强对投资类与基础类产业的报道、反映国内各地投资建厂情况、介绍各种电子新产品、反映各地市场情况、探讨现代管理方法和测试方法及接受用户投诉等.     

ULSI硅衬底CMP速率稳定性的研究

介绍了ULSI硅衬底的抛光工艺,并对其抛光机理进行了理论分析.通过对抛光液循环使用过程中CMP速率稳定性及其影响因素进行深入系统的分析,得出pH值、抛光温度和黏度等因素的变化是影响抛光速率稳定性的主要原因.并提出改进方案:控制好温度范围和流量的改变,以及循环中适当增加新的抛光液.为CMP速率稳定性的研究提供了有意义的借鉴.     

征稿启事

本刊自1980年创刊至今已经十几年了,十几年电子工业得到了突飞猛进的发展,电子工业的质量管理工作得到了极大的改善,新产品层出不穷.为了反映电子工业这种日新月异的变化,本刊自1994年1月起将对刊物内容进行根本性改革,改革后的内容将及时报导国家有关电子工业的政策法规、介绍国内外先进的科学技术、加强对投资类与基础类产业的报道、反映国内各地投资建厂情况、介绍各种电子新产品、反映各地市场情况、探讨现代管理方法和测试方法及接受用户投诉等.     

新版ISO／IEC导则第1部分的主要修改

介绍了ISO/IEC导则的现行结构,提供了ISO/IEC导则第1部分第7版(2009年)的修订信息及修改的详细内容,包括增加项目委员会的程序,增加有关技术委员会和分委员会范围编写的建议、扩大主席和秘书处的职责范围、增加委员会阶段的灵活性、修改版权内容等.     

CISPR16-1-4:2003第二修正案

介绍2005年11月发布的CISPR16-1-4:2003第二修正案中新增和变化内容.主要内容是规定了在进行辐射发射测试时,对由于使用桌子和天线塔而引入的场强不确定度的评价方法.     

新的欧洲汽车电磁兼容指令2004/104/EC介绍

文章对欧洲汽车电磁兼容新指令2004/104/EC的部分内容,主要是变化的内容作了介绍.     

中国移动CDN海外节点建设与内容管理

本文主要介绍了中国移动CDN网络建设的概况和CDN内容管理,重点包括CDN海外节点的建设思路、互联互通等,并对CDN内容引入与内容输出进行了描述,最后对于CDN未来技术发展也进行了简介.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-