采用阶梯形微带馈线的高隔离度超宽带MIMO天线

提出了一种小型二端口超宽带(UWB)多输入多输出(MIMO)天线。该天线由两个相同的矩形单极子和缺陷地结构(DGS)组成,通过改进阶梯形微带馈电线,在介质基板底层和顶层添加H 形枝节,并在辐射贴片上添加矩形条,提高了天线的带宽和隔离度。实验结果表明:该天线在1~20 GHz 工作频带内的隔离度大于21 dB,包络相关系数小于0.02。实测与仿真结果相符,表明该天线适用于UWB MIMO 系统,且该天线结构紧凑,尺寸仅为22 mm×29 mm×0.8 mm,可用于便携式通信设备。     

一种具有三阻带和高频截止特性的超宽带天线

为了有效抑制超宽带(UWB)通信系统和窄带通信系统之间潜在的干扰,设计了一款具有三阻带特性和高频截止特性的超宽带天线。天线总尺寸为33 mm×19 mm×1 mm。该天线的辐射单元由一个椭圆形的单极子和一个倒梯形结构组成,由50的矩形微带线馈电,接地板由一个矩形和一个开槽梯形结构构成。对天线进行加工并测试。结果表明,该天线在3.3~3.6 GHz处的阻带由辐射单元上的凹形槽产生,5.15~5.35 GHz和5.725~5.825 GHz处的阻带由微带馈线两旁的U形寄生单元产生,10.8 GHz高频处的截止特性是由微带线两旁对称的凹形寄生单元共同决定的。天线的测试结果与仿真结果吻合良好。     

一种新型超宽带双陷波平面单极子贴片天线设计

设计一种新型双陷波超宽带单极子贴片天线,辐射贴片为酒杯型天线结构,采用对底部边缘开槽曲流的办法,实现了良好超宽带天线性能。同时对辐射贴片加载了U形和C形缝隙,分别在3.5 GHz和5.5 GHz处产生陷波。利用HFSS软件对所设计天线进行仿真验证,仿真结果与实测结果表明,该天线在超宽带范围内能有效抑制双陷波能力,并且在通带范围有良好辐射和稳定增益特性。其天线尺寸为33 mm×26 mm×0.74 mm,便于集成在电路系统中。     

一种小型的具有良好陷波特性的超宽带缝隙天线

 为了有效地抑制超宽带通信系统与窄带通信系统之间潜在的干扰,提出了一种小型的带组合陷波结构的缝隙超宽带天线.该天线采用印刷电路板上的多边形缝隙作为辐射单元,由背面的T形微带线馈电,天线的总尺寸仅为16mm×25mm×0.8mm.通过T形微带上开的一C形槽和地板上开的一矩形槽的组合陷波结构,产生阻带特性且阻带陡度更陡峭、带宽更宽,实现了良好的陷波功能.仿真和测试的结果表明,天线在超宽带系统3.1GHz~10.6GHz工作频段内的电压驻波比小于2,在5~6GHz频率范围实现了良好的滤波特性,有效地阻隔了无线局域网系统对超宽带系统的影响.同时该天线在整个工作频段具有良好的全向辐射方向特性和稳定的增益.     

一种紧凑型超宽带UHF天线设计

提出了一种尺寸紧凑的超宽带特高频(UHF)天线,该天线由微带单极子天线和寄生层组成。通过将单极子天线的矩形辐射贴片与圆环贴片结合、加载寄生贴片,以及对接地板进行开槽和切角,有效拓展了天线的带宽,并使其获得了超宽带特性。将印刷有双箭头金属图案阵列的寄生层放置在单极子天线下方可提高天线的增益,且阻抗带宽保持不变。该天线的整体尺寸为120 mm ×150 mm ×11.2 mm,反射系数S11<-10 dB的频率为0.64~7.00 GHz,最大增益为7.57 dBi,具有良好的全向辐射特性。对天线进行了加工与测试,测试结果与仿真结果基本一致,证明了仿真结果的有效性。     

超宽带阶梯形微带单极子天线的设计与研究

针对当前已有超宽带（ultra-wideband, UWB）微带单极子天线带宽窄、尺寸大等缺陷,设计了一款小型化UWB阶梯形微带单极子天线,采用开槽的矩形辐射贴片、阶梯形微带馈电线和缺陷地面结构(defected ground structure, DGS)实现良好的UWB特性. 对天线的回波损耗、电压驻波比（voltage standing wave ratio, VSWR）、辐射方向图及增益进行了仿真计算和优化设计,实测显示,天线的工作频段为2.6～22.1 GHz,增益最大值为12.9 dBi,仿真和实测结果基本吻合. 所设计天线结构简单、覆盖频率广、尺寸小、工作频带内具有良好的辐射特性,表明该天线适用于各种UWB通信系统中.     

一种陷波可重构的超宽带天线设计与研究

该文设计了一种具有四陷波及可重构特性的超宽带天线。通过在天线辐射贴片、微带馈线上刻蚀U形槽,以及在改进型地板上添加环形开口寄生单元来实现天线四陷波特性。采用在陷波结构中加入PIN二极管开关的方法实现陷波可重构特性,通过开关的断开与闭合,分别实现三陷波和四陷波特性,从而进一步提高了超宽带频段的利用率。分析了天线陷波产生的原理,研究了天线部分尺寸参数对陷波的影响。通过仿真和实物测量结果对比表明,该天线在3~11.74 GHz频段内可有效抑制窄带系统的干扰。天线尺寸为24 mm×16 mm×0.8 mm,结构较紧凑,可广泛用于各种超宽带通信系统。     

双频WLAN 印刷单极子天线

文中提出一种应用于无线局域网双频印刷单极子天线。该天线可以方便地植入无线通讯设备中,有较强的实用性。此天线由50Ω 的微带传输线通过耦合馈电的方式对具有对称结构的S 型贴片馈电。天线获得阻抗带宽可以覆盖无线局域网2.4/5.2/5.8。天线的总体尺寸为20 mm×34.5 mm,结构紧凑,易于加工,便于集成,适合无线通讯应用。文中给出了天线的设计及不同参数对天线性能的影响。     

一种新型具有陷波特性的宽带单极子天线

设计了一款新型的具有陷波特性的超宽带单极子天线。该天线的带宽为3. 1 ~ 12. 0 GHz,通过在矩 形辐射贴片上制作出对称的梯形结构、中心加载倒C 形缝隙、矩形开槽,并将窄矩形接地板切除两个边角,制作矩形 开槽结构,使得天线在3. 3 ~5. 35 GHz 频段产生陷波特性。该天线结构紧凑,尺寸仅为20 mm×25 mm×1. 0 mm。建 立天线模型,并对其进行仿真和优化。研究表明,天线在WiMAX 频段、C 波段、数字微波通信、大容量微波通信和部 分WLAN 等多个频段产生良好的陷波特性,且在工作频段内有良好的性能和辐射方向特性。     

共面波导馈电超宽带天线研究

设计了一种刻蚀在单层覆铜介质基板上的共面波导馈电超宽带天线。所用介质基板由相对介电常数为2.65的聚四氟乙烯制成,尺寸为35.0 mm×35.0 mm×1.6 mm。利用仿真软件HFSS对该天线的参数进行了仿真和优化,并根据优化参数进行了实物天线的制作和性能测试。结果表明,通过在共面波导地面上刻蚀非对称结构的多边形槽,可使天线的频带宽度达到2.2~8.0 GHz(S11<–10 dB),相对带宽达到114%。该天线具有良好的方向图和增益性能,满足超宽带天线的性能要求。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.