基于激光干涉仪驱动电路的数模电路实践教学平台研究

氦氖激光器是激光干涉仪的常用光源,激光干涉仪作为检测纳米尺度的超高精度检测设备要求激光光源具有高稳定性,高精度的驱动控制电路是稳定性的保障。驱动电路中包含众多数字、模拟电路知识要点,本文以激光器驱动电路为基础,探讨如何结合激光器驱动电路研发数模电路实践课程的自主教学平台,通过这一平台帮助学生应用所学理论,将知识融会贯通。     

浅谈电路课程教学与科研案例的结合

"电路原理"是电气、电子信息类专业的重要专业基础课程。本文在"电路原理"课程教学中,强调将课程基础知识与前沿科研案例相结合,并以光伏电池的建模和仿真为例说明结合思路。实践表明,将课程基础知识与前沿科研案例结合对培养学生的研究能力,拓宽学生的学术视眼非常有利。     

基于虚拟仪器的增量型PID控制系统设计

利用图形化编程语言LabVIEW及其PID工具包能方便、高效地进行PID 控制器设计.若将其与传感器、信号调理电路、数据采集卡等硬件设备良好结合,即可构成基于虚拟仪器的控制系统.     

基于GIS的管网调度图形化应用

本文对基于GIS的管网调度图形化应用平台进行了架构及主要优点的介绍."基于GIS的管网调度图形化应用"在原水、供水等业务数据集成的基础上,采用GIS技术,改变传统的供水调度信息展示及管理模式,实现各类实时监测数据的接入与动态展示,实现基于图形化的供水调度辅助分析、辅助决策.     

集总参数电路与磁路、热路的关联性教学

本文采用类比和关联方法,拓展电路中集总参数思想。通过将磁路、热路中相应的物理量与电路中的电流、电势、电阻进行类比和关联,帮助学生理解集总参数模型思想,掌握各物理量的涵义。通过对具体用电设备电动机的简单建模分析,促使学生将集总参数模型在其它电、磁、热的分析中能够融会贯通,应用电路理论所学知识,建立合理的物理模型及分析解决问题。     

Multisim在竞争冒险教学中的应用

在数字逻辑课堂教学中,引入Multisim软件,结合逻辑电路实例讲述竞争冒险现象。利用Multisim软件中的虚拟元件建立示例电路的仿真模型,模拟电路的运行状况,生动地展示了竞争冒险的产生过程,使课堂教学更加地贴近工程实际,帮助学生更好地理解和掌握所学内容,对提高课堂教学效率,激发学生的学习兴趣有重要的意义。     

“电工学”课程的教学方法改革

本文结合了当前电工技术和电子技术发展的实际,对"电工学"教学方法方面进行了探索和研究,提出了要体现能力目标、知识目标,充分突出课程的实践性强的思路;探讨了多媒体教学为基础,项目教学为载体,点滴激励、实物展示、参观学习教学为辅助的教学方法。以便于学生自身的学习能力和创新能力的培养和提高。     

基于知识图谱的直升机飞行指挥模型研究

针对当前直升机飞行指挥效率低下、数据关系复杂和智能化层次低等问题,提出了基于知识图谱的直升机飞行指挥模型研究方法。使用知识图谱生成和展现等技术,对直升机飞行指挥专业领域的知识资源进行了深入分析与整合。将有价值的数据资源提炼成知识图谱,以图形化方式向用户展示经过分类整理的结构化知识,支持知识检索、知识可视化和知识推荐等应用服务。应用结果表明,该技术模型能够使指挥员、参谋直观准确定位和深度获取专业知识,增强了系统思维能力,能够促进直升机飞行指挥信息系统的革新。     

电路理论中线性耦合电感知识的补充

以电路理论课程的课堂教学知识为研究对象,指出在耦合电感知识部分现行教材不够充分的问题.解决的方法是补充一些知识,采用电磁学理论和数学证明的方法,结合能量守恒定律,对于补充的知识给予合理的叙述和证明.多年课堂教学的实践结果表明,这对学生全面理解这方面的知识有很大的帮助.     

知识融合型“电力电子技术”课程教学改革

电力电子变换电路的种类多样，工作模式时变，数学理论分析难度较大。提出的知识融合型课程改革，采用整体性学习方法，有机地将其它课程与“电力电子技术”建立联系。同时，辅之以图形化记忆法，将虚拟仿真与数学软件交互式绘图带入课堂。课堂授课表明，知识融合型教学改革能使学生触类旁通，主动探索未知知识，加深了对其它课程的理解，较快融入科研生产实际。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its