利用单片机构成的零漂动校正最佳增益放大器

利用单片机控制放大增益，使放大器的增益从２＾０，２＾２，２＾４－２＾１４共有８个可选值，使输入信号在８４ｄｂ的范围内，经最佳增益放大后，输出落入到事先设定的一个窗口范围之内，同时得到数字化的最佳增益碱。并利用单片机对零漂进行自动跟踪补偿校正。     

基于单片机MSP430F449的宽带直流放大器设计

利用单片机MSP430F449设计宽带直流放大器。采用单片机MSP430F449作为宽带直流放大器的控制芯片,利用三级放大器级联的形式实现对输入小信号的放大。其中MSP430F449单片机来控制双路数模转换器TLV5638实现AD603的程控增益调节和整体后级放大模块引入的直流的软件补偿,并利用OPA847作为固定增益放大器。通过实验数据证明整个系统输出稳定,性能良好。该系统具有可行性和实用性。     

增益可调射频宽带放大器设计

本放大器由两级构成,3个OPA2695级联组成的固定增益同相放大器构成前级放大器,对输入信号做放大处理;后级增益可调电路由乘法器AD835实现,通过调整单片机DA输出控制总增益,最终实现通频带为0.3MHz～100MHz、增益0dB～+60dB可调的射频宽带放大器.     

一种数控高增益测量放大器的设计

根据工程应用中对小信号放大的需要,结合模拟电子技术和单片机技术,设计实现了一种数控高增益测量放大器.根据预置的电压放大倍数合理分配第一级、第二级的放大量,实现了步进为1的1～1 000的放大倍数预置和显示功能,同时实现输出共模电压反馈至电源公共端,使运放电源电压随共模输入电压浮动等改进措施提高了放大器的共模抑制比,实现了一种方便实用的数控高增益测量放大器.     

一种新型超宽共模输入范围放大器设计

在分析传统CMOS宽共模输入级结构基础上,设计了一种新型CMOS电路结构实现超宽共模输入范围(ICMR)的运算放大器。此设计通过提取输入共模电平与参考共模电平比较放大,反馈到输入信号端,使信号在放大前共模电平趋近参考共模电平,可扩大输入共模电平范围,并有利于OP core性能保持稳定。电路采用TSMC 0.13μm CMOS工艺进行设计,利用Cadence仿真,结果表明:在3.3 V电源电压下,输入共模范围为-1.5 V～4.8 V,开环增益为74 dB,单位增益带宽为11.4MHz,相位裕度为74°。     

ERT中多通道程控增益放大电路设计

针对ERT（电阻层析成像）,并行数据采集中通道数多且采集到的微弱信号变化范围较大的特点,提出了一种新的多通道程控增益放大电路设计方案。方案中通过检测各通道中输入信号的大小,相应地调节各通道输入信号的放大倍数,使其满足模数转换器（ADC）的输入要求,从而进行A/D采样。介绍了基于AD603的程控增益放大电路设计方案,实现...     

基于PIC单片机的测频仪的设计与实现

设计了一种基于PIC单片机的测频仪。该系统利用CPLD实现对输入信号频率的等精度测量，利用数字量控制的梯形电阻网络实现系统增益从10～40dB可调、步进为6dB；采用PIC16F877单片机作为系统的控制器，并对增益和频率值进行数字显示。     

宽带放大器的设计与仿真

采用TI公司的高速运放OPA820ID作为一级放大电路,THS3091D作为末级放大电路,在输出负载50 Ω上实现电压增益≥40 dB,通频带宽为10 Hz～10 MHz,并利用MSP430单片机控制1602液晶显示输出电压峰峰值和有效值,以及模拟电子技术和单片机信号采集处理完成了增益控制和输出显示。整个系统结构合理、设计简洁、性能稳定,可应用于课程设计、实训等教学场合。     

2003全国大学生电子设计竞赛一等奖 宽带放大器(B题)

本设计由三个模块电路构成：前级放大电路(带AGC部分)、后级放大电路和单片机显示与控制模块。在前级放大电路中，用宽带运算放大器AD603两级级联放大输入信号，输出放大一定倍数的电压，经过后级放大电路达到大于8V的有效值输出。ADUC812的单片机显示、控制和数据处理模块除可以程控调节放大器的增益外，还可以实时显示输出电压有效值。     

宽带直流放大器

针对小信号的幅度小、干扰大,线性放大难和提取难度大等问题,设计一种宽带直流放大器.是以单片机AT89C55WD和FPGA为控制核心,由可变增益放大嚣AD603为核心的放大电路、前级信号调理电路、后级功率放大电路和滤波电路组成.该放大器具有高增益且增益连续可调、输出波形无明显失真、有效抑制零点漂移和噪声、可输出大功率等特性,且在0～10 MHz的频带内信号可放大0～75 dB,带宽设置为5 MHz或10 MHz两种,输出信号峰峰值高达20 V.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-