全相位数字滤波

本文提出全相位DFT数字滤波器,全相位FIR滤波器及全相位FFT频谱分析.全相位数字滤波器它有良好的滤波器频率特性,适用於频谱分析,多路复用和扩频通信中窄带干扰抑制等频域自适应滤波器.     

基于全相位的自适应数字滤波器设计方法

针对通常情况下滤波器引起的相移问题,概述零相位数字滤波的重要意义。并在介绍传统零相位数字滤波器设计(FRR和RRF)原理和方法的基础上,提出了一种新的零相位数字滤波器的设计原理和方法——全相位方法。通过仿真实验将传统的设计方法与此新设计方法给予了验证,使数字信号处理中滤波器引起的相位失真问题得到很好的解决。说明全相位方法是一种很好的零相位数字滤波器的设计方法,全相位数字滤波器它具有良好的滤波频率特性,适用于频谱分析,多路复用和扩品通信中窄带干扰抑制等频域自适应滤波器。并且将全相位法应用于自适应滤波器。     

巴特沃斯数字陷波滤波器的设计

随着数字技术的发展,数字滤波器在许多领域得到广泛的应用。研究一种在Matlab语言环境下设计IIR数字陷波滤波器的方法,在数字陷波滤波器设计过程中,先进行模拟低通滤波器的设计,然后进行模拟低通/模拟带阻滤波器转换,最后采用双线性变化法将模拟陷波滤波器转化成数字陷波滤波器。提出一种用所有零点和极点来表达数字陷波器传递函数的方法,同时给出以巴特沃斯模拟低通为原型设计数字陷波滤波器的程序。     

一种基于循环移位图的全相位DFT数字滤波器频率响应的求取法

本文提出了一种新型的全相位DFT数字滤波器频率响应的求取方法—循环移位图法,它是基于全相位滤波器和原有FIR滤波器的相互关系而构造的,充分体现了Fourier变换的循环移位性质和卷积窗的关系。该方法直观,深刻反映了全相位滤波器的内在机理。文中以N=3为例,说明了全相位滤波器的衍生过程。并以N=7阶全相位滤波器为例,分别在无窗、单窗和双窗条件下,推导出了全相位滤波器频率响应的数学表达式,并且用该表达式结合实验结果解释了全相位滤波器的优良特性。然后分别用所有数字角频率的正弦信号对全相位数字滤波器进行仿真实验测试,该仿真实验证明:测试出的频率响应曲线和理论推导完全一致。本文最后还推导出任意阶、任意种加窗方式下的全相位数字滤波器的频率响应公式。     

基于全相位幅频特性补偿的FIR滤波器设计

提出一种基于全相位幅频特性补偿的FIR滤波器设计算法,此方法可通过设置频移参数λ来控制边界频率。该方法采用了偶对称的频率采样模式,对两个子滤波器作了反向的相移处理,另外还构造了一全相位单窗滤波器用于幅频特性补偿,再将此补偿滤波器和各子滤波器进行组合即可形成各种低通、高通、带通、陷波类型的滤波器。     

模块法设计FIR数字陷波器的一种新方法

在模块法设计ＦＩＲ数字滤波器的基础上，提出一种设计ＦＩＲ数字陷波器的新方法。该方法将数字陷波器等效成为一个全通滤波器减去一个由基本频率单元构成的点通滤波器，进而推导出计算数字陷波器冲激响应的数学公式。该方法具有公式简单、物理概念清晰，陷波点频率不受模块数取整的约束，便于连续控制陷波点频率的优点。与窗口法设计相比，在同等凹口宽度下具有阶数减半的优点。同时，该方法可以推广至带阻滤波器的设计。     

DFT域全相位数字滤波器的设计与实现

本文给出了一种带双窗的频域全相位数字滤波器结构,经过理推导得到与其等效三种实现形式。对系统特性的分析结果表明,双窗全相位数字滤波器在通带和阻带内的波纹基本消除并且可以方便地设计各种滤波器;最后通过仿真实验,验证了理论推导的正确性和全相位数字滤波器的实用性。     

基于全相位的零相位数字滤波器的设计方法

针对通常情况下滤波器引起的相移问题,概述零相位数字滤波的重要意义。并在介绍传统两种零相位数字滤波器设计(FRR和RRF)原理和方法的基础上,提出了一种新的零相位数字滤波器的设计原理和方法全相位方法。通过仿真实验将传统的两种设计方法与此新设计方法给予了验证,使数字信号处理中滤波器引起的相位失真问题得到很好的解决。说明全相位方法是一种很好的零相位数字滤波器的设计方法,同时还克服了传统设计方法物理上无法实现的弊端。最后,将此全相位方法与传统方法作了分析,并介绍了全相位作为一种全新数字滤波器设计方法的应用领域。     

线性相位FIR滤波器的设计

论述用软件来实现线性相位ＦＩＲ数字滤波器的方法。先推导线性相移ＦＩＲ滤波器要满足的条件，说明当ｈ（ｎ）为偶对称或奇对称时，都能具有严格的线性相位。为达到这个目的，采用了将无限长序列变为有限长序以及将非因果序列变为因果序列的设计思想，并给出了设计实例，最后讨论了改善频率特性的主要途径。实践证明，这种设计方法简单，方便实用。     

基于全相位陷波器解析设计的啸叫去除

为了快速且精准地抑制助听器中的啸叫效应,该文提出一种中心频率可以精确控制的全相位有限脉冲响应(FIR)陷波器解析设计.首先,为了获得较高的陷波精度,引入了整数部分m和小数部分λ来控制陷波的中心频率.然后,设计了一个偶对称的闭式解析式来计算陷波器系数.最后,为了保证输出信号的连续性和线性相位,进行数据延拓和截取操作.该陷波器具有线性传输特性,避免了非线性失真.为了检验陷波器的滤波性能,将其应用在助听器中去除啸叫.实验结果表明,该滤波器在啸叫频率下的衰减值可达–330 dB,信噪比达22 dB,输出波形质量好,算法复杂度低,鲁棒性高,具有一定的应用前景.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-