MIMO-OFDM中最优导频序列信道估计算法

提出了最优导频序列对于信道估计在多输入多输出(MIMO-OFDM)系统中的应用,这种设计使得信道估计解决方案复杂度很低,以及灵活的天线结构,可以获得最佳的均方误差(MSE)而且在空间域和信道估计的性能最优,峰值平均功率比OFDM符合的性能,仿真结果证明了该最优导频设计方案的有效性。     

MIMO-OFDM系统信道估计中的最优导频设计

推导了MIMO-OFDM系统最优频域导频序列设计准则,推广传统两天线正交导频设计法到了任意天线时的设计,提出了一种导频信号峰均比为1,能达到正交导频时信道估计均方误差MSE下界的频域导频序列设计方法。并用仿真评估分析所提方法与传统设计方法在不同序列长度和天线数目情况下的性能差异,仿真结果表明采用这里所采用的正交导频序列设计方法可以减少序列的长度,提高系统的性能。     

频偏情况下MIMO—OFDM系统的导频设计

描述了存在频率偏移情况下,MIMO-OFDM系统模型及最小二乘(LS)信道估计算法,为了达到LS算法的最小均方误差(MSE)下界得出了最优导频设计方法,最终的结论是,当导频功率相等、均匀分布,且导频的相移也一致时,LS估计的MSE达到最优性能.     

一种基于均匀分布型的MIMO OFDM系统最优导频设计

本文提出了一种针对存在虚子载波的MIMO OFDM系统下基于均匀分布型的最优导频设计,该设计通过采用时域最小二乘信道估计(TD-LS-CE),且以数据子载波的频域信道响应的均方误差为准则,在最大化带宽效率的前提下,对各发送天线上均匀分布型的导频子载波进行功率最优化分配,并推导了其闭式解。最后,仿真结果表明该最优导频序列在MSE、BER性能方面均优于传统的移相正交导频序列和等功率分配的交错正交导频序列。     

MIMO-OFDM系统中导频最优设计准则及性能分析

信道的准确估计是提高MIMO-OFDM系统性能的关键,利用输入序列矩阵特征值,提出了MIMO-OFDM系统中基于最大似然估计的最优导频设计准则,给出了接收端信噪比损失的闭解.此准则可用于指导不同信道条件下的导频设计.     

降低MIMO-OFDM系统峰均比的QAP算法研究

多输入多输出-正交频分复用(MIMO-OFDM)是第四代移动通信系统的关键技术,该技术由于采用多载波调制,存在较高的峰均功率比(PAPR),为了降低MIMO-OFDM系统中较高的PAPR,在近似梯度投影(AGP)和部分传输序列(PTS)的基础上提出QAP算法。该算法首先将MIMO-OFDM信号经过AGP算法,然后用PTS算法进一步降低该系统的PAPR。仿真分析表明,所提出的QAP方案与其他传统方案相比,系统PAPR性能得到明显改善,且不破坏系统的误码率(BER)性能;同时QAP算法的PAPR值受子载波数目影响,PAPR值随着子载波数目(N=32,64,128,256,512)的增加而增加;QAP算法在随机分组方式下PAPR性能最佳。     

MIMO-OFDM中一种新的信道估计算法

根据不同发射天线发射的导频移位后应相互正交的原则,运用最小二乘推导出了基于MIMO-OFDM信道估计模型的时域信道估计解。针对该时域信道估计解需要矩阵求逆,运算量大的缺点,研究了基于空时频三维导频符号的设计方法,该方法使得时域信道估计解不需要矩阵求逆,可大大降低信道估计的复杂度,并且可以使信道估计误差最小。仿真结果表明,提出的基于空时频导频的信道估计方法相比传统LS算法和文献算法,MSE和BER性能均有较大的提高。     

一种改进的MIMO OFDM系统导频设计方案

对于采用虚拟子载波的多输入多输出(MIMO)正交频分复用(OFDM)系统,传统最优的均匀分布导频序列在某些情况下是不可用的。为了获得此时的最优导频序列,该文基于最小化最小二乘(LS)信道估计均方误差(MSE)的准则提出了一种改进的导频设计方案。该方案能够快速有效地找到最优导频序列,或在最优导频序列不存在的情况下给出次优的导频序列。仿真结果显示了所提方法的有效性。     

基于STBC-SCFDE系统的信道估计算法研究

针对频率选择性衰落信道下2发射天线的空时分组编码-单载波频域均衡(STBC-SCFDE)系统,分别设计了2种新颖的时域多天线导频序列和频域多天线导频序列,相应地提出了一种时域导频信道估计算法和一种频域导频信道估计算法,并分别进行了信道估计的MSE性能分析以及计算复杂度对比.仿真验证表明,相比传统经典多天线信道估计算法,所提2种信道算法在中低信噪比下均能实现良好的信道估计性能,为未来无线通信系统的信道估计开辟了新的解决途径.     

基于IEEE802．16a MIMO-OFDM系统的信道估计方法研究

多天线运用到802．16a系统中可以提高系统的性能。首先给出MIMO-OFDM(Multi-input and Multi-output-Orthogonal Frequency Division Multiplexing)系统的基本构成，然后对协议中的空时编码方案进行改进，提出将协议中所提出的单接收机两天线发送分集的情况扩展到多发多收的情况，最后介绍了适合MIMO—OFDM系统LS信道估计的帧头结构和导频结构，在一个OFDM符号时间内即可估计出MIMO各个子信道参数；对SUI-3信道下的误比特率(BER)及均方误差(MSE)性能分别进行了仿真，比较分析了结果，并得出结论。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its