使用EASE软件中一些误区的讨论(续完)

4 采用软件自带的吸声材料数据库即可胜任厅堂声环境设置在安装英文版EASE软件数据库时其自带的吸声材料数据库包括美国吸声材料数据库( American Base)和德国吸声材料数据库(Germany Base)两个安装选项.国内用户通常选择安装前者数据库.那么在中国厅堂音质设计中仅仅采用美国吸声材料库能否胜任呢?     

使用EASE软件中一些误区的讨论(待续)

在厅堂扩声系统工程设计中,大多采用声学模拟软件EASE进行室内声环境设置和扬声器布置,进而对工程完成后的室内一些声学参量做出预测,用于厅堂扩声系统工程投标中。然而这里最重要的一点就是要正确使用EASE软件。有鉴于此,就需要对使用EASE软件中存在的一些误区进行深入讨论。这些误区涉及正版EASE软件的版本配置,涉及适用房间的大小,涉及到吸声材料数据库和扬声器数据库等诸多方面。只有走出这些误区才能正确把握EASE的使用,使该软件更好地服务于厅堂声学设计。     

EASE（CHINA）声学设计与咨询有限公司在中国香港成立

EASE（CHINA）声学设计与咨询有限公司在中国香港成立,该公司主要从事德国EASE声学设计软件的销售、应用培训,承接声学设计工程以及音箱产品列入EASE数据库的咨询业务。     

基于仿真的教室声学特性预测

应用声学仿真软件对矩形教室的声学特性进行模拟,探讨相同吸声面积不同吸声材料布置在教室的侧墙、后墙、天花等不同位置时的声学特性,为教室声学设计提供指导。     

EASE建模中吸声材料设置的讨论

对吸声面材料设置原则进行讨论,以期正确使用EASE3.0这一计算机辅助设计软件,进行与建模实际设置材料相对应的声学特性模拟。指出了EASE3.0建模各吸声面材料设置中存在的一些误区。     

EASE3.0软件应用的可信度研究(二)

4室内材料吸声系数的赋值问题 建筑声学设计计算中，没有限定材料声学特性的取值方式。可以是吸声系数或吸声量。一般厅堂、剧场的观众席吸声性能的计算多数采用每座吸声量。但EASE软件不能直接统计厅堂中各部位的吸声量，只能识别吸声系数。实验测试的2个厅堂均为软座椅，其中沙坪剧院的座椅是专业厂家生产，其吸声性能有明确的数据。学院多功能厅的座椅无现成的数据，     

听音室设计浅说

介绍了小型听音室的设计方法,主要从听音室体型设计、混响时间的计算、声学材料的布置、扩散体设计、噪声控制等方面进行阐述。并举例说明小型听音室混响时间的计算方法与吸声材料和吸声结构的选用方法,指出吸声材料和吸声结构在室内应分散合理布置,室内混响时间才能达到设计要求,并强调声学施工工艺的重要性。     

计算机声学设计软件——EASE

自1990年第88次AES大会初次被介绍给专业电声及音响界以来，EASE软件已经发展成为当今最知名的专业声学设计软件之一，被声学工程师广泛应用于声学设计中。EASE软件的发展历程经过了：1994年DOS版的EASE2．1：1999年WINDOW版的EASE3．0并入了试听模块（EARS）；     

吸声帘幕的吸声分析

吸声帘幕属于多孔有机纤维吸声材料.吸声帘幕具有防火性、可变吸声性、易安装、装饰性等基本特点.在很多实际工程中,都应用了吸声帘幕.通过实验对吸声帘幕的声学特性进行了研究.     

EASE软件声学参量模拟可信度的探讨

长久以来,人们对声学模拟软件EASE（无论版本高低）预测的一些室内声学参量数据结果都深信不疑,并以此为依据．致使在某些厅堂扩声系统工程招标中,将其作为工程设计标书中一个不可或缺的设计要求。笔者多年来对EASE软件不同版本及不同运算模块研究结果表明,上述观点在认识上存在很大的局限性。为了更深入认识和理解该软件．本文以EASE不同运算模块对同一厅堂声学参量运算结果进行对比、分析和讨论,得出EASE软件中只有AURA运算模块才能真正适用于厅堂扩声系统非扩散声场环境下的声学模拟。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-