基于COTS构件组装的系统开发

基于构件的软件开发强调以集成为中心进行系统构造。文章介绍了构件及接口操作．定义了基于构件开发的相关概念，给出了构件配置算法，最后用一个实例说明了基于COTS构件的系统开发过程。     

基于PCA的实时人脸识别系统

人脸识别有着许多重要的应用,因此它在图像处理领域是一项重要的研究课题。本文介绍了在Open CV和c＋＋环境下开发的实时人脸识别系统的算法原理,给出了系统在静态和实时情况下的测试结果。     

人脸识别技术的门禁系统设计与实现

随着识别技术的不断成熟和计算机技术飞速发展,各种基于人体生理特征如指纹、手掌、声音、视网膜、瞳孔和面纹等识别技术纷纷从实验室中走出来.目前,从精确实用的角度来看,人脸识别技术是优于其它生物识别技术的身份鉴别方法.针对监控系统和防盗系统独立工作均具有一定的局限性,本文使用c++集成开发语言,结合先进的人脸识别技术和通信技...     

通过人脸识别技术限制重复投票的电子投票系统的设计

将人脸识别技术应用于电子投票系统中,限制重复投票行为.首先分析了该电子投票系统的结构,给出了人脸识别技术在限制重复投票行为中的应用场景.针对电子投票系统对人脸识别算法的需求以及投票人图像采集背景简单和光照变化较小的特点,分析了适用于本系统的基于AdaBoost的人脸检测方法以及基于特征脸的人脸识别方法,给出了通过OpenCV实现的基于人脸识别方法的身份认证子系统的设计流程,并介绍了基本投票子系统各模块的功能.最后对身份认证子系统的性能进行了分析.     

多尺度分块协同表示的选择性集成人脸识别算法

为了进一步改善人脸识别系统在小样本条件下的识别性能,本文在图像分块协同表示分类算法的基础上,提出了一种新的基于多尺度分块协同表示选择性集成的人脸识别算法。该算法首先通过对各个尺度下的图像子块进行总变差加权,突出具有鉴别能力的局部关键特征子块的判别作用;其次通过多尺度分块协同表示的选择性集成,显著地提高了分类器的泛化能力和稳健性。对于三种不同采集条件下涵盖各种光照、表情和姿态变化的标准人脸数据库进行数值实验,实验结果表明新算法比现有的稀疏表示分类算法具有显著的识别性能和鲁棒性。      

基于全变分模型的光照处理算法

针对人脸识别中的光照问题,本文提出了一种利用全变分模型的光照处理算法.该算法模型简单,需要设置的参数少,并能有效地减少光晕现象.算法首先利用全变分模型来估计图像中的光照成分,然后恢复出人脸的反射系数图,并以该反射系数图作为光照不变量进行人脸识别.实验表明,基于全变分模型的光照处理算法能有效地提高人脸识别系统在不同光线条件下的识别率.     

一种基于E-HMM的选择性集成人脸识别算法

基于嵌入式隐马尔可夫模型(Embedded Hidden Markov Model, E-HMM)的人脸识别方法的识别性能依赖于模型参数的合理选择。提出了一种基于E-HMM的多模型选择性集成人脸识别算法,选择出个体精度高且互补性强的模型来进行集成的人脸识别。实验结果表明,与传统的基于E-HMM的人脸识别方法相比,新算法不仅可以获得更好、更稳定的识别效果,而且具有更强的泛化能力。     

基于复杂背景下人脸图像识别相关算法的应用

针对人脸图像系统介绍了基于复杂背景下人脸图像识别算法的应用,针对人脸识别问题,研究信息融合在人脸识别方法中的应用.本研究工作通过改进的LBP模式进行人脸识别,把彩色图像与人体生理特征结合到一起进行分析,给出了改进LBP算法公式,通过LBP算法公式计算出权重值,达到了提高人脸识别鲁棒性的效果.     

嵌入式人脸识别系统设计与实现

本文是基于S5PV210嵌入式平台设计实现的人脸识别系统.在嵌入式设备上设计人脸识别系统不仅需要考虑识别的准确率,还需要考虑设备周围的环境变化对人脸识别的干扰.系统中采用Adaboost算法依据人眼部的haar特征检测人脸.通过LBP纹理特征提取结合SVM识别分类的方法识别人脸.经过系统测试,系统的识别率以及对光照变化的鲁棒性满足了一般的人脸识别身份认证的需求.     

有监督的无关性保局算法在人脸识别中的应用

特征提取是人脸识别过程中的一个重要步骤,是人脸识别算法有效性的关键.保局算法能保持数据的局部信息,但是没有考虑样本的类别信息,并且所得到的特征向量是相关的,因此容易造成数据冗余.针对这些问题,提出了基于有监督的无关性保局算法,实验验证了算法的正确性和有效性.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its