2μm附近二极管激光吸收光谱CO2浓度测量研究

采用波长2μm附近的可调谐半导体激光二极管作为光源,结合多步吸收光程和光纤传输技术,通过激光吸收光谱直接测量方法对CO2分子浓度进行测量研究。实验在标定了激光器调谐范围内17条CO2吸收谱线的波长及相应的吸收带跃迁的基础上,研究了不同压力下纯CO2气体在2008nm附近的吸收光谱,由吸收信号随气体压力的变化关系得到低气压下实验装置的系统刻度因子。并进一步对样品气体的CO2浓度进行测量,测量给出CO2分子浓度为(2.754±0.145)×1016 cm-3,测量误差主要来源于目前实验中所使用的气压计的精度和读数局限性。该研究为气体分子浓度测量、同位素含量分析提供了一种光谱测量方法。     

全光纤转动拉曼激光雷达的光纤光栅分光技术研究?

设计了一款由可见光波段的光纤布喇格光栅和光纤耦合器构建的全光纤转动拉曼激光雷达分光系统。利用相位掩模板侧向成功刻写530 nm波段光纤布喇格光栅,并初步测试其透射谱和反射谱性能。为提高光纤光栅中心波长与大气氮气分子转动拉曼谱线的匹配特性,利用悬臂梁设计高调谐灵敏度的调谐系统。实验结果表明,成功研制的可见光波段光纤布喇格光栅其反射率约为95%,带宽约为0.3 nm,应力调谐系统可实现± 0.6 nm范围18 pm/r 的波长调谐。     

基于最小二乘法的电力电缆FBG传感测温系统

为了提高电力电缆测温系统的测量精度和速度,提出了以光纤梳状滤波器代替参考光栅提供拟合数据参考点,采用最小二乘法拟合光纤Bragg光栅波长和F-P可调谐滤波器调谐电压的线性关系,通过F-P可调谐滤波器解调FBG传感器中心波长变化的方法,完成对电力电缆温度的测量.研究表明,光纤梳状滤波器能够代替多个恒温参考光栅实现波长标定,对反射波长的测量误差＜5pm,温度均方误差≤0.7 ℃.     

高斯拟合提高光纤布喇格光栅波长检测精度

由于各种光噪声的影响,基于可调谐法布里-珀罗(F-P)滤波器的光栅解调仪解调精度不够高,光路噪声通常会带来10pm量级的波长测量误差.为了提高布喇格波长检测精度,采用了在解调过程中对光纤光栅反射谱进行高斯拟合,从而消减噪声影响的方法.实验发现,拟合后中心波长的测量误差小于2.5pm,温度测量值与实际温度之间的标准方差为0.3°C.结果表明,在有害噪声信号不是非常大的情况下,该方法能有效提高波长检测精度.     

可调谐TEA CO2激光器技术

近年发展起来的激光差分吸收雷达用于遥测大气污染状况,可获得大气污染物浓度的时空分布,这对了解大气污染的分布实况、寻找主要大气污染来源、防治大气污染等均有很重要的价值.TEACO2激光器工作在9～μM的红外波段,大部分大气污染物和化学物质的特征吸收谱都在此波段内.高重复率可调谐的.TEACO2激光器的研制已成为C02激光差分吸收雷达的关键技术.差分吸收雷达从探测方式上可分为相干探测和直接探测方式,其中直接探测方式又可分为后向地物反射方式和距离分辨方式.早期,由于单台激光器快调谐问题尚未解决,一般都采用多台波长固定的CO2激光器组合使用.随着快速调谐技术的发展,差分吸收雷达系统开始采用单台CO2激光发射器.这就使差分吸收雷达系统更加趋于小型化和实用化.利用符合TEA CO2激光器内多种激光混合气体组分的五温度、六温度模型速率方程理论,详细分析了TEACO2激光器的动力学过程,确定激光谐振腔初始条件后,计算了激光器的各种输出特性.激光器输出脉冲参数如峰值功率、粒子数反转、光强、激光能量等均为时间的函数,并且随着输入参数(气压、温度、耦合输出镜反射率等)的不同而作相应的变化.根据理论计算结果,设计研制了两台高重频快调谐TEA CO2激光器,分别采用高频步进电机驱动光栅和扫描振镜+光栅的技术方案实现了激光的快调谐输出.设计了小型化高重复率可调谐的TEA CO2激光器,激光谐振腔长55 cm,采用高频步进电机驱动光栅法,预电离方式为表面电晕紫外预电离,实验得到激光器的一级调谐输出谱线50余条,激光脉冲输出能量30～100 J,峰值功率0.3～1w,谱线分布于9R、9P、10R、10P四个谱区.单片机控制在单台CO2激光器上实现快速调谐输出波长不同的激光脉冲,不同谱线的输出时间间隔约10ms.采用扫描振镜+光栅的调谐技术,又研制了一种双通道放电激励折叠腔.TEA CO2激光器.详细分析了折叠腔TEACO2激光器的结构及其设计特点,谐振腔长约120 cm,影响气体快放电过程的各种因素,如储能电容与峰值电容的比值、工作气压、充放电电感及输入电压的范围等进行了实验研究,确定了充放电谐振回路的最佳参数,实现了双通道的稳定辉光放电.对激光器输出能量与激励电压、混合气体工作气压等参数的关系进行了实验研究,得到激光器自由振荡最大输出能量约为722 mJ.工控机程序控制扫描振镜+光栅的偏转角度,实现了激光的可调谐输出.激光器脉冲重复频率可达到100 Hz,实验得到一级调谐输出谱线80条.强支谱线如10P(20)、9P(18)支输出能量约400 mJ,弱支谱线如10P(48)、9P(42)支谱线能量约100 mJ.经测量,弱支谱线的远场发散角水平方向和垂直方向均为1.21 mrad,约为2倍衍射极限.实现了任意波长两条谱线在10 ms时间内快速切换输出.     

由高双折射光纤环镜构成的可变波长输出的L-波段掺铒光纤激光器

报道了一种结构简单的可变波长输出的L 波段线型腔掺铒光纤激光器。其中的波长选择器件为一包括两段高双折射光纤在内的光纤环镜 ,通过调整环镜内偏振控制器的状态可以改变环镜对不同波长的反射率以获得可变波长输出的效果。线型腔内用 980nm激光抽运铒光纤产生的ASE作二次抽运源 ,使腔内铒光纤的增益谱由C 波段位移到L 波段。实验中观察到波长在 1 5 83～ 1 6 0 0nm范围内可变的稳定激光输出 ,波长调谐范围为 1 7nm     

程差法测量1．315μm附近CO2的吸收

CO2在碘激光波长(1.315 μm)的吸收截面比水汽小得多.我们利用可调谐激光长程吸收光谱测量实验系统,测量了1.315 μm附近CO2的高分辨率吸收光谱,采用测量不同光程的相对透过率方法(程差法)计算出碘激光波长CO2的微弱吸收.结果表明,在1.315 μm波段存在CO2的吸收谱线和连续吸收.在氧碘激光频率(7603.1385 μm-1)CO2的吸收截面(1×10-24 cm2量级) 比按HITRAN 96谱线参数计算的线翼吸收大;与Bragg用光声方法测量的结果相当.本报告将介绍测量实验方法和计算分析结果.(PG8)     

TEA13C16O2激光器的实验研究

为扩展可调谐TEA CO2激光器的输出波长范围，增加差分吸收雷达可探测的物质种类，采用^13C^16O2代替激光器工作气体中的CO2成分。计算了TEA^13C^16O2激光器在Ⅰ波段两个分支上的小信号增益系数分布。利用平面光栅单色仪，在小型快调谐TEA^13C^16O2激光器的Ⅰ波段共测到了32条谱线的能量输出，输出范围为10.663～11.347μm。与采用普通CO2作为工作气体的情况相比，激光器谱线输出范围在长波长方向上有很大扩展，输出的最长波长由CO2的10.74μm增大到11．347μm。测得TEA^13C^16O2激光器的最高输出能量为107mJ，并给出了Ⅰ波段典型谱线脉冲的半峰全宽。     

用超荧光光源实现HCN分子2v3带红外振转谱测量

采用超荧光光源(SFS)搭建了一个新型的气体吸收谱线测量装置,成功实现了对13.332 kPa气压下H13C14N(HCN)气体分子2v3振动带精细结构的准确测量.分析了双程后向(DPB)结构的SFS和HCN分子的结构及振动转动模式,所采用的SFS在2 mW输出功率下,激发了2V3振动带J=0～27的转动能级,输出谱在波长1525.3～1560.3 nm之间平坦度小于1 dBm,可以直接覆盖测量50多条振转谱线,无需多次扫描和数据拟合.利用了SFS高亮度和宽谱的特性,与常用的窄线宽可调谐激光器扫描法和经典吸收法比较,结构简单,成本低,可以很方便地实现实验室条件下气体分子精细结构的研究.     

基于Hi-Bi FLM的离散式L带可调谐掺铒光纤激光器

研究了利用高双折射光纤环形镜（HiBiFLM）结合L带可调谐的波长选择薄膜滤波器,以掺Er^3＋光纤为增益介质,以0．8nm波长间隔计,可获得L波段41个离散可调谐波长的可调谐输出,各信道波长输出功率变化的最大幅度小于3．1dB,光信噪比（OSNR）优于32dB。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-