共查询到20条相似文献,搜索用时 125 毫秒
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Jun Pan Guofu Niu Jin Tang Yun Shi Joseph A.J. Harame D.L. 《Electron Device Letters, IEEE》2003,24(12):736-738
A new substrate current-based technique for measuring the avalanche multiplication factor (M - 1) in high-speed SiGe heterojunction bipolar transistors (HBTs) is proposed. The technique enables M - 1 measurement at high operating current densities required for high-speed operation, where conventional techniques fail because of self-heating. Using the proposed technique, M - 1 was measured up to 10 mA//spl mu/m/sup 2/ on SiGe HBTs featuring 120 GHz peak f/sub T/ which occurs at J/sub C/ about 7 mA//spl mu/m/sup 2/. Implications for circuit applications are also discussed. 相似文献
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提出了一种硅锗异质结双极型晶体管(SiGe HBT)非准静态效应的小信号等效电路模型的参数提取方法。整个参数提取过程建立在由非准态效应的小信号等效电路推导出的一系列泰勒级数解析公式并结合参数直接法,该方法依赖于测量的S参数,不使用任何的数值优化法,参数提取结果使用CAD仿真验证。结果表明该参数提取方法简单易行,较为精确,该方法能够用到不同工艺SiGe HBT参数提取。 相似文献
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对硅锗异质结双极型晶体管(SiGe HBT)等效高频噪声模型进行了研究,在建模过程中,SiGe HBT的等效电路为小信号准静态等效电路,使用二端口网络噪声相关矩阵技术从实测噪声参数提取基极和发射极的散粒噪声,提取结果与几种散粒噪声模型进行对比分析,重点研究半经验模型建立过程,对半经验模型与常用的噪声模型使用CAD仿真验证,结果表明了半经验模型的有效性、更具准确性,该半经验模型能够用到不同工艺SiGe HBT的高频噪声模拟。 相似文献
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Yo-Sheng Lin Shey-Shi Lu 《Electron Devices, IEEE Transactions on》2005,52(1):132-136
The anomalous dip in scattering parameter S/sub 11/ of SiGe heterojunction bipolar transistors (HBTs) is explained quantitatively for the first time. Our results show that for SiGe HBTs, the input impedance can be represented by a "shifted" series RC circuit at low frequencies and a "shifted" parallel RC circuit at high frequencies very accurately. The appearance of the anomalous dip of S/sub 11/ in a Smith chart is caused by this inherent ambivalent characteristic of the input impedance. In addition, it is found that under constant collector-emitter voltage (V/sub CE/), an increase of base current (which corresponds to a decrease of base-emitter resistance (r/sub /spl pi//) and an increase of transconductance (g/sub m/)) enhances the anomalous dip, which can be explained by our proposed theory. 相似文献
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In this article, a simple method for the small-signal equivalent-circuit modelling of SiGe heterojunction bipolar transistors (HBTs) fabricated with a 0.13-μm BiCMOS technology is proposed. The presented transistor model is compatible with BiCMOS processes and takes into account the parasitic effects such as substrate effect and the extrinsic capacitances. The parameter-extraction approach is based on the analytically derived equations in conjunction with the optimisation technology. The intrinsic parameters are described as the function of extrinsic resistances. The extrinsic resistances are iteratively extracted by the variance of the intrinsic elements as an optimisation criterion. The proposed modelling approach is validated by SiGe HBTs with 0.2 × 5.9 μm2 emitter occupying area from 50 MHz to 40 GHz. The agreements between the measured and modelled data are excellent in the desired frequency range over a wide range of bias points with different bias conditions. 相似文献
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Han-Yu Chen Kun-Ming Chen Guo-Wei Huang Chun-Yen Chang 《Microwave and Wireless Components Letters, IEEE》2006,16(6):321-323
In this letter, an improved method for substrate network parameter extraction of SiGe heterojunction bipolar transistors (HBTs) is proposed. It is found that, without taking the intrinsic circuit elements into consideration, the conductance of substrate network will be underestimated while the susceptance of substrate network will be overestimated. Therefore, an iteration procedure is developed to determine the intrinsic circuit elements of SiGe HBTs first. The intrinsic circuit elements are then applied to remove their influence on the substrate network parameter extraction. Compared with the conventional method, the proposed one can avoid some unphysical modeling results and provide reliable substrate network parameters. 相似文献
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Olvera-Cervantes J.-L. Cressler J.D. Medina-Monroy J.-L. Thrivikraman T. Banerjee B. Laskar J. 《Microwave Theory and Techniques》2008,56(3):568-574
We present a new analytical direct parameter-extraction methodology for obtaining the small-signal equivalent circuit of HBTs. It is applied to cryogenically operated SiGe HBTs as a means to allow circuit design of SiGe HBT low-noise amplifiers for cooled radio astronomy applications. We split the transistor into an intrinsic transistor (IT) piece modeled as a Pi-topology, and the quasi-intrinsic transistor (QIT), obtained from the IT after that the base resistance (Rb) has been removed. The relations between Z-Y-parameters of the IT and QIT are then established, allowing us to propose a new methodology for determining Rb. The present extraction method differs from previous studies in that each of the model elements are obtained from exact equations that do not require any approximations, numerical optimization, or post-processing. The validity of this new extraction methodology is demonstrated by applying it to third-generation SiGe HBTs operating at liquid-nitrogen temperature (77 K) across the frequency range of 2-22 GHz. 相似文献
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Washio K. Ohue E. Shimamoto H. Oda K. Hayami R. Kiyota Y. Tanabe M. Kondo M. Hashimoto T. Harada T. 《Electron Devices, IEEE Transactions on》2002,49(2):271-278
A technology for combining 0.2-μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistors (HBTs) with CMOS transistors and high-quality passive elements has been developed for use in microwave wireless and optical communication systems. The technology has been applied to fabricate devices on a 200-mm SOI wafer based on a high-resistivity substrate (SOI/HRS). The fabrication process is almost completely compatible with the existing 0.2-μm bipolar-CMOS process because of the essential similarity of the two processes. SiGe HBTs with shallow-trench isolations (STIs) and deep-trench isolations (DTIs) and Ti-salicide electrodes exhibited high-frequency and high-speed capabilities with an fmax of 180 GHz and an ECL-gate delay of 6.7 ps, along with good controllability and reliability and high yield. A high-breakdown-voltage HBT that could produce large output swings for the interface circuit was successfully added. CMOS devices (with gate lengths of 0.25 μm for nMOS and 0.3 μm for pMOS) exhibited excellent subthreshold slopes. Poly-Si resistors with a quasi-layer-by-layer structure had a low temperature coefficient. Varactors were constructed from the collector-base junctions of the SiGe HBTs. MIM capacitors were formed between the first and second metal layers by using plasma SiO2 as an insulator. High-Q octagonal spiral inductors were fabricated by using a 3-μm thick fourth metal layer 相似文献
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Kyungho Lee Kwangsik Choi Sang-Ho Kook Dae-Hyung Cho Kang-Wook Park Bumman Kim 《Electron Devices, IEEE Transactions on》2005,52(3):375-384
An improved direct parameter extraction method of SiGe heterojunction bipolar transistors (HBTs) for the vertical bipolar intercompany (VBIC)-type hybrid-/spl pi/ model is developed. All the equivalent circuit elements are extracted analytically from S-parameter data only and without any numerical optimization. The proposed technique of the parameter extraction, differing from the previous ones, focuses on correcting the pad de-embedding error for an accurate and invariant extraction of intrinsic base resistance (R/sub bi/), formulating a new parasitic substrate network, and improving the extraction procedure of transconductance (g/sub m/), dynamic base-emitter resistance (r/sub /spl pi//), and base-emitter capacitance (C/sub /spl pi//) using the accurately extracted R/sub bi/. The extracted parameters are frequency-independent and reliable due to elimination of any de-embedding errors. The agreements between the measured and model-calculated data are excellent in the frequency range of 0.2-10.2 GHz over a wide range of bias points. Therefore, we believe that the proposed extraction method is a simple and reliable routine applicable to the optimization of transistor design, process control, and the improvement of VBIC compact model, especially for SiGe HBTs. 相似文献
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Feng Yuan Jin-Wei Shi Zingway Pei Chee Wee Liu 《Electron Devices, IEEE Transactions on》2004,51(6):870-876
The integration of the photodetector is essential for optical communication chips. The heterojunction phototransistor (HPT) is integrable with the SiGe HBT process and can be modeled by a modified MEXTRAM model for the circuit simulation. The impact ionization to obtain an extra gain for the optoelectronic conversion and the "early voltage reduction" under constant illumination are well modeled in a modified model. The base recombination current (nkT current) and the substrate contact to enhance the HPT speed are incorporated in ac model. It shows a good agreement between measurement and simulation. 相似文献
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一种2.4 GHz全集成SiGe BiCMOS功率放大器 总被引:1,自引:0,他引:1
针对2.4 GHz 802.11 b/g无线局域网(WLAN)的应用,该文设计了一种单片全集成的射频功率放大器(PA)。由于在自适应偏置电路中采用异质结晶体管(HBT)和电容构成的简单结构提高PA的线性度,因此不增加PA的直流功耗、插损和芯片面积。在基极偏置的DC通路中采用电阻负反馈实现温度稳定功能,有效避免热崩溃的同时不引起射频损耗。采用了GRACE 0.18mSiGe BiCMOS 工艺流片,芯片面积为1.56 mm2,实现了包括所有偏置电路和匹配电路的片上全集成。测试结果表明,在2.4-2.5 GHz工作频段,PA的小信号S21增益达23 dB,输入回波损耗S11小于-15 dB。PA的 1 dB 输出压缩点的线性输出功率为19.6 dBm,功率附加效率为20%,功率增益为22 dB。 相似文献