不同采样体制对点目标的定量检测性能影响

围绕单采样和过采样扫描探测体制下的点目标定量检测性能,基于亚像元的采样模型,建立了一定分辨率条件下探测不同高度、尺寸目标的成像链路仿真模型,从目标信号采集能力、背景及杂波水平影响、检测能力和测量特性四个方面对比分析了相同瞬时视场的单采样、过采样以及两倍瞬时视场的过采样三种规格采样体制的目标检测性能.分析结果表明:相同瞬时视场的过采样比单采样更有利于目标信号的采集,检测能力更强,两倍瞬时视场的过采样对目标信号有抑制作用,不利于低信杂比情况下的目标探测;两种规格的过采样对背景信号及杂波均有抑制作用;两种规格的过采样对目标辐射强度都有明显的过采集误差,必须进行修正.     

过采样扫描探测性能对比分析

分析了单采样和过采样两种扫描探测体制的成像原理,并建立了扫描图像仿真模型.在不同云层杂波场景下从目标能量收集、背景杂波抑制和弱小目标检测三个方面对单采样和过采样扫描图像进行了对比分析.理论分析和仿真结果表明:过采样扫描探测体制更有利于收集目标能量,杂波抑制能力较优,对弱小目标的探测能力更强.     

过采样扫描探测性能对比分析

分析了单采样和过采样两种扫描探测体制的成像原理,并建立了扫描图像仿真模型。在不同云层杂波场景下从目标能量收集、背景杂波抑制和弱小目标检测三个方面对单采样和过采样扫描图像进行了对比分析。理论分析和仿真结果表明：过采样扫描探测体制更有利于收集目标能量,杂波抑制能力较优,对弱小目标的探测能力更强。     

常规采样与过采样点目标检测性能比较分析

对于红外扫描有效载荷等光电探测系统,瞬时视场的减小(提高分辨率)对抑制背景杂波、提高检测概率和降低虚警率具有重要意义。过采样技术一直是提高仪器成像分辨率时的研究热点。针对点目标探测系统,对常规采样和过采样两种采样体制进行了对比分析。结果表明,在响应的标准差、平均响应和超出率方面,过采样系统具有明显优势。     

基于时－空过采样系统的点目标检测性能分析

为了提高扫描成像系统对于点目标的探测性能,提出了时-空过采样点目标探测体制,并对其进行了目标检测性能分析。首先,分析了单采样体制在点目标探测中易存在跨像元导致的目标能量分散问题,以及探测器随机高强度噪声及空间质子流尖峰信号导致的虚警问题;然后,提出了用于点目标扫描探测的时-空过采样体制。最后,基于图像信噪比对相同光学系统下单采样和时-空过采样系统的目标检测性能进行了比较分析。分析结果表明,通过过采样方式能够实现目标能量集中到一个像元,保证了图像信噪比需求。通过高分辨率融合使得目标尺度大于噪声及尖峰的尺度,目标尺度最大扩展至3?3像元,基于目标空间相关的处理可以有效降低虚警,提升系统检测性能。     

基于时－空过采样系统的点目标检测性能分析

为了提高扫描成像系统对于点目标的探测性能,提出了时-空过采样点目标探测体制,并对其进行了目标检测性能分析.首先,分析了单采样体制在点目标探测中易存在跨像元导致的目标能量分散问题,以及探测器随机高强度噪声及空间质子流尖峰信号导致的虚警问题;然后,提出了用于点目标扫描探测的时-空过采样体制.最后,基于图像信噪比对相同光学系统下单采样和时-空过采样系统的目标检测性能进行了比较分析.分析结果表明,通过采样方式能够实现目标能量集中到一个像元,保证了图像信噪比需求.通过高分辨率融合使得目标尺度大干噪声及尖峰的尺度,目标尺度最大扩展至3×3像元,基于目标空间相关的处理可以有效降低了虚警,提升系统检测性能.     

动目标检测雷达相参体制分析

动目标检测雷达采用锁相相参或全相参两种体制信号。两种体制的动目标检测雷达消除地杂波的能力不一样，设计难易程度差别很大，雷达对分系统信号质量的要求以及两种体制分系统能达到的技术指标也不相同。     

背景杂波对红外成像系统性能的影响

结合红外成像系统的组成结构以及红外辐射信号的传递过程,给出了杂波的定义,即杂波是场景中包含的与目标信号相似的信号,同时分析了杂波的特征依赖性和相对性.基于杂波仅通过信号处理算法对目标信号产生影响的认识,给出了杂波影响下的系统探测性能模型,并与不考虑杂波时的系统探测性能模型进行对比,指出背景杂波导致的目标检测难度远远大于不考虑杂波的情况.系统的探测性能是目标、背景间均值、方差差异的复杂函数.     

采样定时偏差对无源雷达性能影响研究

外辐射源雷达利用第三方信号作为照射源来探测目标,参考通道中的信号重构和监测通道中的杂波抑制是外辐射源雷达信号处理流程中的关键部分。主要讨论了OFDM波形照射源信号,并从理论上分析了采样定时偏差在参考信号重构、时域杂波抑制和匹配接收性能的影响。理论分析和仿真表明,采样定时偏差的存在会减少重构后的参考信号和监测信号的相关性,降低时域杂波抑制性能以及匹配接收的目标信噪比。基于WiFi信号帧结构的特点,提出了一种对采样定时偏差估计和补偿的方法,并在实测数据中验证了该方法的有效性。     

基于深度卷积神经网络的红外过采样扫描图像点目标检测方法

针对红外过采样扫描成像特点,提出一种基于深度卷积神经网络的红外点目标检测方法.首先,设计回归型深度卷积神经网络以抑制扫描图像杂波背景,该网络不含池化层,输出的背景抑制图像尺寸与输入图像一致;其次,对抑制后的图像进行门限检测,提取候选目标小区域原始数据;最后,将候选目标区域数据依次输入分类型深度卷积神经网络以进一步判别目标、剔除虚警.生成大量过采样训练数据有效训练两个深度网络.结果表明,在不同杂波背景下,该方法在目标信杂比增益、检测概率、虚警概率和运算时间等方面,均优于典型红外小目标检测方法,适用于红外过采样扫描系统的点目标检测.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its