高重复率激光时间比对激光发射时序精确控制

我国空间站即将首次开展高重复率（~kHz）星地激光时间比对,搭载的星载探测器拟采用固定门控开启模式,对地面激光发射时序的控制提出了高实时、高重复率和高精度等要求。基于卫星激光测距（SLR）的距离门控原理,提出高重复率激光时间比对地面激光点火信号精确产生方法,以使上行激光脉冲能在门控信号之后短时间内到达星载探测器,极大减少噪声干扰。该方法可在单片可编程门阵列FPGA中实现,具有重复率大于10 kHz、控制精度5 ns以及软件交互简单等优势,结合方法计算精度和半导体泵浦激光器的纳秒级触发抖动,预计地面激光发射时刻精度最终控制在10 ns以内,满足空间站激光时间比对激光发射时序的控制需求,并可为其他激光时间比对工程的实施提供技术支持。     

LD紧耦合泵浦被动调Q微型激光器实验研究

设计一种用二极管直接端面泵浦的亚纳秒、千赫兹、千瓦级峰值功率的被动调Q激光器。首先根据激光振荡方程计算出激光器参数,由此设计了1.5 mm厚单块Nd∶ YAG与Cr⁴⁺∶ YAG键合晶体作为工作物质,然后用内蚀光栅LD作为泵浦源,在光学体积小于1 cm³条件下,获得重复频率8 kHz、峰值功率8.3 kW、脉冲宽度876 ps,M²=2的单纵模激光输出。     

全固化微脉冲Nd:YVO4激光器的研究

本文利用尾纤输出的半导体激光器泵浦Nd：YVO4激光晶体，获得连续的1064nm激光输出；进行腔内Cr^4 ：YAG晶体调Q和KTP晶体腔内倍频，获得了脉宽约40ns、平均功率107mw、重复率12kHz的532nm微脉冲激光输出。     

产品放送

Nd:YAG 激光器美国佛罗里达州Lee Laser公司推出的LDP-200MQG型二极管泵浦的倍频Nd:YAG激光器在532nm波长处能产生100W平均功率的激光输出。其光束质量M2<12,在脉冲重复频率10kHz时,输出峰值脉冲功率>50kW;脉冲重复频率为30kHz时,脉冲     

高重复率电光Q开关Nd:YAG激光器

研制了高重复率电光Q开关Nd:YAG激光器,激光谐振腔是曲率半径为10m的全反镜和反射率为4%的输出镜组成的平凹腔,选用2支脉冲氙灯(7mm×130mm)串联作为Nd:YAG激光棒(8mm×140mm)的泵浦源,电光晶体选用KDP。为了实现高脉冲能量、窄脉冲宽度和高重复率的激光输出,设计了新型的IGBT氙灯斩波放电电路和雪崩管电光Q开关电路。应用上述方法和装置,成功地获得了重复率3～20kHz、脉宽10～25ns、脉冲能量300～500mJ的重复率脉冲Nd:YAG激光。     

ⅡB型LBO光参量振荡器

二极管泵浦的Nd:YAG激光器美国加州圣克拉拉的Continuum公司推出的HPO-300型高功率二极管泵浦Nd:YAG激光器,在1064nm波长输出3mJ.该激光器重复率在1～300Hz可产生接近衍射极限的脉冲。     

端面抽运Nd:YAP/YVO4被动调Q 1.2 μm拉曼激光

报道了半导体激光端面抽运Nd:YAP晶体产生的1080 nm基频光驱动纯YVO₄晶体的被动调Q拉曼激光特性。利用初始透过率85%的Cr⁴⁺:YAG/YAG复合晶体作为可饱和吸收体,以a切YVO₄晶体的890 cm^-1拉曼频移为研究对象,研究了一阶斯托克斯光的输出功率和脉冲特性。在抽运功率为9.87 W时,获得了平均输出功率0.76 W的1195 nm一阶斯托克斯光,转化效率为7.7%。脉冲重复频率从阈值附近约3.7 kHz持续增加至33.5 kHz。最高抽运功率下,脉冲宽度为1.5 ns,对应最大单脉冲能量为22.8 μJ,最高峰值功率为15.2 kW。     

基于YAG/Nd:YAG/Cr4+:YAG键合晶体的被动调Q亚纳秒激光器

全固态被动调Q激光器有光束质量好、脉冲宽度窄、结构紧凑等特点，在雷达探测、工业制造等领域具有广泛应用前景。对YAG/Nd:YAG/Cr⁴⁺:YAG键合晶体被动调Q激光器的输出特性进行了理论和实验研究，在泵浦光中心波长为808 nm、光斑直径为230μm、泵浦功率为6.72 W的泵浦条件下，获得了平均功率1.41 W、脉宽736 ps，重复频率8.46 kHz的调Q激光输出。进一步研究表明，随着泵浦光焦点远离Nd:YAG端面，激光光斑的对称性下降；且泵浦光焦点离Nd:YAG端面的距离沿晶体轴向增大时，激光阈值呈上升趋势。     

基于FPGA的高重复率距离门控电路实现

 传统的距离门控电路多采用分立元器件,工作频率和控制精度均十分有限,难于满足重复频率高的测距需求。通过分析高重复率距离门控的时序,提出并实现了一种基于FPGA的高重复率距离门控电路方法。该方法充分发挥了FPGA在运算、存储、时钟管理等方面的优势：采用倍频模块产生的200MHz作为时钟基准,其门控输出分辨率达5ns;利用增强型并口（Enhanced Parallel Port,简称EPP）方式进行门控数据传输,以确保2kHz的高速门控信号输出。完成的距离门控板在上海天文台的高重频（2kHz）卫星激光测距（Satellite Laser Ranging,简称SLR）实验中获得应用,使上海天文台成为国际上少数掌握高重频SLR技术的台站之一。     

珠宝雕刻用LD泵浦被动Q开关YAG激光器研究

报道了利用连续激光二极管端面泵浦被动Q开关固体Nd:YAG激光器,研究设计了实用光学耦合系统,采用初始信号透过率为80%的Cr4+:YAG晶体实现被动调Q,采用平凹直线腔结构,高重复率调Q激光器中获得了稳定的1064nm窄脉冲激光输出.当泵浦功率为5W,重复率为5kHz时,获得的输出单脉冲能量平均为118μJ,脉冲宽度5 ns,光-光转换效率为15.7%.此性能激光器可用于珠宝雕刻等领域.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-