激光熔覆制备Ni/TiC原位自生复合涂层及其组织形成规律研究

利用预置涂层法对三种不同成分的合金粉(Ni60A+10,15.20wt%(Ti+C))在45号钢表面进行了一系列激光表面熔覆实验。实验结果表明:利用预置涂层激光表面熔覆技术,可以在碳钢表面直接原位合成TiC颗粒增强的Ni基合金复合涂层,TiC颗粒在激光重熔过程中由石墨和钛原位反应而成。涂层与基体呈良好的冶金结合,涂层宏观质量完好,无裂纹和气孔等缺陷。涂层组织呈典型的外延生长特征,由r—奥氏体、CrB、、M_(23)C_6和TiC等相组成。原位形成的TiC颗粒与基体界面洁净,无任何附着物存在、熔覆层内TiC颗粒呈梯度分布。熔覆层内增强颗粒的数量和尺寸随涂层中添加(TiC)量的增加而增加。涂层显微硬度呈梯度分布,最大可达HV_(0.2)850,约为基材显微硬度的3.5倍。     

激光熔覆原位合成TiC-Cr7C3-Ti-Ni金属复合材料涂层

利用激光熔覆工艺在Ti-6Al-4V合金表面制备出原位自生TiC-Cr7C3-Ti-Ni金属复合陶瓷涂层,以改善材料表面的综合性能。采用X射线衍射(XRD)、扫描电镜(SEM)、能量分散仪(EDS)、电子探针显微分析仪(EPMA)等手段对复合涂层微观组织结构进行研究。结果表明,复合涂层主要由-βTi,-γNi固溶体及分布于晶间的Ti/TiC或Ti/Cr7C3共晶组成;晶内为贫Ni,C的-βTi固溶体组织,晶间为富Ti,C的Ti/TiC和Ti/Cr7C3共晶组织;随着复合涂层成分的变化,激光熔覆原位合成物的量发生相应的变化,涂层熔区内晶体生长形态从网络状晶向树枝晶、等轴晶过渡;复合涂层显微硬度值较基体有显著提高。     

原位生成TaC颗粒增强镍基激光熔覆层

利用激光熔覆技术,在A3钢表面制备出了原位生成TaC颗粒强化的镍基复合涂层。使用金相显微镜、扫描电镜(SEM)、电子能谱(EDS)和X射线衍射(XRD)仪对熔覆层进行了显微组织和物相分析,并测试了熔覆层显微硬度及摩擦性能。结果表明,在适当的工艺条件下,激光熔覆制备原位生成TaC颗粒增强镍基复合涂层成形良好、表面光滑,涂层与基体呈现良好的冶金结合。熔覆层组织由原位生成的TaC颗粒相 Cr3C2与γ(Cr-Ni-Fe-C)的枝状共晶相 γ(Cr-Ni-Fe-C)基体组成。由于TaC颗粒强化相的形成及其均匀弥散分布,既提高了涂层中的强化相比例,又细化了组织,使得TaC/Ni60激光熔覆层具有高的硬度(平均硬度HV0.31100),与纯Ni60熔覆层相比,耐磨性提高4倍。     

激光熔覆TiC增强Ti基复合涂层的组织与性能

利用激光熔覆技术在工业纯钛表面分别预置TiC、(Ti C)、(Ti TiC)粉末制备了TiC增强Ti基复合涂层,对复合涂层的组织与性能进行了分析和测试.结果表明:制备的涂层均由TiC增强相和α'-Ti组成;激光熔覆纯TiC涂层出现了陶瓷的分层现象,对组织和性能不利;激光熔覆(Ti C)原位反应生成了TiC,但组织较粗大;熔覆(Ti TiC)组织均匀致密.三种熔覆层硬度大小关系为:加(Ti TiC)>加TiC>加(Ti C),最高硬度分别为Hv1246、Hv1213、Hv1135,加(Ti TiC)涂层硬度最高.导致该熔覆层硬度最高的主要原因是添加的Ti对熔覆有利,且生成了数量较多、较致密均匀的硬质TiC陶瓷相.     

激光熔覆原位合成TiC-TiB2增强钴基复合涂层的研究

为了提高零件表面强度和耐磨性,以TiO2,Al,B4C和KF-Co50合金粉末为原料,利用激光熔覆技术,采用预置粉末法,在Q235钢基体表面原位合成了TiC-TiB2增强Co基复合涂层。使用金相显微镜、扫描电镜和X射线衍射仪对熔覆层的组织和物相进行了分析,并对熔覆层的显微硬度及耐磨性能进行了测试。结果表明,熔覆层与基材呈现良好的冶金结合,组织致密,无裂纹、气孔等缺陷;熔覆层的主要组成相有γ-Co,TiC,TiB2,Cr23C6等;熔覆层平均显微硬度达770HV0.2,耐磨性能优异。这一结果对提高零件使用寿命具有积极意义。     

亚微米TiC/B_4C颗粒对激光熔覆Stellite涂层组织及性能影响

通过激光熔覆在304不锈钢表面制备了Stellite 12涂层,研究了添加不同质量分数的Ti/B_4C对Stellite 12涂层组织及性能的影响,分析了涂层组织的生长,测试了涂层的显微硬度及耐磨性能。研究结果表明,Stellite 12涂层主要由面心立方的γ-Co与Cr_7C_3相组成。随着Ti/B_4C的添加,涂层原位合成了TiC亚微米颗粒相。残存的B_4C作为异质形核点,形成了亚微米结构TiC/B_4C强化相,且颗粒尺寸逐渐减小。TiC/B_4C颗粒对涂层晶粒有细化作用。涂层显微硬度随着添加Ti/B_4C的质量分数的增加逐渐增大,最高为624 HV。涂层耐磨性能随添加的Ti/B_4C质量分数的增加逐渐增强。     

激光熔覆工艺参数对Ti/SiC复合涂层显微硬度和磨损性能的影响

为解决如轴承、齿轮、连杆等45钢构件,在高温高压环境下于交变载荷作用下失效的问题,将Ti和SiC粉末预设在45钢基体表面后进行激光熔覆制备Ti+SiC复合涂层,通过改变在激光熔覆过程中的激光功率、扫描速度等工艺参数,研究了工艺参数对复合涂层微观组织演变、微观结构和表面性能影响的一般规律。结果表明：涂层由Ti₅Si₃、TiC、TiSi、Fe₂C、Fe₂SiTi、Fe、Ti等相组成;原位形成的络合物TiC显著提高了基体表面的耐磨性能;与45钢基体相比,试样3复合涂层表面的耐磨性提高了36.64倍以上,显微硬度也有显著提高(约5.54倍)。由此可知,随着激光比能的增加(从4.5 kJ/cm~2增加到5.8 kJ/cm~2),TiC相更容易形成,钛基复合涂层的综合性能得到提高。但过高的激光比能会抑制TiC相的形成,从而降低耐磨性,因此激光比能应限制在一定范围内。     

WS2含量对钛合金激光熔覆自润滑耐磨复合涂层的影响

以NiCr/Cr3C2-10%WS2、NiCr/Cr3C2-20%WS2、NiCr/Cr3C2-30%WS2合金粉末为原料, 采用激光熔覆技术在Ti-6Al-4V合金表面制备了γ-NiCrAlTi/TiC+TiWC2/CrS+Ti2CS复合涂层。采用 X射线衍射仪(XRD)、扫描电子显微镜(SEM)、能谱仪(EDS)分析了涂层的物相和显微组织。结果表明: 激光熔覆的复合涂层与基体呈冶金结合, γ-NiCrAlTi/TiC+TiWC2/CrS+Ti2CS复合涂层主要由硬质TiC和TiWC2为耐磨增强相、γ-NiCrAlTi为增韧相、Ti2CS 和 CrS金属硫化物为自润滑相的自润滑耐磨复合涂层。随着固体润滑剂WS2添加含量的增加, γ-NiCrAlTi/TiC+TiWC2/Ti2CS+CrS涂层中的金属硫化物体积分数明显增加, 复合涂层的磨损率逐渐降低, 复合涂层自润滑耐磨性能明显增强。     

激光熔覆NbC/Ni60合金复合涂层的组织与性能

利用激光熔覆在45钢基体上制备了NbC颗粒增强的Ni60合金复合涂层。结果表明,复合涂层的组织由γ-Ni奥氏体枝晶、枝晶间的共晶、M₂₃C₆、NbC、和少量的CrB相等组成。NbC颗粒是在激光熔覆过程中原位合成的,其形貌为不规则的块状或花瓣状。原位合成NbC颗粒增强的Ni60合金激光熔覆涂层的显微硬度可达HV0.2 1 000左右,相比于纯Ni60合金涂层,复合涂层的显微硬度提高了约38%。并且,通过激光熔覆（Nb+C）/Ni60混合粉末成功修复了2Cr13材质汽蚀的汽轮机叶片。     

钛合金激光熔覆硬质颗粒增强金属间化合物复合涂层耐磨性

以54.51Ti-37.68Ni-7.81B4C(元素前数字为质量分数值)粉末混合物为原料,利用激光熔覆技术在TA15钛合金基材表面制得了以外加未熔B4C颗粒及快速凝固"原位"生成硼化钛和碳化钛为增强相,以金属间化合物TiNi、Ti2Ni为基体的复合涂层。采用光学显微镜(OM)、X射线衍射(XRD)、扫描电子显微镜(SEM)、能谱仪(EDS)等手段分析了涂层显微组织,并测试了涂层的二体磨粒磨损性能。结果表明,激光熔覆硬质颗粒增强金属间化合物复合涂层硬度高、组织均匀并表现出优异的抗磨粒磨损性能。高硬度、高耐磨的B4C、硼化钛和碳化钛陶瓷增强相与高韧性TiNi/Ti2Ni金属间化合物基体的强韧结合是激光熔覆涂层优异耐磨性的主要原因,其磨损机理为轻微的显微切削和塑性变形。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-