太赫兹波在二维正方晶格光子晶体中的传播特性

本文用平面波展开法研究了太赫兹波(THz)在二维正方晶格光子晶体中的传播特性。分析了晶格常数为a=0.1mm的正方晶格介质柱二维光子晶体,在0~1.8THz频段范围内,通过数值计算,发现当介质圆柱半径r=0.2a时,E偏振出现最大绝对光子带隙,带隙位于0.283-0.400THz,带隙宽度为0.117THz,相应的带隙波长范围为84.9μm至120μm,处于THz波段,并分析了随着相对介电常数差值的增大出现的TM带隙宽度增大。研究结果为THz器件的开发提供了理论依据。     

正方形具有缺陷结构二维光子晶体结构参数对本征模的影响

由于正方形二维光子晶体具有光子禁带,所以在光子晶体缺陷处可形成对光子束缚的缺陷本征模.本征模的频率应在光子禁带频率范围内,而光子禁带频率又取决于光子晶体的结构参数.通过有限元法数值计算得到并图示了正方形具有缺陷结构二维光子晶体本征频率和介质柱半径、晶格常数以及介质柱介电常数之间的关系.利用这些关系当增大介质柱半径而相应减小介质柱介电常数时,本征频率将会保持不变.此外由于光子晶体结构参数的不同,本征模对应的电磁场在晶体中的分布也不同,文中图示了电场强度的大小在一些结构中的分布.     

THz波段光子晶体谐振腔的特性分析

提出了一种适用于太赫兹器件的二维光子晶体谐振腔,分析了这种谐振腔的主要特性.采用平面波展开法进行仿真计算,通过改变二维光子晶体的晶格常数、介电常数比、填充率等研究其带隙结构、谐振频率在THz波段的变化规律.研究结果为THz波段器件的制作及THz系统的应用提供了理论依据.     

大带隙2维正方晶格光子晶体的优化设计

为了研究2维正方晶格光子晶体的完全带隙特性,采用平面波展开方法模拟了两种结构2维光子晶体,在固定光子晶体周期常数a的前提下,研究了2维正方晶格光子晶体的完全禁带随柱半径和折射率的变化规律。结果表明,以空气为背景的锗介质柱组成的光子晶体,随着半径的增大,完全带隙宽度先增大后减小最后消失,填充比为38.3%时,同时增大介质柱的介电常数,在介质柱折射率为4.2处,完全带隙最大,带宽是0.02754(ωa/(2πc));以锗为背景的空气柱组成的光子晶体,光子禁带对应的无量纲频率随半径的增大而增大,填充比为48.3%时,同时增大背景介质的介电常数,出现多个完全带隙,在背景折射率为6.2处,完全禁带最大,带宽为0.02922(ωa/(2πc))。光子晶体带隙的频谱响应也表明了完全带隙的范围。这为大带隙2维正方晶格光子晶体的设计和制备提供了依据。     

二维光子晶体透射特性的FDTD数值研究

把时域有限差分方法(FDTD)用于二维光子晶体透射特性研究,计算后得到多种情况下二维光子晶体的透射系数与入射光频率的关系曲线,结果表明,禁带的宽度和位置与组成二维光子晶体的晶格结构和介电常数等因素有关,介质柱半径变大则禁带变宽且禁带的中心频率变大,介质柱的介电常数与本底材料的介电常数相差越显著越有利于形成禁带,降低结构的对称性,禁带宽度增大.     

锥台型光子晶体在太赫兹波段的透射特性

设计一种工作于太赫兹波段的锥台型光子晶体,利用CST软件研究了光子晶体的禁带特性。通过在0.3~1 THz范围内进行模拟仿真得出,锥台型光子晶体存在光子禁带。与普通的圆柱形光子晶体进行了对比,并对不同的参数进行仿真发现:禁带范围会随着参数的改变而整体移动,其中取锥台顶部半径0.05~0.1 mm间隔0.01 mm,发现随着锥台顶部圆的半径的减小,禁带向高频方向移动。取晶格常数0.2~0.3 mm间隔0.05 mm发现随着晶格常数的增大会使禁带向低频方向移动。研究结果为太赫兹光子晶体波导研究提供理论依据。     

太赫兹波在二维三角晶格光子晶体中的传播特性

用平面波展开法研究了太赫兹波在二维三角晶格光子晶体中的传播特性。数值计算了以硅为背景的空气圆柱构成的二维三角晶格光子晶体的能带结构和态密度,计算表明r=0.50a和r=0.46a时,E偏振和H偏振分别出现最大光子带隙,带隙宽度分别0.1097THz和0.1935THz,在r=0.48a出现最大完全光子带隙,带隙宽度为0.0759THz,光子晶体态密度的分布也表明了存在光子带隙的范围,研究结果为太赫兹器件的开发提供了理论依据。     

2维超晶格结构光子晶体传输特性研究

为了研究超晶格结构对光子晶体禁带的影响,应用时域有限差分法对圆/椭圆、圆/复合柱超晶格结构光子晶体的传输特性进行了计算,得到了相应的透射谱.结果表明,对圆/椭圆超晶格,禁带宽度随椭圆柱截面积的增大而变宽,中心频率变大;对于圆/复合柱超晶格结构,椭圆柱内接于圆孔时,禁带宽度随截面积的增大而变窄,中心频率变小;当长轴垂直入射波方向时,高频段出现较宽禁带,低频禁带完全消失;而椭圆孔中内嵌圆柱时,禁带宽度变化与前者相反.该研究为光子晶体器件的制作提供了理论依据.     

太赫兹波段正方晶格二维光子晶体传输特性的研究

应用平面波展开法研究太赫兹波段正方晶格二维光子晶体的传输特性,数值模拟得到了太赫兹波段圆柱组成正方晶格二维光子晶体的带隙变化和能态密度的分布规律,根据计算结果设计了（0.485~0.503）THz波段的滤波器。并且分析了当圆柱发生微小改变形成椭圆柱正方晶格二维光子晶体时的带隙特性,研究结果为太赫兹器件的开发提供了理论依据。     

二维介质圆柱型光子晶体完全禁带与结构参数的关系

利用Bandsolve软件分别优化计算得到GaAs、Si、Ge三种材料的二维介质圆柱型光子晶体完全禁带与晶格结构、填充比、介电常数比三个主要影响因素之间的关系。研究发现,当填充比(r／a)介于0．1～0．5时,对于六边形晶格,三种材料都不存在完全禁带;四边形晶格,Ge存在较窄的完全禁带,GaAs和Si不存在完全禁带。对于蜂窝形晶格,当填充比介于0．18～0．5时,三种材料均存在较大的完全禁带,而且,介电常数比越大,完全禁带宽度越大。所得结果对二维介质圆柱型光子晶体的制作和进一步应用研究奠定了理论依据。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-