基于LabVIEW的DSO存储波形处理与分析

为了对DSO存储波形进行进一步的分析和处理,利用LabVIEW在工程应用和信号处理上的优势,编写了具有DSO存储波形显示、频谱分析、滤波处理、单频信息分析的多功能软件.结合实例对滤波处理和提取单频信息方法的处理结果进行了对比分析,根据两种方法的原理和优缺点,指出了各自的应用条件,可为工程中DSO存储波形的分析和处理提供指导.     

分析非线性电路的新波形平衡法

本文提出了一种新的分析单频激励或多 频激励非线性电路的波形平衡法。该方法利用线性网络的性质和相量的概念，直接在时域上建立电路的解析波形平衡方程，从而避免了对准周期信号进行离蕤 的时频域变换。     

大误差条件下单频干扰引起的伪码跟踪误差研究

单频干扰能够引起较大的伪码跟踪误差,基于小误差条件的跟踪误差分析会失效。在大误差条件下,由于码环鉴相器不再工作在线性区域,利用鉴相器输出的二阶泰勒展开式代替一阶线性化近似,该文给出了单频干扰下伪码跟踪误差的解析表达式。通过数值分析和仿真实验分析验证了在单频干扰下伪码跟踪误差随干扰起始相位、干扰频率和干信比的变化特性。结果表明:当干扰引起的伪码跟踪误差较大时,基于鉴相器线性化的理论预测的准确性显著下降,而基于鉴相器二阶泰勒近似的理论分析能够准确预测大误差条件下的伪码跟踪误差,在跟踪误差不超过0.34 chip时,理论分析误差不超过20%。     

基于双曲调频的组合波形设计研究

主动声呐通常采用的单频或调频波形时频耦合分辨能力弱，不利于混响背景下的信号检测与估计。先前工作表明，“V”和“W”形双曲调频(HFM)组合波形可以实现距离-速度高分辨和低混响输出，其中W-HFM波形还有效解决了V-HFM波形在多目标场景中的虚假目标问题，但是设计复杂、运算量大。为优化HFM组合波形的设计和应用，该文推导了HFM组合波形的峰脊线斜率表达式。一方面提出V-HFM波形的最小无虚警距离(MNFAD)指标，分析了其多目标适用性；另一方面以典型的W-HFM波形为例，提出了优化的波形设计方案，对工程应用具有指导意义。水池实验数据表明，HFM组合波形实现了距离-速度高分辨、混响输出降低5 dB以上，并且W-HFM波形还抑制了虚假目标干扰。     

基于PCI的宽带雷达信号源设计

信号产生技术是雷达研究中的一个重要部分。传统信号源在联调时一般是固定几组参数，通过外部选择实现多参数、多波形的输出，存在波形参数修改不便的缺点，本文介绍了一种基于PCI总线通用宽带雷达信号源的设计和实现方法，采用了专用的PCI接口芯片和FPGA结合，实现了接口芯片与DDS的时序控制逻辑，可直接产生单频、线性调频等多种信号；同时还介绍了WDM驱动程序和上层控制软件的编写。该信号源具有即插即用、软件灵活修改波形参数、通用性强的优点。     

单频脉冲光纤放大器中的SBS效应实验研究

为了研究受激布里渊散射(SBS)效应对单频脉冲光纤激光放大器中脉冲波形的影响,搭建了单频脉冲光纤激光放大器系统。实验中观测到脉冲波形的畸变,继续提高功率,畸变处出现峰值功率极高的尖峰,分析认为,光纤中的二次受激布里渊散射导致了尖峰脉冲出现。为验证这一结论,构造包含二阶Stokes波的耦合方程组,进行了模拟仿真。结果表明,该峰值功率极高的尖峰正是SBS效应的二阶Stokes波。     

QPSK相关检测系统蒙特卡罗仿真及其性能

根据蒙特卡罗仿真方法基本思想，分析了加性高斯噪声和单频干扰条件下的QPSK信号相位分布模型及其相关检测方法；讨论了加性噪声和单频干扰模型，建立了相关检测系统蒙特卡罗仿真模型，模型通过动态系统仿真软件SystemView的二次开发方法实现；进行了仿真电路设计与应用系统性能分析。     

基于AD9854的雷达信号源设计与实现

使用AD9854芯片和FPGA,基于DDS理论设计并实现了多模式多波形雷达信号源。它可模拟LFM、NIJM、单频、相位编码等多种脉冲信号波形,能有效验证脉冲压缩与信号处理单元的工作性能。测试结果表明,该系统能满足设计要求。     

JTIDS系统抗干扰性能仿真

针对联合战术信息分发系统（JTIDS）物理层传输波形建立了MATLAB仿真模型,并对其抗白 噪声干扰、单频或阻塞式干扰,以及组网的性能进行了仿真和分析,为JTIDS系统抗干扰技 术的研究提供参考。     

瞬态激励下圆盘轴向电磁能量的流动规律

本文给出了在瞬态均匀电流分布激励下，圆盘轴线上能量衰减的精确解。当激励波形选用矩形脉冲，且τ＜ａ／ｃ时，在靠近源的区域内在一个能量上升阶段，在达到最大值之后能量开始慢衰减，到无究远处时即成为球面波衰减；无衰减区域是不存在的；能量上升阶段的范围决定于天线的尺寸以及脉冲的宽度。文中还给出了单频信号激励下，轴线附近的功率流线管。单频解表明：在靠近源的区域内存在一振荡区域，其幅度呈上升趋势，与Ｓｉｌｖｅｒ     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-