视频编码技术的专利状况分析

随着数字视频技术在通信、计算机以及广播电视等领域的广泛应用,涉及视频编码技术的专利申请量自2000年开始迅速增长。基于视频编码技术领域的专利文献,给出了对该领域专利总体变化情况的统计分析结果。针对视频编码技术的发展情况、重要申请人的专利特点以及专利发展趋势进行了详细的分析和深入的研究。     

视频转码技术的中国专利申请分析

基于在中国申请的与视频转码技术相关的专利文献,对该领域的专利申请情况进行了统计分析,重点分析了申请人的地区分布情况以及国内外申请人专利申请数量的年度变化趋势,分析了分布情况和相关趋势的产生原因以及对中国企业和科研机构的启示.     

远程监控设备专利分析

随着远程控制技术以及计算机网络技术的高速发展,远程监控设备日益受到重视,成为研究的热点,近十几年来专利申请量有了飞速增长.本文通过对远程监控设备的国内专利申请从宏观角度在年度申请量、申请人分布情况、技术领域进行了分析,并对主要申请人在该领域专利申请的特点进行了阐述,最后分析了目前远程监控设备的研究方向.     

人脸识别技术专利分析

随着图像图形处理技术的发展,人脸识别技术日益受到重视,成为研究的热点,近十几年来专利申请量有了飞速增长.本文通过对人脸识别技术的国内专利申请从宏观角度在年度申请量、申请人分布情况、技术领域进行了分析,并对主要申请人在该领域专利申请的特点进行了阐述,最后分析了目前人脸识别技术的研究方向.     

“人脸识别”在国外智能视频监控领域专利分析

在国外智能视频监控领域的专利申请进行检索基础上,分析人脸识别技术在专利申请量趋势、技术原创国和目标国、主要申请人等方面的特点,对人脸识别技术的发展特点做出论述,以供国内智能视频监控领域的申请人和发明人进行参考.     

关于可视电话的专利分析

随着芯片技术、传输技术、数字通信、视频编码技术和集成电路技术不断发展并日趋成熟,适合商用和民用的可视电话浮出水面,走上人们的视野.在中国,关于可视电话的专利申请从20世纪90年代初开始出现,到21世纪开始数量上升较快,很明显,各大企业和机构已经纷纷展开了对该技术的专利部署.从可视电话技术的发展现状、专利申请年度分布情况、专利申请的IPC分布、申请人排名、专利申请区域分布等,进行了多视角的专利分析.     

智能云电视终端设备专利分析

随着三网融合技术的发展,智能云电视终端设备日益受到重视,成为研究的热点,近十几年来专利申请量有了飞速增长.通过对智能云电视终端设备的国内专利申请从宏观角度在年度申请量、申请人分布情况、技术领域进行了分析,并对主要申请人在该领域专利申请的特点进行了阐述,最后分析了目前智能云电视终端设备的研究方向.     

立体视频编码技术的专利申请分析

立体视频编码技术通过挖掘多个视点之间的时空相关性对立体视频进行编码,以提高传输和存储性能,是目前电视技术的研究热点。关注立体视频编码技术的专利申请,基于CPRSABS(中国专利检索系统文摘数据库)和VEN(虚拟外文数据库)数据库中3D编码技术领域的专利文献,从年度申请数量、申请人总体情况、公司方面专利情况以及科研院所方面的专利情况进行多角度分析,并总结关于3D编码的专利申请特点。     

移动支付相关技术与专利分析

随着互联网购物高速发展和智能手机的全面普及,移动支付被广泛使用.检索了移动支付的专利申请文件,从专利角度分析了移动支付所采用的各种技术.同时通过对中国移动支付技术的专利申请趋势、专利分布和重要申请人的专利布局进行分析,得出了不同申请人在移动支付领域的研究方向.通过分析,可以了解移动支付所采用的各种技术以及相关公司的专利布局,为该领域的研究方向提供参考.     

视频图像液位测量技术的专利分析

液位测量技术被广泛应用到多个领域中,尤其在涉及易爆、易挥发、强腐蚀及有毒性液体的液位测量时,给传统的液位检测带来一定难度,随着利用高分辨率视频图像传感器进行测量液位的微小变化成为可能,为液位测量提供了新的手段.针对视频图像液位测量技术的特点、国内外专利申请情况、重要申请人的特点、专利发展趋势进行了分析和研究,为我国视频图像液位测量技术的发展方向和专利布局提供参考.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its