毫米波段非谐振型低副瓣波导缝隙天线的改进型设计方法（英文）

在毫米波段,为了更精确、快速地设计出非谐振型低副瓣波导缝隙天线,提出了一种改进型解析方法,具体方法为在传统的斯蒂文生公式引入一个修正因子。该修正因子可大幅度提高波导宽边上的径向缝隙偏移量的解析计算精度。一般情况下,传统斯蒂文生公式仅适用于长宽比大于10∶1的窄缝设计。而此方法则可用于低副瓣、长宽比接近4∶1的宽缝波导缝隙天线的快速设计。对修正公式进行了理论分析,并使用改进型公式,设计加工出了一个工作频率为60 GHz的波导缝隙原型天线,实测增益和副瓣电平分别为14.8 dB和-25 dB。仿真结果以及测试数据吻合良好,证实了此改进型方法的有效性。     

低副瓣基片集成波导缝隙阵圆极化天线

基于基片集成波导技术与标准印刷电路板工艺,实现了圆极化、低副瓣的平面缝隙天线阵列.辐射单元采用基片集成波导项层匹配缝隙对结构,行波式圆极化单元.辐射缝隙经过改进,单个辐射单元的反射系数均小于-30 dB.平面阵列采用基片集成波导低副瓣功分器馈电.文中给出了具体设计公式、方法和仿真结果.设计制作的16×16阵列在16.1 GHz频点上实测增益为30 dB,轴比为0.7 dB,副瓣小于-20 dB.     

一种X波段波导缝隙天线的设计与仿真

给出了波导缝隙天线设计步骤,设计一种X波段波导缝隙天线,计算了天线口径、波导数量、缝隙的单元数量、宽度、位置等参数,设计半高波导宽臂耦合谐振缝魔T和差器,在此基础上完成了天线设计。仿真结果表明,当中心频率为12 GHz时,和波束增益为28.9 dB,第一副瓣电平为-22.2 dB,所设计的天线形式可获得较好的和、差波束方向图、电压驻波比和增益等参数。     

新型X波段波导缝隙阵列天线的设计

为了克服传统波导缝隙阵列天线重量大、副瓣偏高等问题,提出一种小型化、低副瓣X波段波导缝隙阵列天线的设计方法。首先采用高斯分布实现其幅度加权,快速完成低副瓣波导缝隙阵列天线的设计;然后结合HFSS 软件对传统压缩波导的窄边尺寸进行优化,减小窄边尺寸;同时采用3D 打印技术制造ABS 塑料波导缝隙框架和金属电镀工艺实现天线的加工,通过仿真分析和实物加工测试验证了所设计天线的有效性。所设计的天线方位面副瓣电平可达到-25 dB 以下,重量从25 kg 减小到2.5 kg,减重比达到了90%。最后,详细分析了不同金属电镀层厚度对天线性能的影响。     

一种波导窄边裂缝天线缝隙倾角的改进方法

为减小波导窄边裂缝天线缝隙间互耦对天线性能的影响, 实现低副瓣的设计, 提出了一种倾角波动分布的设计方法.天线电流分布选用泰勒分布, 利用HFSS软件确定缝隙倾角初值, 在此基础上得到波动分布的倾斜角度, 并通过遗传算法对缝隙倾角进行优化.使用Matlab与HFSS软件联合仿真, 省略了建模、设置参数等大量操作, 提高了设计效率.基于此, 设计了一款长度为1.2 m的X波段波导窄边裂缝天线, 仿真发现副瓣电平比传统设计方法低2.17 dB, 加工了天线实物并进行了测试, 天线实测增益和副瓣电平分别为20.9 dBi和-28.7 dB, 验证了方法的有效性.     

波导窄边缝隙天线的研究和设计

波导窄边缝隙天线具有宽垂直波束、窄水平波束以及低副瓣的特性.这种形式的天线特别适用于船用导航雷达.选择了一种波导窄边缝隙天线,首先分析其理论模型,并给出理想的设计参数,再利用Ansoft公司的HFSS软件的参数扫描及优化功能,通过局部调整设计参数就可以方便地得到缝隙的谐振结构.利用这种设计方法可以快速得出所需要的低副瓣波导窄边缝隙天线,再通过增加反射板和极化栅等方法实现了完全满足使用要求的天线,并给出了相应的理论仿真和测试结果.     

基于波导缝隙阵列的新型太赫兹频率扫描天线

为缩短太赫兹系统成像时间,该文提出将频率扫描天线应用于太赫兹成像系统中,并设计了一种基于波导缝隙阵列的太赫兹频率扫描天线。该文采用泰勒综合法降低副瓣电平,通过软件仿真结合功率传输法设计最优的缝隙分布。太赫兹波导缝隙阵列天线具有加工简单、成本低的优势,通过太赫兹准光测试系统对天线性能进行测试,实测天线扫描角度可达40°,增益约为15 dB,副瓣电平抑制优于–20 dB。测试结果表明太赫兹波导缝隙天线具有扫描角度大和副瓣低的优良特性,在太赫兹成像和目标探测等领域有巨大的应用价值。      

新型快速波导缝隙天线设计方法

对馈电网络和天线的散射矩阵进行级联,推导了互耦条件下阵列天线输入端口散射参数和天线实际激励分布的计算方法。基于该方法,提出了一种新型快速波导缝隙天线设计方法,并设计了一副12 元宽边纵缝一维波导缝隙天线。测试结果表明,在9. 82 ~10. 21 GHz 内反射系数和副瓣电平分别优于-15 dB 和-28 dB。测试结果与计算、仿真结果吻合良好,验证了该方法的准确性和有效性。     

宽带单脊波导缝隙天线的设计

根据传输线方程推导了单脊波导辐射缝隙有源导纳的计算公式,结合三维电磁仿真软件HFSS提取了天线阵列中辐射缝隙的有源电导,设计了一个8元单脊波导缝隙线阵,实测结果表明,副瓣为-23.61dB,VSWR≤2时的相对带宽为8%,约为矩形波导缝隙天线的2倍。     

毫米波波导窄边斜缝驻波阵天线的设计

设计了一种毫米波段波导窄边斜缝驻波阵天线.根据选定的口径分布和缝隙电导函数计算缝隙初始尺寸,利用电磁仿真软件模拟实验过程,由仿真结果反演口径分布并与理论口径分布比较差异,从而调整优化各缝隙尺寸参数.设计了一列30个缝隙、分成8个单元、由波导直接馈电的驻波阵线源,在Ka频段驻波比小于1.5的相对带宽为10.2％.Taylor综合副瓣值为-22dB,仿真得到的最大副瓣为-21.4dB,波瓣宽度为2.94°,增益为21.71dB.讨论了相邻单元间公共壁厚对波束形状的影响及其修正方法,并对比讨论了交叉极化的抑制方法.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its