在Ad Hoc网络中TCP-SACK性能研究及改进

在Ad Hoc网中,经常发生链路失效和路由变化。TCP把数据包的丢失归结为链路拥塞,所以TCP在Ad Hoc网中表现很差。在本文中通过应用一种新的方法,基于传输包乱序检测与响应方法,研究TCP在Ad Hoc网中的性能。通过实验结果表明,此算法解决了,提高了网络的吞吐量。     

Ad Hoc网络中TCP协议的性能及其改进策略

Ad Hoc 网络的动态自组织特性使得传统的传输层协议不再适用。文中首先阐述 TCP 协议在 Ad Hoc 网络中存在的问题,然后介绍 TCP 协议在无线网络中的改进,接着详细分析 Ad Hoc 网络中 TCP 协议的性能并讨论其改进策略和方法,最后对全文进行小结,并指出今后的工作方向。     

Ad Hoc网络中SNMP代理的研究和实现

研究了在基于TCP／IP体制的Ad Hoc网络中,利用简单网络管理协议SNMP和网管代理解决严重和复杂的网络管理问题。在分析SNMP协议工作原理的基础上,探讨了SNMP代理的工作流程、组成模块和实现方式,并搭建Ad Hoc网络实验环境进行了测试验证。实验结果表明,通过SNMP协议和代理,能够有效管理和控制Ad Hoc网络中的关键参数,降低了系统的复杂程度和技术风险。     

吉比特网络CUBIC拥塞控制算法仿真研究

分析了TCP RENO的不足,比较了BIC算法和CUBIC算法,采用响应函数理论比较了三种TCP算法.在吉比特网络环境下对CUBIC算法进行了仿真.仿真研究表明,CUBIC算法能在高速网络环境中有效的提升网络速度,在拥塞丢包严重,网络流量很低时快速恢复网络速度;同时因为拥塞窗口波动太大,高速TCP流的吞吐量变化太大,带宽的利用率很不稳定.     

Ad Hoc网络中TCP协议性能分析及其改进策略

TCP协议是传输层最为重要的协议之一,也是因特网实现的关键.但是由于TCP是为有线网络设计的,它固有的机制无法适用无线网络,改进TCP使其适应蓬勃发展的无线网络成为一个迫切需要解决的问题.首先阐述了TCP协议在Ad Hoc网络中存在的问题,然后介绍了TCP协议在无线网络中的改进.接下来,详细分析了Ad Hoc网络中TC...     

传输层网络编码性能分析

底层网络随机丢包导致的传输控制协议(TCP)传输性能恶化的问题由来已久.为了保障TCP的吞吐量在无线网络环境下依然能够保持在较好的性能,通过分析传输层网络编码(TCP/NC)协议的基本原理,分别利用NS-2搭建了软件仿真平台和Wi-Fi开发板搭建了硬件仿真平台.在2种平台上分别测试了传输层网络编码的性能并且分析了TCP的拥塞窗口和吞吐量性能.实验结果表明:传输层网络编码能够有效克服底层的随机丢包带来的影响,提升TCP吞吐量.     

TFRC协议在Ad Hoc网络中的改进及仿真

由于TFRC协议不适合Ad hoc网络环境,这将限制TFRC协议在Ad hoc络中的应用。针对TFRC协议在Ad hoc网络中存在的问题,本文在TFRC算法的基础上提出了一种基于丢包区分机制的TFRC拥塞控制策略,它不仅考虑到了差错误码,切换、连接中断引起的丢包对传输的影响,而且还考虑到了实际的链路本身的差错控制导致的乱序包对算法性能的影响,解决TTFRC算法在Ad hoc网络中因不能正确区分拥塞丢包和误码丢包而造成性能下降的问题,改善TTFRC在Ad hoc网络中的性能。仿真结果表明改进协议的性能优于TFRC。     

基于带宽测量技术的TCP拥塞窗口在线学习方法

为了改进传输层协议提高吞吐量,本文提出了一种基于ACK时间间隔的在线学习方法（TCP-Learning）,该方法采用可用带宽测量技术,快速学习网络链路中可用剩余带宽并能够迅速调整TCP拥塞窗口。仿真结果表明,在链路处于良好状态下,TCP-Learning吞吐量略优于Reno和Vegas等传统拥塞控制算法,但在链路较差情况下,TCP-Learning吞吐量明显优于Reno和Vegas等传统拥塞控制算法。     

Ad Hoc网络负载均衡路由协议研究

网络负载是影响Ad Hoc网络性能的重要因素,网络负荷比较重时,局部的拥塞将导致网络性能的下降,分析研究现有负载均衡路由协议,并利用链路层信息,结合原Ad Hoc路由协议AODV提出了一种跨层负载均衡的路由协议方案,在选路过程中引入负载均衡机制,均衡网络流量,以提高网络时延、分组到达率等性能.最后用NS2软件仿真证明了改进路由算法的优越性.     

卫星网中基于时间戳的TCP拥塞控制算法研究

TCP(传输控制协议)拥塞控制机制直接使用在卫星网中存在很多不足。针对卫星网通信时延长、网络环境变化复杂的特点，利用TCP协议中的时间戳扩展选项，设计实现了一种改进的TCP重传和拥塞控制算法，能够根据RTr(Round Trip Time，往返时间)的变化对网络情况进行预测，从而及时重传数据包并调整窗口大小，仿真实验证明改进算法能够很好地提高TCP性能。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its